Unified approach in electro-thermal modelling of IGBTs and power PiN diodes

Nebojsa Jankovic; Takashi Ueta; Kimimori Hatnada; Toshifumi Nishijima; Petar Igic

doi:10.1109/ISPSD.2007.4294958

Unified approach in electro-thermal modelling of IGBTs and power PiN diodes

Nebojsa Jankovic, Takashi Ueta, Kimimori Hatnada, Toshifumi Nishijima, Petar Igic

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

6 Citations (Scopus)

Abstract

The unified electro-thermal modelling of the IGBT and power PiN diode based on modified minority carrier drift-diffusion (DD) theory is described in this paper. PiN and IGBT models are embedded in PSPICE commercial simulation software and successfully tested against commercially available power devices.

Original language	English
Title of host publication	Proceedings of 19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07
Publisher	IEEE
Pages	165-168
Number of pages	4
ISBN (Print)	9781424410958
DOIs	https://doi.org/10.1109/ISPSD.2007.4294958
Publication status	Published - 27 Aug 2007
Externally published	Yes
Event	19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07 - Jeju Island, Korea, Republic of Duration: 27 May 2007 → 31 May 2007

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)	1063-6854

Conference

Conference	19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07
Country/Territory	Korea, Republic of
City	Jeju Island
Period	27/05/07 → 31/05/07

ASJC Scopus subject areas

General Engineering

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10.1109/ISPSD.2007.4294958

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Jankovic, N., Ueta, T., Hatnada, K., Nishijima, T., & Igic, P. (2007). Unified approach in electro-thermal modelling of IGBTs and power PiN diodes. In Proceedings of 19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07 (pp. 165-168). Article 4294958 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). IEEE. https://doi.org/10.1109/ISPSD.2007.4294958

Unified approach in electro-thermal modelling of IGBTs and power PiN diodes. / Jankovic, Nebojsa; Ueta, Takashi; Hatnada, Kimimori et al.
Proceedings of 19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07. IEEE, 2007. p. 165-168 4294958 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

Jankovic, N, Ueta, T, Hatnada, K, Nishijima, T & Igic, P 2007, Unified approach in electro-thermal modelling of IGBTs and power PiN diodes. in Proceedings of 19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07., 4294958, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, IEEE, pp. 165-168, 19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07, Jeju Island, Korea, Republic of, 27/05/07. https://doi.org/10.1109/ISPSD.2007.4294958

Jankovic N, Ueta T, Hatnada K, Nishijima T, Igic P. Unified approach in electro-thermal modelling of IGBTs and power PiN diodes. In Proceedings of 19th International Symposium on Power Semiconductor Devices and ICs, ISPSD'07. IEEE. 2007. p. 165-168. 4294958. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.1109/ISPSD.2007.4294958

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abstract = "The unified electro-thermal modelling of the IGBT and power PiN diode based on modified minority carrier drift-diffusion (DD) theory is described in this paper. PiN and IGBT models are embedded in PSPICE commercial simulation software and successfully tested against commercially available power devices.",

author = "Nebojsa Jankovic and Takashi Ueta and Kimimori Hatnada and Toshifumi Nishijima and Petar Igic",

year = "2007",

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Unified approach in electro-thermal modelling of IGBTs and power PiN diodes

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