Validated physical models and parameters of bulk 3C-SiC aiming for credible Technology Computer Aided Design (TCAD) simulation

Anastasios Arvanitopoulos, Neophytos Lophitis, Konstantinos N. Gyftakis, Samuel Perkins, Marina Antoniou

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    18 Citations (Scopus)
    65 Downloads (Pure)


    The cubic form of SiC (β- or 3C-) compared to the hexagonal α-SiC polytypes, primarily 4H- and 6H–SiC, has lower growth cost and can be grown heteroepitaxially in large area silicon (Si) wafers which makes it of special interest. This in conjunction with the recently reported growth of improved quality 3C–SiC, make the development of devices an imminent objective. However, the readiness of models that accurately predict the material characteristics, properties and performance is an imperative requirement for attaining the design and optimization of functional devices. The purpose of this study is to provide and validate a comprehensive set of models alongside with their parameters for bulk 3C–SiC. The validation process revealed that the proposed models are in a very good agreement to experimental data and confidence ranges were identified. This is the first piece of work achieving that for 3C–SiC. Considerably, it constitutes the necessary step for finite element method simulations and technology computer aided design.
    Original languageEnglish
    Article number104009
    JournalSemiconductor Science and Technology
    Issue number10
    Publication statusPublished - 19 Sept 2017

    Bibliographical note

    This is an author-created, un-copyedited version of an article accepted for publication/published in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at


    • silicon carbide
    • technology computer aided design (TCAD)
    • wide bandgap


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