The Stripe Fortified GCT: A new GCT design for maximizing the controllable current

Neophytos Lophitis; M. Antoniou; F. Udrea; I. Nistor; T. Wikstrom; J. Vobecky; M. Rahimo

doi:10.1109/ISPSD.2014.6855991

The Stripe Fortified GCT: A new GCT design for maximizing the controllable current

Neophytos Lophitis, M. Antoniou, F. Udrea, I. Nistor, T. Wikstrom, J. Vobecky, M. Rahimo

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding

5 Citations (Scopus)

58 Downloads (Pure)

Abstract

In this paper we introduce a new GCT design, namely the Stripe Fortified GCT, for the purpose of maximizing the controllable current by optimizing the current flow path in the device during turn-off. The main design of the new device along with variants are introduced. The MCC performance of this novel structure is assessed with a developed two dimensional model for full wafer simulations. Our results show that this new design is a very good candidate for increasing the MCC to values more than 5000A.

Publisher Statement: © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Original language	English
Title of host publication	2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
Publisher	IEEE
Pages	123 - 126
Number of pages	4
ISBN (Electronic)	978-1-4799-2918-4, 978-1-4799-2916-0
ISBN (Print)	978-1-4799-2917-7
DOIs	https://doi.org/10.1109/ISPSD.2014.6855991
Publication status	Published - 2014
Event	IEEE International Symposium on Power Semiconductor Devices and ICs - Waikoloa Village, United States Duration: 15 Jun 2014 → 19 Jun 2014

Conference

Conference	IEEE International Symposium on Power Semiconductor Devices and ICs
Abbreviated title	ISPSD
Country/Territory	United States
City	Waikoloa Village
Period	15/06/14 → 19/06/14

Bibliographical note

© 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Keywords

Cathodes
Controllability
Current density
Junctions
Logic gates
Semiconductor device modeling
Thyristors
2D model
GCT design
MCC performance
current flow path
gate commutated thyristors
maximum controllable current
stripe fortified GCT
semiconductor device models
thyristors

Access to Document

10.1109/ISPSD.2014.6855991

Post-PrintAccepted author manuscript, 750 KB

Cite this

The Stripe Fortified GCT : A new GCT design for maximizing the controllable current. / Lophitis, Neophytos; Antoniou, M.; Udrea, F.; Nistor, I.; Wikstrom, T.; Vobecky, J.; Rahimo, M.

2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD). IEEE, 2014. p. 123 - 126.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding

Lophitis, N, Antoniou, M, Udrea, F, Nistor, I, Wikstrom, T, Vobecky, J & Rahimo, M 2014, The Stripe Fortified GCT: A new GCT design for maximizing the controllable current. in 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD). IEEE, pp. 123 - 126, IEEE International Symposium on Power Semiconductor Devices and ICs , Waikoloa Village, United States, 15/06/14. https://doi.org/10.1109/ISPSD.2014.6855991

@inproceedings{25972e20c98a411a8b37349348b58199,

title = "The Stripe Fortified GCT: A new GCT design for maximizing the controllable current",

abstract = "In this paper we introduce a new GCT design, namely the Stripe Fortified GCT, for the purpose of maximizing the controllable current by optimizing the current flow path in the device during turn-off. The main design of the new device along with variants are introduced. The MCC performance of this novel structure is assessed with a developed two dimensional model for full wafer simulations. Our results show that this new design is a very good candidate for increasing the MCC to values more than 5000A.Publisher Statement: {\textcopyright} 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.",

keywords = "Cathodes, Controllability, Current density, Junctions, Logic gates, Semiconductor device modeling, Thyristors, 2D model, GCT design, MCC performance, current flow path, gate commutated thyristors, maximum controllable current, stripe fortified GCT, semiconductor device models, thyristors",

author = "Neophytos Lophitis and M. Antoniou and F. Udrea and I. Nistor and T. Wikstrom and J. Vobecky and M. Rahimo",

note = "{\textcopyright} 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.; IEEE International Symposium on Power Semiconductor Devices and ICs , ISPSD ; Conference date: 15-06-2014 Through 19-06-2014",

year = "2014",

doi = "10.1109/ISPSD.2014.6855991",

language = "English",

isbn = "978-1-4799-2917-7",

pages = "123 -- 126",

booktitle = "2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)",

publisher = "IEEE",

address = "United States",

}

TY - GEN

T1 - The Stripe Fortified GCT

T2 - IEEE International Symposium on Power Semiconductor Devices and ICs

AU - Lophitis, Neophytos

AU - Antoniou, M.

AU - Udrea, F.

AU - Nistor, I.

AU - Wikstrom, T.

AU - Vobecky, J.

AU - Rahimo, M.

N1 - © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

PY - 2014

Y1 - 2014

N2 - In this paper we introduce a new GCT design, namely the Stripe Fortified GCT, for the purpose of maximizing the controllable current by optimizing the current flow path in the device during turn-off. The main design of the new device along with variants are introduced. The MCC performance of this novel structure is assessed with a developed two dimensional model for full wafer simulations. Our results show that this new design is a very good candidate for increasing the MCC to values more than 5000A.Publisher Statement: © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

AB - In this paper we introduce a new GCT design, namely the Stripe Fortified GCT, for the purpose of maximizing the controllable current by optimizing the current flow path in the device during turn-off. The main design of the new device along with variants are introduced. The MCC performance of this novel structure is assessed with a developed two dimensional model for full wafer simulations. Our results show that this new design is a very good candidate for increasing the MCC to values more than 5000A.Publisher Statement: © 2014 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

KW - Cathodes

KW - Controllability

KW - Current density

KW - Junctions

KW - Logic gates

KW - Semiconductor device modeling

KW - Thyristors

KW - 2D model

KW - GCT design

KW - MCC performance

KW - current flow path

KW - gate commutated thyristors

KW - maximum controllable current

KW - stripe fortified GCT

KW - semiconductor device models

KW - thyristors

U2 - 10.1109/ISPSD.2014.6855991

DO - 10.1109/ISPSD.2014.6855991

M3 - Conference proceeding

SN - 978-1-4799-2917-7

SP - 123

EP - 126

BT - 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)

PB - IEEE

Y2 - 15 June 2014 through 19 June 2014

ER -

The Stripe Fortified GCT: A new GCT design for maximizing the controllable current

Abstract

Conference

Bibliographical note

Keywords

Access to Document

Fingerprint

Cite this