Abstract
The destruction mechanism in large area IGCTs (Integrated Gate Commutated Thyristors) under inductive switching conditions is analyzed in detail. The three-dimensional nature of the turn-off process in a 91mm diameter wafer is simulated with a two-dimensional representation. Simulation results show that the final destruction is caused by the uneven dynamic avalanche current distribution across the wafer.
Original language | English |
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Title of host publication | 2011 International Semiconductor Conference, CAS 2011 Proceedings |
Pages | 361-364 |
Number of pages | 4 |
Volume | 2 |
ISBN (Electronic) | 978-1-61284-172-4 |
DOIs | |
Publication status | Published - 2011 |
Externally published | Yes |
Event | 34th International Semiconductor Conference - Sinaia, Romania Duration: 17 Oct 2011 → 19 Oct 2011 |
Conference
Conference | 34th International Semiconductor Conference |
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Abbreviated title | CAS 2011 |
Country/Territory | Romania |
City | Sinaia |
Period | 17/10/11 → 19/10/11 |
Bibliographical note
© 2011 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.Keywords
- Integrated Gate Commutated Turn-off Thyristor
- Large Area SOA
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering