The destruction mechanism in GCTs

Neophytos Lophitis, Marina Antoniou, Florin Udrea, Friedhelm D. Bauer, Iulian Nistor, M. Arnold, Tobias Wikstrom, Jan Vobecky

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)
63 Downloads (Pure)


This paper focuses on the causes that lead to the final destruction in standard gate-commutated thyristor (GCT) devices. A new 3-D model approach has been used for simulating the GCT which provides a deep insight into the operation of the GCT in extreme conditions. This allows drawing some conclusions on the complex mechanisms that drive these devices to destruction, previously impossible to explain using 2-D models. 

Original languageEnglish
Article number6410404
Pages (from-to)819-826
Number of pages8
JournalElectron Devices
Issue number2
Publication statusPublished - 2013
Externally publishedYes

Bibliographical note

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  • Full wafer modeling
  • gate-commutated thyristor (GCT)
  • maximum controllable current (MCC)
  • safe operating area
  • thyristor

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials


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