TCAD device modelling and simulation of wide bandgap power semiconductors

Neo Lophitis, Anastasios Arvanitopoulos, Samuel Perkins, Marina Antoniou

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Abstract

Technology Computer Aided Design (TCAD) is essential for devices technology development, including wide bandgap power semiconductors. However. most TCAD tools were originally developed for silicon and their performance and accuracy for wide band gap semiconductors is contentious. This chapter will deal with TCAD device modelling of wide band gap power semiconductors. In particular, modelling and simulating 3C- and 4H- Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond devices are examined. The challenges associated with modelling the material and device physics are analysed in detail. It also includes convergence issues and accuracy of predicted performance. Modelling and simulating defects, traps and the effect of these traps on the characteristics are also discussed.
Keywords: TCAD, modelling and simulation, Silicon Carbide, Gallium Nitride, Diamond, Physics modelling, material parameters.
Original languageEnglish
Title of host publicationDisruptive Wide Bandgap Semiconductors, Related Technologies, and their Applications
EditorsYogesh Kumar Sharma
PublisherInTech – Open Access Publisher
Chapter2
Pages17-44
Number of pages28
ISBN (Electronic)978-953-51-6108-0
DOIs
Publication statusPublished - 12 Sep 2018

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    Lophitis, N., Arvanitopoulos, A., Perkins, S., & Antoniou, M. (2018). TCAD device modelling and simulation of wide bandgap power semiconductors. In Y. Kumar Sharma (Ed.), Disruptive Wide Bandgap Semiconductors, Related Technologies, and their Applications (pp. 17-44). InTech – Open Access Publisher. https://doi.org/10.5772/intechopen.76062