Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations

A Arvanitopoulos, M Antoniou, Fan Li, M R Jennings, S Perkins, K N Gyftakis, N Lophitis

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

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Abstract

The cubic polytype (3C-) of Silicon Carbide (SiC) is an emerging semiconductor technology for power devices. The featured isotropic material properties along with the Wide Band Gap (WBG) characteristics make it an excellent choice for power Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Nonetheless, material related limitations originate from the advantageous fact that 3C-SiC can be grown on Silicon (Si) wafers. One of these major limitations is an almost negligible activation of the p-type dopants after ion implantation because the annealing has to take place at relatively low temperatures. In this paper, a novel process flow for a vertical 3C-SiC-on-Si MOSFET is presented
to overcome the difficulties that currently exist in obtaining a p-body region through implantation. The proposed design has been accurately simulated with Technology Computer Aided Design (TCAD) process and device software and a comparison is performed with the conventional SiC MOSFET design. The
simulated output characteristics demonstrated a reduced onresistance and at the same time it is shown that the blocking capability can be maintained to the same level. The promising performance of the novel design discussed in this paper is
potentially the solution needed and a huge step towards the realisation of 3C-SiC-on-Si MOSFETs with commercially grated characteristics.
Original languageEnglish
Title of host publicationProceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2019
PublisherIEEE
Pages364 - 370
Number of pages7
ISBN (Electronic)978-1-7281-1832-1
DOIs
Publication statusPublished - 14 Oct 2019
EventIEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives: SDEMPED - http://www.sdemped2019.com/en/index.html, Toulouse, France
Duration: 27 Aug 201930 Aug 2019
http://www.sdemped2019.com/

Conference

ConferenceIEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives
Abbreviated titleSDEMPED
CountryFrance
CityToulouse
Period27/08/1930/08/19
Internet address

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Bibliographical note

© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Keywords

  • 3C-SiC-on-Si
  • MOSFETs
  • SRIM
  • Silicon Carbide
  • TCAD
  • Wide Band Gap

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Arvanitopoulos, A., Antoniou, M., Li, F., Jennings, M. R., Perkins, S., Gyftakis, K. N., & Lophitis, N. (2019). Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations. In Proceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2019 (pp. 364 - 370). [8864910] IEEE. https://doi.org/10.1109/DEMPED.2019.8864910