The effect of self-heating and electrical stress induced polarization in AlGaN/GaN heterojunction based devices

Khaled Ahmeda, Soroush Faramehr, Petar Igic, Karol Kalna, Steven. J Duffy, Ali Solatni, Brahim Benbakhti

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

Abstract

The effect of self-heating and polarisation is studied in AlGaN/GaN Transmission Line Measurement (TLM) structures with varying the contact spacing between the source and drain. The measurement results of the I-V characteristics are calibrated and investigated by TCAD Silvaco. The self-heating simulations show a hotspot at the vicinity of the drain side. The electrical stress that is applied on the Ohmic contacts decreases the polarisation as the source-drain distance is reduced, causing the inverse piezoelectric effect.
Original languageEnglish
Title of host publication2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)
PublisherIEEE
Pages203-206
Number of pages4
ISBN (Electronic)978-1-5090-3083-5
ISBN (Print)978-1-5090-3084-2
DOIs
Publication statusPublished - 5 Jan 2017
Event2016 11th International Conference on Advanced Semiconductor Devices & Microsystems  - Smolenice, Slovakia
Duration: 13 Nov 201616 Nov 2016
Conference number: 11th

Conference

Conference2016 11th International Conference on Advanced Semiconductor Devices & Microsystems 
Abbreviated titleASDAM
CountrySlovakia
CitySmolenice
Period13/11/1616/11/16

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    Ahmeda, K., Faramehr, S., Igic, P., Kalna, K., Duffy, S. J., Solatni, A., & Benbakhti, B. (2017). The effect of self-heating and electrical stress induced polarization in AlGaN/GaN heterojunction based devices. In 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) (pp. 203-206). IEEE. https://doi.org/10.1109/ASDAM.2016.7805930