Turn-off failure mechanism in large area IGCTs

Neophytos Lophitis; Marina Antoniou; Florin Udrea; Tobias Wikstrom; Iulian Nistor

doi:10.1109/SMICND.2011.6095817

Turn-off failure mechanism in large area IGCTs

Neophytos Lophitis, Marina Antoniou, Florin Udrea, Tobias Wikstrom, Iulian Nistor

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

13 Citations (Scopus)

69 Downloads (Pure)

Abstract

The destruction mechanism in large area IGCTs (Integrated Gate Commutated Thyristors) under inductive switching conditions is analyzed in detail. The three-dimensional nature of the turn-off process in a 91mm diameter wafer is simulated with a two-dimensional representation. Simulation results show that the final destruction is caused by the uneven dynamic avalanche current distribution across the wafer.

Original language	English
Title of host publication	2011 International Semiconductor Conference, CAS 2011 Proceedings
Pages	361-364
Number of pages	4
Volume	2
ISBN (Electronic)	978-1-61284-172-4
DOIs	https://doi.org/10.1109/SMICND.2011.6095817
Publication status	Published - 2011
Externally published	Yes
Event	34th International Semiconductor Conference - Sinaia, Romania Duration: 17 Oct 2011 → 19 Oct 2011

Conference

Conference	34th International Semiconductor Conference
Abbreviated title	CAS 2011
Country/Territory	Romania
City	Sinaia
Period	17/10/11 → 19/10/11

Bibliographical note

© 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Keywords

Integrated Gate Commutated Turn-off Thyristor
Large Area SOA

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1109/SMICND.2011.6095817

Post-PrintAccepted author manuscript, 825 KB

Cite this

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title = "Turn-off failure mechanism in large area IGCTs",

abstract = "The destruction mechanism in large area IGCTs (Integrated Gate Commutated Thyristors) under inductive switching conditions is analyzed in detail. The three-dimensional nature of the turn-off process in a 91mm diameter wafer is simulated with a two-dimensional representation. Simulation results show that the final destruction is caused by the uneven dynamic avalanche current distribution across the wafer.",

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AU - Lophitis, Neophytos

AU - Antoniou, Marina

AU - Udrea, Florin

AU - Wikstrom, Tobias

AU - Nistor, Iulian

N1 - © 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

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AB - The destruction mechanism in large area IGCTs (Integrated Gate Commutated Thyristors) under inductive switching conditions is analyzed in detail. The three-dimensional nature of the turn-off process in a 91mm diameter wafer is simulated with a two-dimensional representation. Simulation results show that the final destruction is caused by the uneven dynamic avalanche current distribution across the wafer.

KW - Integrated Gate Commutated Turn-off Thyristor

KW - Large Area SOA

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DO - 10.1109/SMICND.2011.6095817

M3 - Conference proceeding

AN - SCOPUS:84255187279

SN - 9781612841717

SN - 978-1-61284-173-1

VL - 2

SP - 361

EP - 364

BT - 2011 International Semiconductor Conference, CAS 2011 Proceedings

T2 - 34th International Semiconductor Conference

Y2 - 17 October 2011 through 19 October 2011

ER -

Turn-off failure mechanism in large area IGCTs

Abstract

Conference

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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Cite this