The destruction mechanism in large area IGCTs (Integrated Gate Commutated Thyristors) under inductive switching conditions is analyzed in detail. The three-dimensional nature of the turn-off process in a 91mm diameter wafer is simulated with a two-dimensional representation. Simulation results show that the final destruction is caused by the uneven dynamic avalanche current distribution across the wafer.
|Title of host publication||2011 International Semiconductor Conference, CAS 2011 Proceedings|
|Number of pages||4|
|Publication status||Published - 2011|
|Event||34th International Semiconductor Conference - Sinaia, Romania|
Duration: 17 Oct 2011 → 19 Oct 2011
|Conference||34th International Semiconductor Conference|
|Abbreviated title||CAS 2011|
|Period||17/10/11 → 19/10/11|
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- Integrated Gate Commutated Turn-off Thyristor
- Large Area SOA
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering