Two-dimensional semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures by molecular beam epitaxy

K. E. Aretouli, P. Tsipas, D. Tsoutsou, J. Marquez-Velasco, E. Xenogiannopoulou, S. A. Giamini, E. Vassalou, N. Kelaidis, A. Dimoulas

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68 Citations (Scopus)

Abstract

Using molecular beam epitaxy, atomically thin 2D semiconductor HfSe2 and MoSe2/HfSe2 van der Waals heterostructures are grown on AlN(0001)/Si(111) substrates. Details of the electronic band structure of HfSe2 are imaged by in-situ angle resolved photoelectron spectroscopy indicating a high quality epitaxial layer. High-resolution surface tunneling microscopy supported by first principles calculations provides evidence of an ordered Se adlayer, which may be responsible for a reduction of the measured workfunction of HfSe2 compared to theoretical predictions. The latter reduction minimizes the workfunction difference between the HfSe2 and MoSe2 layers resulting in a small valence band offset of only 0.13 eV at the MoSe2/HfSe2 heterointerface and a weak type II band alignment.

Original languageEnglish
Article number143105
JournalApplied Physics Letters
Volume106
Issue number14
DOIs
Publication statusPublished - 6 Apr 2015
Externally publishedYes

Keywords

  • Epitaxy
  • Band Structure
  • Heterojunctions
  • Valence Bands
  • III-V semiconductors

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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