The effect of self-heating and electrical stress induced polarization in AlGaN/GaN heterojunction based devices

Khaled Ahmeda; Soroush Faramehr; Petar Igic; Karol Kalna; Steven. J Duffy; Ali Solatni; Brahim Benbakhti

doi:10.1109/ASDAM.2016.7805930

The effect of self-heating and electrical stress induced polarization in AlGaN/GaN heterojunction based devices

Khaled Ahmeda, Soroush Faramehr, Petar Igic, Karol Kalna, Steven. J Duffy, Ali Solatni, Brahim Benbakhti

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

2 Citations (Scopus)

Abstract

The effect of self-heating and polarisation is studied in AlGaN/GaN Transmission Line Measurement (TLM) structures with varying the contact spacing between the source and drain. The measurement results of the I-V characteristics are calibrated and investigated by TCAD Silvaco. The self-heating simulations show a hotspot at the vicinity of the drain side. The electrical stress that is applied on the Ohmic contacts decreases the polarisation as the source-drain distance is reduced, causing the inverse piezoelectric effect.

Original language	English
Title of host publication	2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)
Publisher	IEEE
Pages	203-206
Number of pages	4
ISBN (Electronic)	978-1-5090-3083-5
ISBN (Print)	978-1-5090-3084-2
DOIs	https://doi.org/10.1109/ASDAM.2016.7805930
Publication status	Published - 5 Jan 2017
Event	2016 11th International Conference on Advanced Semiconductor Devices & Microsystems - Smolenice, Slovakia Duration: 13 Nov 2016 → 16 Nov 2016 Conference number: 11th

Conference

Conference	2016 11th International Conference on Advanced Semiconductor Devices & Microsystems
Abbreviated title	ASDAM
Country/Territory	Slovakia
City	Smolenice
Period	13/11/16 → 16/11/16

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10.1109/ASDAM.2016.7805930

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The effect of self-heating and electrical stress induced polarization in AlGaN/GaN heterojunction based devices. / Ahmeda, Khaled; Faramehr, Soroush ; Igic, Petar et al.
2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM). IEEE, 2017. p. 203-206.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

Ahmeda, K, Faramehr, S , Igic, P, Kalna, K, Duffy, SJ, Solatni, A & Benbakhti, B 2017, The effect of self-heating and electrical stress induced polarization in AlGaN/GaN heterojunction based devices. in 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM). IEEE, pp. 203-206, 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems , Smolenice, Slovakia, 13/11/16. https://doi.org/10.1109/ASDAM.2016.7805930

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abstract = "The effect of self-heating and polarisation is studied in AlGaN/GaN Transmission Line Measurement (TLM) structures with varying the contact spacing between the source and drain. The measurement results of the I-V characteristics are calibrated and investigated by TCAD Silvaco. The self-heating simulations show a hotspot at the vicinity of the drain side. The electrical stress that is applied on the Ohmic contacts decreases the polarisation as the source-drain distance is reduced, causing the inverse piezoelectric effect.",

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AU - Ahmeda, Khaled

AU - Faramehr, Soroush

AU - Igic, Petar

AU - Kalna, Karol

AU - Duffy, Steven. J

AU - Solatni, Ali

AU - Benbakhti, Brahim

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N2 - The effect of self-heating and polarisation is studied in AlGaN/GaN Transmission Line Measurement (TLM) structures with varying the contact spacing between the source and drain. The measurement results of the I-V characteristics are calibrated and investigated by TCAD Silvaco. The self-heating simulations show a hotspot at the vicinity of the drain side. The electrical stress that is applied on the Ohmic contacts decreases the polarisation as the source-drain distance is reduced, causing the inverse piezoelectric effect.

AB - The effect of self-heating and polarisation is studied in AlGaN/GaN Transmission Line Measurement (TLM) structures with varying the contact spacing between the source and drain. The measurement results of the I-V characteristics are calibrated and investigated by TCAD Silvaco. The self-heating simulations show a hotspot at the vicinity of the drain side. The electrical stress that is applied on the Ohmic contacts decreases the polarisation as the source-drain distance is reduced, causing the inverse piezoelectric effect.

U2 - 10.1109/ASDAM.2016.7805930

DO - 10.1109/ASDAM.2016.7805930

M3 - Conference proceeding

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EP - 206

BT - 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)

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Y2 - 13 November 2016 through 16 November 2016

ER -

The effect of self-heating and electrical stress induced polarization in AlGaN/GaN heterojunction based devices

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