TCAD Modelling of Magnetic Hall Effect Sensors

Vartika Pandey; Vlad Marsic; Petar Igic; Soroush Faramehr

doi:10.3390/inventions9040072

TCAD Modelling of Magnetic Hall Effect Sensors

Vartika Pandey, Vlad Marsic, Petar Igic, Soroush Faramehr

Centre for E-Mobility and Clean Growth

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Abstract

In this paper, a gallium nitride (GaN) magnetic Hall effect current sensor is simulated in 2D and 3D using the TCAD Sentaurus simulation toolbox. The model takes into account the piezoelectric polarization effect and the Shockley–Read–Hall (SRH) and Fermi–Dirac statistics for all simulations. The galvanic transport model of TCAD Sentaurus is used to model the Lorentz force and magnetic behaviour of the sensor. The current difference, total current, and sensitivity simulations are systematically calibrated against experimental data. The sensor is optimised using varying geometrical and biasing parameters for various ambient temperatures. This unintentionally doped ungated current sensor has enhanced sensitivity to 16.5 %T⁻¹ when reducing the spacing between the drains to 1 μm and increasing the source to drain spacing to 76 μm. It is demonstrated that the sensitivity degrades at 448 K (S = 12 %T⁻¹), 373 K (S = 14.1 %T⁻¹) compared to 300 K (S = 16.5 %T⁻¹). The simulation results demonstrate a high sensitivity of GaN sensors at elevated temperatures, outperforming silicon counterparts.

Original language	English
Article number	72
Number of pages	15
Journal	Inventions
Volume	9
Issue number	4
DOIs	https://doi.org/10.3390/inventions9040072
Publication status	Published - 10 Jul 2024

Bibliographical note

This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Funder

This research was funded by Coventry University, grant number 13771-114. The APC was funded by Centre for E-Mobility and Clean Growth.

Keywords

gallium nitride
Hall effect
sensors
TCAD

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Pandey2024VoRFinal published version, 1.57 MBLicence: CC BY

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title = "TCAD Modelling of Magnetic Hall Effect Sensors",

abstract = "In this paper, a gallium nitride (GaN) magnetic Hall effect current sensor is simulated in 2D and 3D using the TCAD Sentaurus simulation toolbox. The model takes into account the piezoelectric polarization effect and the Shockley–Read–Hall (SRH) and Fermi–Dirac statistics for all simulations. The galvanic transport model of TCAD Sentaurus is used to model the Lorentz force and magnetic behaviour of the sensor. The current difference, total current, and sensitivity simulations are systematically calibrated against experimental data. The sensor is optimised using varying geometrical and biasing parameters for various ambient temperatures. This unintentionally doped ungated current sensor has enhanced sensitivity to 16.5 %T−1 when reducing the spacing between the drains to 1 μm and increasing the source to drain spacing to 76 μm. It is demonstrated that the sensitivity degrades at 448 K (S = 12 %T−1), 373 K (S = 14.1 %T−1) compared to 300 K (S = 16.5 %T−1). The simulation results demonstrate a high sensitivity of GaN sensors at elevated temperatures, outperforming silicon counterparts.",

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author = "Vartika Pandey and Vlad Marsic and Petar Igic and Soroush Faramehr",

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AU - Marsic, Vlad

AU - Igic, Petar

AU - Faramehr, Soroush

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PY - 2024/7/10

Y1 - 2024/7/10

N2 - In this paper, a gallium nitride (GaN) magnetic Hall effect current sensor is simulated in 2D and 3D using the TCAD Sentaurus simulation toolbox. The model takes into account the piezoelectric polarization effect and the Shockley–Read–Hall (SRH) and Fermi–Dirac statistics for all simulations. The galvanic transport model of TCAD Sentaurus is used to model the Lorentz force and magnetic behaviour of the sensor. The current difference, total current, and sensitivity simulations are systematically calibrated against experimental data. The sensor is optimised using varying geometrical and biasing parameters for various ambient temperatures. This unintentionally doped ungated current sensor has enhanced sensitivity to 16.5 %T−1 when reducing the spacing between the drains to 1 μm and increasing the source to drain spacing to 76 μm. It is demonstrated that the sensitivity degrades at 448 K (S = 12 %T−1), 373 K (S = 14.1 %T−1) compared to 300 K (S = 16.5 %T−1). The simulation results demonstrate a high sensitivity of GaN sensors at elevated temperatures, outperforming silicon counterparts.

AB - In this paper, a gallium nitride (GaN) magnetic Hall effect current sensor is simulated in 2D and 3D using the TCAD Sentaurus simulation toolbox. The model takes into account the piezoelectric polarization effect and the Shockley–Read–Hall (SRH) and Fermi–Dirac statistics for all simulations. The galvanic transport model of TCAD Sentaurus is used to model the Lorentz force and magnetic behaviour of the sensor. The current difference, total current, and sensitivity simulations are systematically calibrated against experimental data. The sensor is optimised using varying geometrical and biasing parameters for various ambient temperatures. This unintentionally doped ungated current sensor has enhanced sensitivity to 16.5 %T−1 when reducing the spacing between the drains to 1 μm and increasing the source to drain spacing to 76 μm. It is demonstrated that the sensitivity degrades at 448 K (S = 12 %T−1), 373 K (S = 14.1 %T−1) compared to 300 K (S = 16.5 %T−1). The simulation results demonstrate a high sensitivity of GaN sensors at elevated temperatures, outperforming silicon counterparts.

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KW - sensors

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DO - 10.3390/inventions9040072

M3 - Article

SN - 2411-5134

VL - 9

JO - Inventions

JF - Inventions

IS - 4

M1 - 72

ER -

TCAD Modelling of Magnetic Hall Effect Sensors

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