The destruction mechanism in GCTs

Neophytos Lophitis, Marina Antoniou, Florin Udrea, Friedhelm D. Bauer, Iulian Nistor, M. Arnold, Tobias Wikstrom, Jan Vobecky

Research output: Contribution to journalArticle

  • 12 Citations

Abstract

This paper focuses on the causes that lead to the final destruction in standard gate-commutated thyristor (GCT) devices. A new 3-D model approach has been used for simulating the GCT which provides a deep insight into the operation of the GCT in extreme conditions. This allows drawing some conclusions on the complex mechanisms that drive these devices to destruction, previously impossible to explain using 2-D models. 

LanguageEnglish
Article number6410404
Pages819-826
Number of pages8
JournalElectron Devices
Volume60
Issue number2
DOIs
StatePublished - 2013
Externally publishedYes

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Thyristors

Bibliographical note

© 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Keywords

  • Full wafer modeling
  • gate-commutated thyristor (GCT)
  • maximum controllable current (MCC)
  • safe operating area
  • thyristor

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Lophitis, N., Antoniou, M., Udrea, F., Bauer, F. D., Nistor, I., Arnold, M., ... Vobecky, J. (2013). The destruction mechanism in GCTs. Electron Devices, 60(2), 819-826. [6410404]. DOI: 10.1109/TED.2012.2235442

The destruction mechanism in GCTs. / Lophitis, Neophytos; Antoniou, Marina; Udrea, Florin; Bauer, Friedhelm D.; Nistor, Iulian; Arnold, M.; Wikstrom, Tobias; Vobecky, Jan.

In: Electron Devices, Vol. 60, No. 2, 6410404, 2013, p. 819-826.

Research output: Contribution to journalArticle

Lophitis, N, Antoniou, M, Udrea, F, Bauer, FD, Nistor, I, Arnold, M, Wikstrom, T & Vobecky, J 2013, 'The destruction mechanism in GCTs' Electron Devices, vol. 60, no. 2, 6410404, pp. 819-826. DOI: 10.1109/TED.2012.2235442
Lophitis N, Antoniou M, Udrea F, Bauer FD, Nistor I, Arnold M et al. The destruction mechanism in GCTs. Electron Devices. 2013;60(2):819-826. 6410404. Available from, DOI: 10.1109/TED.2012.2235442
Lophitis, Neophytos ; Antoniou, Marina ; Udrea, Florin ; Bauer, Friedhelm D. ; Nistor, Iulian ; Arnold, M. ; Wikstrom, Tobias ; Vobecky, Jan. / The destruction mechanism in GCTs. In: Electron Devices. 2013 ; Vol. 60, No. 2. pp. 819-826
@article{a967fe58e9d74a9b8cfdf94859e1cae6,
title = "The destruction mechanism in GCTs",
abstract = "This paper focuses on the causes that lead to the final destruction in standard gate-commutated thyristor (GCT) devices. A new 3-D model approach has been used for simulating the GCT which provides a deep insight into the operation of the GCT in extreme conditions. This allows drawing some conclusions on the complex mechanisms that drive these devices to destruction, previously impossible to explain using 2-D models. ",
keywords = "Full wafer modeling, gate-commutated thyristor (GCT), maximum controllable current (MCC), safe operating area, thyristor",
author = "Neophytos Lophitis and Marina Antoniou and Florin Udrea and Bauer, {Friedhelm D.} and Iulian Nistor and M. Arnold and Tobias Wikstrom and Jan Vobecky",
note = "{\circledC} 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.",
year = "2013",
doi = "10.1109/TED.2012.2235442",
language = "English",
volume = "60",
pages = "819--826",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "IEEE",
number = "2",

}

TY - JOUR

T1 - The destruction mechanism in GCTs

AU - Lophitis,Neophytos

AU - Antoniou,Marina

AU - Udrea,Florin

AU - Bauer,Friedhelm D.

AU - Nistor,Iulian

AU - Arnold,M.

AU - Wikstrom,Tobias

AU - Vobecky,Jan

N1 - © 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

PY - 2013

Y1 - 2013

N2 - This paper focuses on the causes that lead to the final destruction in standard gate-commutated thyristor (GCT) devices. A new 3-D model approach has been used for simulating the GCT which provides a deep insight into the operation of the GCT in extreme conditions. This allows drawing some conclusions on the complex mechanisms that drive these devices to destruction, previously impossible to explain using 2-D models. 

AB - This paper focuses on the causes that lead to the final destruction in standard gate-commutated thyristor (GCT) devices. A new 3-D model approach has been used for simulating the GCT which provides a deep insight into the operation of the GCT in extreme conditions. This allows drawing some conclusions on the complex mechanisms that drive these devices to destruction, previously impossible to explain using 2-D models. 

KW - Full wafer modeling

KW - gate-commutated thyristor (GCT)

KW - maximum controllable current (MCC)

KW - safe operating area

KW - thyristor

U2 - 10.1109/TED.2012.2235442

DO - 10.1109/TED.2012.2235442

M3 - Article

VL - 60

SP - 819

EP - 826

JO - IEEE Transactions on Electron Devices

T2 - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 2

M1 - 6410404

ER -