Validated physical models and parameters of bulk 3C-SiC aiming for credible Technology Computer Aided Design (TCAD) simulation

Anastasios Arvanitopoulos, Neophytos Lophitis, Konstantinos N. Gyftakis, Samuel Perkins, Marina Antoniou

Research output: Contribution to journalArticle

LanguageEnglish
Article number104009
JournalSemiconductor Science and Technology
Volume32
Issue number10
DOIs
StatePublished - 19 Sep 2017

Bibliographical note

This is an author-created, un-copyedited version of an article accepted for publication/published in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/1361-6641/aa856b

Keywords

  • silicon carbide
  • technology computer aided design (TCAD)
  • wide bandgap

Cite this

Validated physical models and parameters of bulk 3C-SiC aiming for credible Technology Computer Aided Design (TCAD) simulation. / Arvanitopoulos, Anastasios; Lophitis, Neophytos; Gyftakis, Konstantinos N.; Perkins, Samuel; Antoniou, Marina.

In: Semiconductor Science and Technology, Vol. 32, No. 10, 104009, 19.09.2017.

Research output: Contribution to journalArticle

@article{dea2db32957945ca849a7eb8430e23bb,
title = "Validated physical models and parameters of bulk 3C-SiC aiming for credible Technology Computer Aided Design (TCAD) simulation",
keywords = "silicon carbide, technology computer aided design (TCAD), wide bandgap",
author = "Anastasios Arvanitopoulos and Neophytos Lophitis and Gyftakis, {Konstantinos N.} and Samuel Perkins and Marina Antoniou",
note = "This is an author-created, un-copyedited version of an article accepted for publication/published in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/1361-6641/aa856b",
year = "2017",
month = "9",
day = "19",
doi = "10.1088/1361-6641/aa856b",
language = "English",
volume = "32",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing",
number = "10",

}

TY - JOUR

T1 - Validated physical models and parameters of bulk 3C-SiC aiming for credible Technology Computer Aided Design (TCAD) simulation

AU - Arvanitopoulos,Anastasios

AU - Lophitis,Neophytos

AU - Gyftakis,Konstantinos N.

AU - Perkins,Samuel

AU - Antoniou,Marina

N1 - This is an author-created, un-copyedited version of an article accepted for publication/published in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/1361-6641/aa856b

PY - 2017/9/19

Y1 - 2017/9/19

KW - silicon carbide

KW - technology computer aided design (TCAD)

KW - wide bandgap

UR - http://www.scopus.com/inward/record.url?scp=85030087852&partnerID=8YFLogxK

U2 - 10.1088/1361-6641/aa856b

DO - 10.1088/1361-6641/aa856b

M3 - Article

VL - 32

JO - Semiconductor Science and Technology

T2 - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 10

M1 - 104009

ER -