The destruction mechanism in GCTs

Neophytos Lophitis; Marina Antoniou; Florin Udrea; Friedhelm D. Bauer; Iulian Nistor; M. Arnold; Tobias Wikstrom; Jan Vobecky

doi:10.1109/TED.2012.2235442

The destruction mechanism in GCTs

Neophytos Lophitis, Marina Antoniou, Florin Udrea, Friedhelm D. Bauer, Iulian Nistor, M. Arnold, Tobias Wikstrom, Jan Vobecky

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

84 Downloads (Pure)

Abstract

This paper focuses on the causes that lead to the final destruction in standard gate-commutated thyristor (GCT) devices. A new 3-D model approach has been used for simulating the GCT which provides a deep insight into the operation of the GCT in extreme conditions. This allows drawing some conclusions on the complex mechanisms that drive these devices to destruction, previously impossible to explain using 2-D models.

Original language	English
Article number	6410404
Pages (from-to)	819-826
Number of pages	8
Journal	Electron Devices
Volume	60
Issue number	2
DOIs	https://doi.org/10.1109/TED.2012.2235442
Publication status	Published - 2013
Externally published	Yes

Bibliographical note

© 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Keywords

Full wafer modeling
gate-commutated thyristor (GCT)
maximum controllable current (MCC)
safe operating area
thyristor

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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10.1109/TED.2012.2235442

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Cite this

@article{a967fe58e9d74a9b8cfdf94859e1cae6,

title = "The destruction mechanism in GCTs",

abstract = "This paper focuses on the causes that lead to the final destruction in standard gate-commutated thyristor (GCT) devices. A new 3-D model approach has been used for simulating the GCT which provides a deep insight into the operation of the GCT in extreme conditions. This allows drawing some conclusions on the complex mechanisms that drive these devices to destruction, previously impossible to explain using 2-D models. ",

keywords = "Full wafer modeling, gate-commutated thyristor (GCT), maximum controllable current (MCC), safe operating area, thyristor",

author = "Neophytos Lophitis and Marina Antoniou and Florin Udrea and Bauer, {Friedhelm D.} and Iulian Nistor and M. Arnold and Tobias Wikstrom and Jan Vobecky",

note = "{\textcopyright} 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.",

year = "2013",

doi = "10.1109/TED.2012.2235442",

language = "English",

volume = "60",

pages = "819--826",

journal = "Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers",

number = "2",

}

TY - JOUR

T1 - The destruction mechanism in GCTs

AU - Lophitis, Neophytos

AU - Antoniou, Marina

AU - Udrea, Florin

AU - Bauer, Friedhelm D.

AU - Nistor, Iulian

AU - Arnold, M.

AU - Wikstrom, Tobias

AU - Vobecky, Jan

N1 - © 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

PY - 2013

Y1 - 2013

N2 - This paper focuses on the causes that lead to the final destruction in standard gate-commutated thyristor (GCT) devices. A new 3-D model approach has been used for simulating the GCT which provides a deep insight into the operation of the GCT in extreme conditions. This allows drawing some conclusions on the complex mechanisms that drive these devices to destruction, previously impossible to explain using 2-D models.

AB - This paper focuses on the causes that lead to the final destruction in standard gate-commutated thyristor (GCT) devices. A new 3-D model approach has been used for simulating the GCT which provides a deep insight into the operation of the GCT in extreme conditions. This allows drawing some conclusions on the complex mechanisms that drive these devices to destruction, previously impossible to explain using 2-D models.

KW - Full wafer modeling

KW - gate-commutated thyristor (GCT)

KW - maximum controllable current (MCC)

KW - safe operating area

KW - thyristor

U2 - 10.1109/TED.2012.2235442

DO - 10.1109/TED.2012.2235442

M3 - Article

AN - SCOPUS:84872848385

SN - 0018-9383

VL - 60

SP - 819

EP - 826

JO - Electron Devices

JF - Electron Devices

IS - 2

M1 - 6410404

ER -

The destruction mechanism in GCTs

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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