Transverse resistance in HoBa2Cu3O7−δ single crystals

R.V. Vovk; G.Y. Khadzhai; O.V. Dobrovolskiy; Z.F. Nazyrov; A. Chroneos

doi:10.1142/S0217984915502322

Transverse resistance in HoBa2Cu3O7−δ single crystals

R.V. Vovk
, G.Y. Khadzhai
, O.V. Dobrovolskiy
, Z.F. Nazyrov
, A. Chroneos

Research output: Contribution to journal › Article

1 Citation (Scopus)

Abstract

The transverse electrical resistance of (Formula presented.) single crystals is investigated in the temperature range (Formula presented.) for optimally-doped (Formula presented.) and oxygen-poor (Formula presented.) samples. With decreasing temperature, the resistivity of the optimally-doped samples has been found to transit from the regime of scattering on phonons and defects to the regime of “semiconductor” character and, near (Formula presented.), of the fluctuation conductivity. The oxygen-poor samples have been revealed to exhibit only a variable range hopping conductivity of “semiconductor” character, which near (Formula presented.) transits into the fluctuation conductivity. A significant anisotropy of the residual resistivity and characteristics of the fluctuation conductivity is observed for samples of both types

Original language	English
Journal	Modern Physics Letters B
Volume	In press
DOIs	https://doi.org/10.1142/S0217984915502322
Publication status	Published - Nov 2015

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This paper is not available on the repository

Keywords

Superconducting cuprates
holmium
electrical resistance measurements
anisotropy

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10.1142/S0217984915502322

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@article{e0c7e2736de04d8094c34bf5417869a3,

title = "Transverse resistance in HoBa2Cu3O7−δ single crystals",

abstract = "The transverse electrical resistance of (Formula presented.) single crystals is investigated in the temperature range (Formula presented.) for optimally-doped (Formula presented.) and oxygen-poor (Formula presented.) samples. With decreasing temperature, the resistivity of the optimally-doped samples has been found to transit from the regime of scattering on phonons and defects to the regime of “semiconductor” character and, near (Formula presented.), of the fluctuation conductivity. The oxygen-poor samples have been revealed to exhibit only a variable range hopping conductivity of “semiconductor” character, which near (Formula presented.) transits into the fluctuation conductivity. A significant anisotropy of the residual resistivity and characteristics of the fluctuation conductivity is observed for samples of both types",

keywords = "Superconducting cuprates, holmium, electrical resistance measurements, anisotropy",

author = "R.V. Vovk and G.Y. Khadzhai and O.V. Dobrovolskiy and Z.F. Nazyrov and A. Chroneos",

note = "This paper is not available on the repository",

year = "2015",

month = nov,

doi = "10.1142/S0217984915502322",

language = "English",

volume = "In press",

journal = "Modern Physics Letters B",

issn = "1793-6640",

publisher = "World Scientific",

}

TY - JOUR

T1 - Transverse resistance in HoBa2Cu3O7−δ single crystals

AU - Vovk, R.V.

AU - Khadzhai, G.Y.

AU - Dobrovolskiy, O.V.

AU - Nazyrov, Z.F.

AU - Chroneos, A.

N1 - This paper is not available on the repository

PY - 2015/11

Y1 - 2015/11

N2 - The transverse electrical resistance of (Formula presented.) single crystals is investigated in the temperature range (Formula presented.) for optimally-doped (Formula presented.) and oxygen-poor (Formula presented.) samples. With decreasing temperature, the resistivity of the optimally-doped samples has been found to transit from the regime of scattering on phonons and defects to the regime of “semiconductor” character and, near (Formula presented.), of the fluctuation conductivity. The oxygen-poor samples have been revealed to exhibit only a variable range hopping conductivity of “semiconductor” character, which near (Formula presented.) transits into the fluctuation conductivity. A significant anisotropy of the residual resistivity and characteristics of the fluctuation conductivity is observed for samples of both types

AB - The transverse electrical resistance of (Formula presented.) single crystals is investigated in the temperature range (Formula presented.) for optimally-doped (Formula presented.) and oxygen-poor (Formula presented.) samples. With decreasing temperature, the resistivity of the optimally-doped samples has been found to transit from the regime of scattering on phonons and defects to the regime of “semiconductor” character and, near (Formula presented.), of the fluctuation conductivity. The oxygen-poor samples have been revealed to exhibit only a variable range hopping conductivity of “semiconductor” character, which near (Formula presented.) transits into the fluctuation conductivity. A significant anisotropy of the residual resistivity and characteristics of the fluctuation conductivity is observed for samples of both types

KW - Superconducting cuprates

KW - holmium

KW - electrical resistance measurements

KW - anisotropy

U2 - 10.1142/S0217984915502322

DO - 10.1142/S0217984915502322

M3 - Article

SN - 1793-6640

VL - In press

JO - Modern Physics Letters B

JF - Modern Physics Letters B

ER -

Transverse resistance in HoBa2Cu3O7−δ single crystals

Abstract

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Keywords

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