Abstract
Silicon carbide (SiC) N-channel IGBTs have the potential to revolutionise new and highly efficient ultrahigh voltage (10 kV+) applications such as HVDC, enabling a low carbon society. However, to date, only four research groups worldwide have reported on their successful development, due to the considerable challenge associated with their fabrication.
The aim of the Switch Optimisation theme of Underpinning Power Electronics is to be amongst the first groups in Europe, and the world, to develop these devices, to push the boundaries of what has been achieved in this fledgling field to date.
The aim of the Switch Optimisation theme of Underpinning Power Electronics is to be amongst the first groups in Europe, and the world, to develop these devices, to push the boundaries of what has been achieved in this fledgling field to date.
| Original language | English |
|---|---|
| Publication status | Published - Jul 2017 |
| Event | EPSRC Centre for Power Electronics Annual Conference - Holywell Park Conference Centre, Loughborough, United Kingdom Duration: 4 Jul 2017 → 5 Jul 2017 http://www.powerelectronics.ac.uk/events/event-records/centre-for-power-electronics-annual-conference-2017.aspx |
Conference
| Conference | EPSRC Centre for Power Electronics Annual Conference |
|---|---|
| Country/Territory | United Kingdom |
| City | Loughborough |
| Period | 4/07/17 → 5/07/17 |
| Internet address |
