The Ci(SiI)n defect in neutron‑irradiated silicon

C. A. Londos; Stavros Christopoulos; Alexander Chroneos; T. Angeletos; M. Potsidi; G. Antonaras

doi:10.1007/s10854-019-02602-4

The Ci(SiI)n defect in neutron‑irradiated silicon

C. A. Londos, Stavros Christopoulos, Alexander Chroneos, T. Angeletos, M. Potsidi, G. Antonaras

National and Kapodistrian University of Athens

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Abstract

We report experimental results in neutron-irradiated silicon containing carbon. Initially, carbon interstitial (C _i) defects form and readily associate with self-interstitials in the course of irradiation leading to the production of C _i(Si _I) defects and upon annealing to the sequential formation of C _i(Si _I) _n complexes. Infrared spectroscopy measurements report the detection of two localized vibrational bands at 953 and 960 cm ⁻¹ related to the C _i(Si _I) defect. The thermal stability and annealing kinetics of the defect are discussed. The decay out of the two bands occurs in the temperature range of 130–200 °C. They follow second-order kinetics with an activation energy of 0.93 eV. No other bands were detected to grow in the spectra upon their annealing. Density functional theory calculations were used to investigate the structure and the energetics of the C _i(Si _I) and the C _i(Si _I) ₂ defects.

Original language	English
Pages (from-to)	930-934
Number of pages	5
Journal	Journal of Materials Science: Materials in Electronics
Volume	31
Issue number	2
Early online date	30 Nov 2019
DOIs	https://doi.org/10.1007/s10854-019-02602-4
Publication status	Published - Jan 2020

Bibliographical note

The final publication is available at Springer via http://dx.doi.org/10.1007/s10854-019-02602-4
Copyright © and Moral Rights are retained by the author(s) and/ or other copyright owners. A copy can be downloaded for personal non-commercial research or study, without prior permission
or charge. This item cannot be reproduced or quoted extensively from without first obtaining permission in writing from the copyright holder(s). The content must not be changed in any way or
sold commercially in any format or medium without the formal permission of the copyright holders.

Funder

Funding Information: T. Angeletos is grateful to the A. S. Onassis Foundation for financial support though his Ph.D. scholarship (Grant No. G ZL 001-1/2015-2016).

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1007/s10854-019-02602-4

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title = "The Ci(SiI)n defect in neutron‑irradiated silicon",

abstract = "We report experimental results in neutron-irradiated silicon containing carbon. Initially, carbon interstitial (C i) defects form and readily associate with self-interstitials in the course of irradiation leading to the production of C i(Si I) defects and upon annealing to the sequential formation of C i(Si I) n complexes. Infrared spectroscopy measurements report the detection of two localized vibrational bands at 953 and 960 cm −1 related to the C i(Si I) defect. The thermal stability and annealing kinetics of the defect are discussed. The decay out of the two bands occurs in the temperature range of 130–200 °C. They follow second-order kinetics with an activation energy of 0.93 eV. No other bands were detected to grow in the spectra upon their annealing. Density functional theory calculations were used to investigate the structure and the energetics of the C i(Si I) and the C i(Si I) 2 defects. ",

author = "Londos, {C. A.} and Stavros Christopoulos and Alexander Chroneos and T. Angeletos and M. Potsidi and G. Antonaras",

note = "The final publication is available at Springer via http://dx.doi.org/10.1007/s10854-019-02602-4 Copyright {\textcopyright} and Moral Rights are retained by the author(s) and/ or other copyright owners. A copy can be downloaded for personal non-commercial research or study, without prior permission or charge. This item cannot be reproduced or quoted extensively from without first obtaining permission in writing from the copyright holder(s). The content must not be changed in any way or sold commercially in any format or medium without the formal permission of the copyright holders. ",

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AU - Chroneos, Alexander

AU - Angeletos, T.

AU - Potsidi, M.

AU - Antonaras, G.

N1 - The final publication is available at Springer via http://dx.doi.org/10.1007/s10854-019-02602-4 Copyright © and Moral Rights are retained by the author(s) and/ or other copyright owners. A copy can be downloaded for personal non-commercial research or study, without prior permission or charge. This item cannot be reproduced or quoted extensively from without first obtaining permission in writing from the copyright holder(s). The content must not be changed in any way or sold commercially in any format or medium without the formal permission of the copyright holders.

PY - 2020/1

Y1 - 2020/1

N2 - We report experimental results in neutron-irradiated silicon containing carbon. Initially, carbon interstitial (C i) defects form and readily associate with self-interstitials in the course of irradiation leading to the production of C i(Si I) defects and upon annealing to the sequential formation of C i(Si I) n complexes. Infrared spectroscopy measurements report the detection of two localized vibrational bands at 953 and 960 cm −1 related to the C i(Si I) defect. The thermal stability and annealing kinetics of the defect are discussed. The decay out of the two bands occurs in the temperature range of 130–200 °C. They follow second-order kinetics with an activation energy of 0.93 eV. No other bands were detected to grow in the spectra upon their annealing. Density functional theory calculations were used to investigate the structure and the energetics of the C i(Si I) and the C i(Si I) 2 defects.

AB - We report experimental results in neutron-irradiated silicon containing carbon. Initially, carbon interstitial (C i) defects form and readily associate with self-interstitials in the course of irradiation leading to the production of C i(Si I) defects and upon annealing to the sequential formation of C i(Si I) n complexes. Infrared spectroscopy measurements report the detection of two localized vibrational bands at 953 and 960 cm −1 related to the C i(Si I) defect. The thermal stability and annealing kinetics of the defect are discussed. The decay out of the two bands occurs in the temperature range of 130–200 °C. They follow second-order kinetics with an activation energy of 0.93 eV. No other bands were detected to grow in the spectra upon their annealing. Density functional theory calculations were used to investigate the structure and the energetics of the C i(Si I) and the C i(Si I) 2 defects.

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The Ci(SiI)n defect in neutron‑irradiated silicon

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Stavros Christopoulos

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The Ci(SiI)n defect in neutron‑irradiated silicon

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