Using multi time-scale electro-Thermal simulation approach to evaluate SiC-MOSFET power converter in virtual prototyping design tool

Ke Li, Paul Evans, Mark Johnson

Research output: Chapter in Book/Report/Conference proceedingConference proceedingpeer-review

14 Citations (Scopus)

Abstract

Using virtual prototyping (VP) design tool to evaluate power converter electro-Thermal performance can help designers to validate prototype in a quick way. However, different system time-scale requires efficient electro-Thermal simulation techniques. Thus, an approach by using average power losses of one switching cycle is presented in the paper to decouple electrical and thermal simulation so as to evaluate the influence of the parasitic inductance on device junction temperature quickly. This approach is validated by comparing with a method to obtain device junction temperature by using instantaneous power losses. By implementing it in the VP design tool, where a SiC-MOSFET behavioural model is developed and validated, it is shown the parasitic inductance influence on power converter electro-Thermal waveforms. Thus, designers can evaluate power converter electro-Thermal performance more quickly than other commercial software.

Original languageEnglish
Title of host publication2017 IEEE 18th Workshop on Control and Modeling for Power Electronics, COMPEL 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages8
ISBN (Electronic)9781509053261
DOIs
Publication statusPublished - 18 Aug 2017
Externally publishedYes
Event18th IEEE Workshop on Control and Modeling for Power Electronics, COMPEL 2017 - Stanford, United States
Duration: 9 Jul 201712 Jul 2017

Publication series

Name2017 IEEE 18th Workshop on Control and Modeling for Power Electronics, COMPEL 2017

Workshop

Workshop18th IEEE Workshop on Control and Modeling for Power Electronics, COMPEL 2017
Country/TerritoryUnited States
CityStanford
Period9/07/1712/07/17

Keywords

  • Electro-Thermal simulation
  • Multi time-scale
  • Parasitic inductance
  • SiC-MOSFET
  • Switching losses
  • Virtual prototyping

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Control and Optimization
  • Modelling and Simulation

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