The Stripe Fortified GCT: A new GCT design for maximizing the controllable current

Neophytos Lophitis, M. Antoniou, F. Udrea, I. Nistor, T. Wikstrom, J. Vobecky, M. Rahimo

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

3 Citations (Scopus)
39 Downloads (Pure)

Abstract

In this paper we introduce a new GCT design, namely the Stripe Fortified GCT, for the purpose of maximizing the controllable current by optimizing the current flow path in the device during turn-off. The main design of the new device along with variants are introduced. The MCC performance of this novel structure is assessed with a developed two dimensional model for full wafer simulations. Our results show that this new design is a very good candidate for increasing the MCC to values more than 5000A.

Publisher Statement: © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Original languageEnglish
Title of host publication2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
PublisherIEEE
Pages123 - 126
Number of pages4
ISBN (Electronic)978-1-4799-2918-4, 978-1-4799-2916-0
ISBN (Print)978-1-4799-2917-7
DOIs
Publication statusPublished - 2014
EventIEEE International Symposium on Power Semiconductor Devices and ICs - Waikoloa Village, United States
Duration: 15 Jun 201419 Jun 2014

Conference

ConferenceIEEE International Symposium on Power Semiconductor Devices and ICs
Abbreviated titleISPSD
CountryUnited States
CityWaikoloa Village
Period15/06/1419/06/14

Bibliographical note

© 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Keywords

  • Cathodes
  • Controllability
  • Current density
  • Junctions
  • Logic gates
  • Semiconductor device modeling
  • Thyristors
  • 2D model
  • GCT design
  • MCC performance
  • current flow path
  • gate commutated thyristors
  • maximum controllable current
  • stripe fortified GCT
  • semiconductor device models
  • thyristors

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  • Cite this

    Lophitis, N., Antoniou, M., Udrea, F., Nistor, I., Wikstrom, T., Vobecky, J., & Rahimo, M. (2014). The Stripe Fortified GCT: A new GCT design for maximizing the controllable current. In 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD) (pp. 123 - 126). IEEE. https://doi.org/10.1109/ISPSD.2014.6855991