The Reliability and Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures

Samuel Perkins, Anastasios Arvanitopoulos, Neo Lophitis, Konstantinos N. Gyftakis

Research output: Research - peer-reviewConference proceeding

Abstract

This work provides an experimentally driven comparison between commercialised Gallium Nitride on Silicon (GaN-on-Si) and Silicon (Si) Super Junction (S-J) power devices at high temperatures. High temperature experiments were performed to analyse the static performance and reliability of the Panasonic PGA26C09DV Enhancement (E-mode) p-GaN Gate Injected Transistor (GIT), the Transphorm TPH3206LD and TPH3206PD cascode GaN High Electron Mobility Transistors (HEMTs) and the Infineon SPA15N60C3 Si S-J. The Device Under Tests (DUTs) were characterized in a thermal chamber using the B1505A Power Device Analyzer. The high temperature measurements were taken; analyzed and compared. The performance of the GaN-on-Si devices indicated a strong robustness in thermally challenging environments and demonstrated superior performances at higher temperatures in comparison to traditional Si S-J technology.
LanguageEnglish
Title of host publication2018 1st IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia 2018)
Place of PublicationXi’an, Shaanxi, China
PublisherIEEE
Pages(in press)
Volume(in press)
StateAccepted/In press - 4 Feb 2018
Event2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) - Xi'an, China
Duration: 16 May 201818 May 2018
Conference number: 1
http://www.wipda-asia.org/index.html

Conference

Conference2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
Abbreviated titleWiPDA Asia
CountryChina
CityXi'an
Period16/05/1818/05/18
Internet address

Fingerprint

Gallium nitride
Silicon
Temperature
High electron mobility transistors
Temperature measurement
Experiments

Cite this

Perkins, S., Arvanitopoulos, A., Lophitis, N., & Gyftakis, K. N. (2018). The Reliability and Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures. In 2018 1st IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia 2018) (Vol. (in press), pp. (in press)). Xi’an, Shaanxi, China : IEEE.

The Reliability and Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures. / Perkins, Samuel; Arvanitopoulos, Anastasios; Lophitis, Neo; Gyftakis, Konstantinos N.

2018 1st IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia 2018). Vol. (in press) Xi’an, Shaanxi, China : IEEE, 2018. p. (in press).

Research output: Research - peer-reviewConference proceeding

Perkins, S, Arvanitopoulos, A, Lophitis, N & Gyftakis, KN 2018, The Reliability and Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures. in 2018 1st IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia 2018). vol. (in press), IEEE, Xi’an, Shaanxi, China , pp. (in press), 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), Xi'an, China, 16/05/18.
Perkins S, Arvanitopoulos A, Lophitis N, Gyftakis KN. The Reliability and Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures. In 2018 1st IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia 2018). Vol. (in press). Xi’an, Shaanxi, China : IEEE. 2018. p. (in press).
Perkins, Samuel ; Arvanitopoulos, Anastasios ; Lophitis, Neo ; Gyftakis, Konstantinos N./ The Reliability and Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures. 2018 1st IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA-Asia 2018). Vol. (in press) Xi’an, Shaanxi, China : IEEE, 2018. pp. (in press)
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