The Ci(SiI)n defect in neutron‑irradiated silicon

C. A. Londos, Stavros Christopoulos, Alexander Chroneos, T. Angeletos, M. Potsidi, G. Antonaras

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    We report experimental results in neutron-irradiated silicon containing carbon. Initially, carbon interstitial (C i) defects form and readily associate with self-interstitials in the course of irradiation leading to the production of C i(Si I) defects and upon annealing to the sequential formation of C i(Si I) n complexes. Infrared spectroscopy measurements report the detection of two localized vibrational bands at 953 and 960 cm −1 related to the C i(Si I) defect. The thermal stability and annealing kinetics of the defect are discussed. The decay out of the two bands occurs in the temperature range of 130–200 °C. They follow second-order kinetics with an activation energy of 0.93 eV. No other bands were detected to grow in the spectra upon their annealing. Density functional theory calculations were used to investigate the structure and the energetics of the C i(Si I) and the C i(Si I) 2 defects.

    Original languageEnglish
    Pages (from-to)930-934
    Number of pages5
    JournalJournal of Materials Science: Materials in Electronics
    Issue number2
    Early online date30 Nov 2019
    Publication statusPublished - Jan 2020

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    Funding Information: T. Angeletos is grateful to the A. S. Onassis Foundation for financial support though his Ph.D. scholarship (Grant No. G ZL 001-1/2015-2016).

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Condensed Matter Physics
    • Electrical and Electronic Engineering


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