TCAD modelling of current dispersion in a 0.25 µm gate length GaN HEMT

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Abstract

Current dispersion due to acceptor-type defects acting as electron traps are studied using 2D TCAD transient simulations. High and low drain pulse voltages are applied to study a dynamic picture of trapping and de-trapping of electrons using Drift Diffusion and Hydrodynamic transport models. In addition, Schottky electron tunnelling is employed to transient simulations in the presence of different densities of traps in the barrier to investigate how tunnelling affects the drain current at off-state.
Original languageEnglish
Title of host publicationThe Ninth International Conference on Advanced Semiconductor Devices and Mircosystems
PublisherIEEE
Pages11-14
Number of pages4
ISBN (Print)978-1-4673-1198-4, 978-1-4673-1197-7
DOIs
Publication statusPublished - 24 Jan 2013
Externally publishedYes
EventThe Ninth International Conference on Advanced Semiconductor Devices and Mircosystems - Smolenice, Slovakia
Duration: 11 Nov 201215 Nov 2012

Conference

ConferenceThe Ninth International Conference on Advanced Semiconductor Devices and Mircosystems
CountrySlovakia
CitySmolenice
Period11/11/1215/11/12

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Keywords

  • Gallium nitride
  • Electron traps
  • HEMTs
  • Tunneling
  • Logic gates
  • Aluminum gallium nitride

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  • Cite this

    Faramehr, S., Igic, P., & Kalna, K. (2013). TCAD modelling of current dispersion in a 0.25 µm gate length GaN HEMT. In The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems (pp. 11-14). IEEE. https://doi.org/10.1109/ASDAM.2012.6418566