Thermal model of power semiconductor devices for electro-thermal circuit simulations

P. M. Igic, P. A. Mawby, M. S. Towers, S. Batcup

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

9 Citations (Scopus)

Abstract

An electro-thermal (ET) strategy used for ET circuit simulations is described in this paper. An original program for a MATLAB environment based on a deconvolution method is written and used for a determination of the RC dynamic thermal network parameters. An excellent agreement is obtained between experimental thermal transient response function of the device for a step function excitation and simulated one obtained using corresponding RC thermal network.

Original languageEnglish
Title of host publication2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
PublisherIEEE Computer Society
Pages171-174
Number of pages4
ISBN (Print)9780780372351
DOIs
Publication statusPublished - 7 Aug 2002
Externally publishedYes
Event2002 23rd International Conference on Microelectronics, MIEL 2002 - Nis, Serbia
Duration: 12 May 200215 May 2002

Publication series

Name2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
Volume1

Conference

Conference2002 23rd International Conference on Microelectronics, MIEL 2002
CountrySerbia
CityNis
Period12/05/0215/05/02

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Igic, P. M., Mawby, P. A., Towers, M. S., & Batcup, S. (2002). Thermal model of power semiconductor devices for electro-thermal circuit simulations. In 2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings (pp. 171-174). [1003167] (2002 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings; Vol. 1). IEEE Computer Society. https://doi.org/10.1109/MIEL.2002.1003167