Unified approach in electro-thermal modelling of IGBTs and power PiN diodes

Nebojsa Jankovic, Takashi Ueta, Kimimori Hatnada, Toshifumi Nishijima, Petar Igic

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

6 Citations (Scopus)

Abstract

The unified electro-thermal modelling of the IGBT and power PiN diode based on modified minority carrier drift-diffusion (DD) theory is described in this paper. PiN and IGBT models are embedded in PSPICE commercial simulation software and successfully tested against commercially available power devices.

Original languageEnglish
Title of host publicationProceedings of 19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07
PublisherIEEE
Pages165-168
Number of pages4
ISBN (Print)9781424410958
DOIs
Publication statusPublished - 27 Aug 2007
Externally publishedYes
Event19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07 - Jeju Island, Korea, Republic of
Duration: 27 May 200731 May 2007

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)1063-6854

Conference

Conference19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07
CountryKorea, Republic of
CityJeju Island
Period27/05/0731/05/07

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Jankovic, N., Ueta, T., Hatnada, K., Nishijima, T., & Igic, P. (2007). Unified approach in electro-thermal modelling of IGBTs and power PiN diodes. In Proceedings of 19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07 (pp. 165-168). [4294958] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). IEEE. https://doi.org/10.1109/ISPSD.2007.4294958