Vacancy-oxygen defects in silicon: the impact of isovalent doping

C.A. Londos; E.N. Sgourou; D. Hall; A. Chroneos

doi:10.1007/s10854-014-1947-6

Vacancy-oxygen defects in silicon: the impact of isovalent doping

C.A. Londos, E.N. Sgourou, D. Hall, A. Chroneos

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Abstract

Silicon is the mainstream material for many nanoelectronic and photovoltaic applications. The understanding of oxygen related defects at a fundamental level is essential to further improve devices, as vacancy-oxygen defects can have a negative impact on the properties of silicon. In the present review we mainly focus on the influence of isovalent doping on the properties of A-centers in silicon. Wherever possible, we make comparisons with related materials such as silicon germanium alloys and germanium. Recent advanced density functional theory studies that provide further insights on the charge state of the A-centers and the impact of isovalent doping are also discussed in detail

Original language	English
Pages (from-to)	2395-2410
Journal	Journal of Materials Science: Materials in Electronics
Volume	25
Issue number	6
Early online date	26 Apr 2014
DOIs	https://doi.org/10.1007/s10854-014-1947-6
Publication status	Published - Jun 2014
Externally published	Yes

Bibliographical note

The final publication is available at Springer via http://dx.doi.org/10.1007/s10854-014-1947-6

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title = "Vacancy-oxygen defects in silicon: the impact of isovalent doping",

abstract = "Silicon is the mainstream material for many nanoelectronic and photovoltaic applications. The understanding of oxygen related defects at a fundamental level is essential to further improve devices, as vacancy-oxygen defects can have a negative impact on the properties of silicon. In the present review we mainly focus on the influence of isovalent doping on the properties of A-centers in silicon. Wherever possible, we make comparisons with related materials such as silicon germanium alloys and germanium. Recent advanced density functional theory studies that provide further insights on the charge state of the A-centers and the impact of isovalent doping are also discussed in detail ",

author = "C.A. Londos and E.N. Sgourou and D. Hall and A. Chroneos",

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T1 - Vacancy-oxygen defects in silicon: the impact of isovalent doping

AU - Londos, C.A.

AU - Sgourou, E.N.

AU - Hall, D.

AU - Chroneos, A.

N1 - The final publication is available at Springer via http://dx.doi.org/10.1007/s10854-014-1947-6

PY - 2014/6

Y1 - 2014/6

N2 - Silicon is the mainstream material for many nanoelectronic and photovoltaic applications. The understanding of oxygen related defects at a fundamental level is essential to further improve devices, as vacancy-oxygen defects can have a negative impact on the properties of silicon. In the present review we mainly focus on the influence of isovalent doping on the properties of A-centers in silicon. Wherever possible, we make comparisons with related materials such as silicon germanium alloys and germanium. Recent advanced density functional theory studies that provide further insights on the charge state of the A-centers and the impact of isovalent doping are also discussed in detail

AB - Silicon is the mainstream material for many nanoelectronic and photovoltaic applications. The understanding of oxygen related defects at a fundamental level is essential to further improve devices, as vacancy-oxygen defects can have a negative impact on the properties of silicon. In the present review we mainly focus on the influence of isovalent doping on the properties of A-centers in silicon. Wherever possible, we make comparisons with related materials such as silicon germanium alloys and germanium. Recent advanced density functional theory studies that provide further insights on the charge state of the A-centers and the impact of isovalent doping are also discussed in detail

U2 - 10.1007/s10854-014-1947-6

DO - 10.1007/s10854-014-1947-6

M3 - Article

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SN - 1573-482X

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EP - 2410

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 6

ER -

Vacancy-oxygen defects in silicon: the impact of isovalent doping

Abstract

Bibliographical note

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