Underpinning Power Electronics 2017 - Switch Optimisation Theme

P.M, Gammon, P.A. Mawby, Neophytos Lophitis, N Wright, A. O'Neil, Florin Udrea

    Research output: Contribution to conferencePosterpeer-review

    51 Downloads (Pure)


    Silicon carbide (SiC) N-channel IGBTs have the potential to revolutionise new and highly efficient ultrahigh voltage (10 kV+) applications such as HVDC, enabling a low carbon society. However, to date, only four research groups worldwide have reported on their successful development, due to the considerable challenge associated with their fabrication.

    The aim of the Switch Optimisation theme of Underpinning Power Electronics is to be amongst the first groups in Europe, and the world, to develop these devices, to push the boundaries of what has been achieved in this fledgling field to date.
    Original languageEnglish
    Publication statusPublished - Jul 2017
    EventEPSRC Centre for Power Electronics Annual Conference - Holywell Park Conference Centre, Loughborough, United Kingdom
    Duration: 4 Jul 20175 Jul 2017


    ConferenceEPSRC Centre for Power Electronics Annual Conference
    Country/TerritoryUnited Kingdom
    Internet address


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