Transverse resistance in HoBa2Cu3O7−δ single crystals

R.V. Vovk, G.Y. Khadzhai, O.V. Dobrovolskiy, Z.F. Nazyrov, A. Chroneos

Research output: Contribution to journalArticle


The transverse electrical resistance of (Formula presented.) single crystals is investigated in the temperature range (Formula presented.) for optimally-doped (Formula presented.) and oxygen-poor (Formula presented.) samples. With decreasing temperature, the resistivity of the optimally-doped samples has been found to transit from the regime of scattering on phonons and defects to the regime of “semiconductor” character and, near (Formula presented.), of the fluctuation conductivity. The oxygen-poor samples have been revealed to exhibit only a variable range hopping conductivity of “semiconductor” character, which near (Formula presented.) transits into the fluctuation conductivity. A significant anisotropy of the residual resistivity and characteristics of the fluctuation conductivity is observed for samples of both types
Original languageEnglish
JournalModern Physics Letters B
VolumeIn press
Publication statusPublished - Nov 2015

Bibliographical note

This paper is not available on the repository


  • Superconducting cuprates
  • holmium
  • electrical resistance measurements
  • anisotropy


Dive into the research topics of 'Transverse resistance in HoBa2Cu3O7−δ single crystals'. Together they form a unique fingerprint.

Cite this