Understanding the limits of a hall sensor sensitivity for integration on a GaN power transistor chip: experiments with market available components

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Gallium Nitride (GaN) is an emerging wide bandgap technology in power electronics. It enables higher power density, wider operating temperature range and higher efficiency compared to other widely used technologies, allowing miniaturization and overall weight and cost reductions at system level. In contrast, the technology produces high levels of radio emissions and it is prone to failure without an adequate active power monitoring due to its sensitivity to unmatched electrical parameters. Since intrusive monitoring can disrupt the transistor's efficiency on power delivery, galvanic isolated sensors are intensely explored with the goal of chip-level integration on the difficult-to-manufacture GaN structures. The experimental results in this study reveal that in a power monitoring scenario envisaged for the integration on a GaN transistor chip, a Hall sensor that requires a minimum magnetic field threshold of 1 mT will be sufficient. The noisy GaN transistor environment is tested for three different low power loads, resistive, semi-conductive, and inductive, at 1, 5 and 10 kHz, demonstrating that the radiated emissions relate to the load current rather than voltage, whereas the Hall device measurements show stability and consistency.
Original languageEnglish
Title of host publication12th International Conference on Power Electronics, Machines and Drives (PEMD 2023)
Number of pages7
ISBN (Electronic)9781839539503
Publication statusPublished - 21 Nov 2023
Event12th International Conference on Power Electronics, Machines and Drives - Brussels Marriott Hotel Grand Place, Brussels, Belgium
Duration: 23 Oct 202324 Oct 2023

Publication series

NameIET Conference Proceedings
PublisherInstitution of Engineering and Technology
ISSN (Electronic)2732-4494


Conference12th International Conference on Power Electronics, Machines and Drives
Abbreviated titlePEMD 2023
Internet address

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  • EMI
  • GaN transistor
  • Hall sensor
  • Magnetic field
  • RF emissions

ASJC Scopus subject areas

  • Energy Engineering and Power Technology


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