The destruction mechanism in GCTs

Neophytos Lophitis, Marina Antoniou, Florin Udrea, Friedhelm D. Bauer, Iulian Nistor, M. Arnold, Tobias Wikstrom, Jan Vobecky

Research output: Contribution to journalArticle

19 Citations (Scopus)
19 Downloads (Pure)

Abstract

This paper focuses on the causes that lead to the final destruction in standard gate-commutated thyristor (GCT) devices. A new 3-D model approach has been used for simulating the GCT which provides a deep insight into the operation of the GCT in extreme conditions. This allows drawing some conclusions on the complex mechanisms that drive these devices to destruction, previously impossible to explain using 2-D models. 

Original languageEnglish
Article number6410404
Pages (from-to)819-826
Number of pages8
JournalElectron Devices
Volume60
Issue number2
DOIs
Publication statusPublished - 2013
Externally publishedYes

Bibliographical note

© 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Keywords

  • Full wafer modeling
  • gate-commutated thyristor (GCT)
  • maximum controllable current (MCC)
  • safe operating area
  • thyristor

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Fingerprint Dive into the research topics of 'The destruction mechanism in GCTs'. Together they form a unique fingerprint.

  • Cite this

    Lophitis, N., Antoniou, M., Udrea, F., Bauer, F. D., Nistor, I., Arnold, M., ... Vobecky, J. (2013). The destruction mechanism in GCTs. Electron Devices, 60(2), 819-826. [6410404]. https://doi.org/10.1109/TED.2012.2235442