TCAD modelling of current dispersion in a 0.25 µm gate length GaN HEMT

Soroush Faramehr; Petar Igic; Karol Kalna

doi:10.1109/ASDAM.2012.6418566

TCAD modelling of current dispersion in a 0.25 µm gate length GaN HEMT

Soroush Faramehr, Petar Igic, Karol Kalna

Swansea University

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

2 Citations (Scopus)

90 Downloads (Pure)

Abstract

Current dispersion due to acceptor-type defects acting as electron traps are studied using 2D TCAD transient simulations. High and low drain pulse voltages are applied to study a dynamic picture of trapping and de-trapping of electrons using Drift Diffusion and Hydrodynamic transport models. In addition, Schottky electron tunnelling is employed to transient simulations in the presence of different densities of traps in the barrier to investigate how tunnelling affects the drain current at off-state.

Original language	English
Title of host publication	The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems
Publisher	IEEE
Pages	11-14
Number of pages	4
ISBN (Print)	978-1-4673-1198-4, 978-1-4673-1197-7
DOIs	https://doi.org/10.1109/ASDAM.2012.6418566
Publication status	Published - 24 Jan 2013
Externally published	Yes
Event	The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems - Smolenice, Slovakia Duration: 11 Nov 2012 → 15 Nov 2012

Conference

Conference	The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems
Country/Territory	Slovakia
City	Smolenice
Period	11/11/12 → 15/11/12

Bibliographical note

© 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Copyright © and Moral Rights are retained by the author(s) and/ or other copyright owners. A copy can be downloaded for personal non-commercial research or study, without prior permission or charge. This item cannot be reproduced or quoted extensively from without first obtaining permission in writing from the copyright holder(s). The content must not be changed in any way or sold commercially in any format or medium without the formal permission of the copyright holders.

Keywords

Gallium nitride
Electron traps
HEMTs
Tunneling
Logic gates
Aluminum gallium nitride

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10.1109/ASDAM.2012.6418566

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Faramehr, S , Igic, P & Kalna, K 2013, TCAD modelling of current dispersion in a 0.25 µm gate length GaN HEMT. in The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems . IEEE, pp. 11-14, The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems, Smolenice, Slovakia, 11/11/12. https://doi.org/10.1109/ASDAM.2012.6418566

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title = "TCAD modelling of current dispersion in a 0.25 µm gate length GaN HEMT",

abstract = "Current dispersion due to acceptor-type defects acting as electron traps are studied using 2D TCAD transient simulations. High and low drain pulse voltages are applied to study a dynamic picture of trapping and de-trapping of electrons using Drift Diffusion and Hydrodynamic transport models. In addition, Schottky electron tunnelling is employed to transient simulations in the presence of different densities of traps in the barrier to investigate how tunnelling affects the drain current at off-state.",

keywords = "Gallium nitride, Electron traps, HEMTs, Tunneling, Logic gates, Aluminum gallium nitride",

author = "Soroush Faramehr and Petar Igic and Karol Kalna",

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N1 - © 2013 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. Copyright © and Moral Rights are retained by the author(s) and/ or other copyright owners. A copy can be downloaded for personal non-commercial research or study, without prior permission or charge. This item cannot be reproduced or quoted extensively from without first obtaining permission in writing from the copyright holder(s). The content must not be changed in any way or sold commercially in any format or medium without the formal permission of the copyright holders.

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N2 - Current dispersion due to acceptor-type defects acting as electron traps are studied using 2D TCAD transient simulations. High and low drain pulse voltages are applied to study a dynamic picture of trapping and de-trapping of electrons using Drift Diffusion and Hydrodynamic transport models. In addition, Schottky electron tunnelling is employed to transient simulations in the presence of different densities of traps in the barrier to investigate how tunnelling affects the drain current at off-state.

AB - Current dispersion due to acceptor-type defects acting as electron traps are studied using 2D TCAD transient simulations. High and low drain pulse voltages are applied to study a dynamic picture of trapping and de-trapping of electrons using Drift Diffusion and Hydrodynamic transport models. In addition, Schottky electron tunnelling is employed to transient simulations in the presence of different densities of traps in the barrier to investigate how tunnelling affects the drain current at off-state.

KW - Gallium nitride

KW - Electron traps

KW - HEMTs

KW - Tunneling

KW - Logic gates

KW - Aluminum gallium nitride

U2 - 10.1109/ASDAM.2012.6418566

DO - 10.1109/ASDAM.2012.6418566

M3 - Conference proceeding

SN - 978-1-4673-1198-4

SN - 978-1-4673-1197-7

SP - 11

EP - 14

BT - The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems

PB - IEEE

T2 - The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems

Y2 - 11 November 2012 through 15 November 2012

ER -

TCAD modelling of current dispersion in a 0.25 µm gate length GaN HEMT

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Bibliographical note

Keywords

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