Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations

A Arvanitopoulos; M Antoniou; Fan Li; M R Jennings; S Perkins; K N Gyftakis; N Lophitis

doi:10.1109/DEMPED.2019.8864910

Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations

A Arvanitopoulos, M Antoniou, Fan Li, M R Jennings, S Perkins, K N Gyftakis, N Lophitis

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

2 Citations (Scopus)

194 Downloads (Pure)

Abstract

The cubic polytype (3C-) of Silicon Carbide (SiC) is an emerging semiconductor technology for power devices. The featured isotropic material properties along with the Wide Band Gap (WBG) characteristics make it an excellent choice for power Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Nonetheless, material related limitations originate from the advantageous fact that 3C-SiC can be grown on Silicon (Si) wafers. One of these major limitations is an almost negligible activation of the p-type dopants after ion implantation because the annealing has to take place at relatively low temperatures. In this paper, a novel process flow for a vertical 3C-SiC-on-Si MOSFET is presented
to overcome the difficulties that currently exist in obtaining a p-body region through implantation. The proposed design has been accurately simulated with Technology Computer Aided Design (TCAD) process and device software and a comparison is performed with the conventional SiC MOSFET design. The
simulated output characteristics demonstrated a reduced onresistance and at the same time it is shown that the blocking capability can be maintained to the same level. The promising performance of the novel design discussed in this paper is
potentially the solution needed and a huge step towards the realisation of 3C-SiC-on-Si MOSFETs with commercially grated characteristics.

Original language	English
Title of host publication	Proceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2019
Publisher	IEEE
Pages	364 - 370
Number of pages	7
ISBN (Electronic)	978-1-7281-1832-1
DOIs	https://doi.org/10.1109/DEMPED.2019.8864910
Publication status	Published - 14 Oct 2019
Event	IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives: SDEMPED - http://www.sdemped2019.com/en/index.html, Toulouse, France Duration: 27 Aug 2019 → 30 Aug 2019 http://www.sdemped2019.com/

Conference

Conference	IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives
Abbreviated title	SDEMPED
Country/Territory	France
City	Toulouse
Period	27/08/19 → 30/08/19
Internet address	http://www.sdemped2019.com/

Bibliographical note

© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Keywords

3C-SiC-on-Si
MOSFETs
SRIM
Silicon Carbide
TCAD
Wide Band Gap

ASJC Scopus subject areas

Energy Engineering and Power Technology
Electrical and Electronic Engineering
Mechanical Engineering
Safety, Risk, Reliability and Quality

Access to Document

10.1109/DEMPED.2019.8864910

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Cite this

Arvanitopoulos, A., Antoniou, M., Li, F., Jennings, M. R., Perkins, S., Gyftakis, K. N., & Lophitis, N. (2019). Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations. In Proceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2019 (pp. 364 - 370). Article 8864910 IEEE. https://doi.org/10.1109/DEMPED.2019.8864910

Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations. / Arvanitopoulos, A; Antoniou, M; Li, Fan et al.
Proceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2019. IEEE, 2019. p. 364 - 370 8864910.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

Arvanitopoulos, A, Antoniou, M, Li, F, Jennings, MR, Perkins, S, Gyftakis, KN & Lophitis, N 2019, Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations. in Proceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2019., 8864910, IEEE, pp. 364 - 370, IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, Toulouse, France, 27/08/19. https://doi.org/10.1109/DEMPED.2019.8864910

Arvanitopoulos A, Antoniou M, Li F, Jennings MR, Perkins S, Gyftakis KN et al. Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations. In Proceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2019. IEEE. 2019. p. 364 - 370. 8864910 doi: 10.1109/DEMPED.2019.8864910

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Viable 3C-SiC-on-Si MOSFET design disrupting current Material Technology Limitations

Abstract

Conference

Bibliographical note

Keywords

ASJC Scopus subject areas

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