Turn-off failure mechanism in large area IGCTs

Neophytos Lophitis, Marina Antoniou, Florin Udrea, Tobias Wikstrom, Iulian Nistor

Research output: Chapter in Book/Report/Conference proceedingConference proceedingpeer-review

5 Citations (Scopus)
27 Downloads (Pure)


The destruction mechanism in large area IGCTs (Integrated Gate Commutated Thyristors) under inductive switching conditions is analyzed in detail. The three-dimensional nature of the turn-off process in a 91mm diameter wafer is simulated with a two-dimensional representation. Simulation results show that the final destruction is caused by the uneven dynamic avalanche current distribution across the wafer.

Original languageEnglish
Title of host publication2011 International Semiconductor Conference, CAS 2011 Proceedings
Number of pages4
ISBN (Electronic)978-1-61284-172-4
Publication statusPublished - 2011
Externally publishedYes
Event34th International Semiconductor Conference - Sinaia, Romania
Duration: 17 Oct 201119 Oct 2011


Conference34th International Semiconductor Conference
Abbreviated titleCAS 2011

Bibliographical note

© 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.


  • Integrated Gate Commutated Turn-off Thyristor
  • Large Area SOA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Turn-off failure mechanism in large area IGCTs'. Together they form a unique fingerprint.

Cite this