TCAD device modelling and simulation of wide bandgap power semiconductors

Neo Lophitis; Anastasios Arvanitopoulos; Samuel Perkins; Marina Antoniou

doi:10.5772/intechopen.76062

TCAD device modelling and simulation of wide bandgap power semiconductors

Neo Lophitis, Anastasios Arvanitopoulos, Samuel Perkins, Marina Antoniou

University of Cambridge

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

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Abstract

Technology Computer Aided Design (TCAD) is essential for devices technology development, including wide bandgap power semiconductors. However. most TCAD tools were originally developed for silicon and their performance and accuracy for wide band gap semiconductors is contentious. This chapter will deal with TCAD device modelling of wide band gap power semiconductors. In particular, modelling and simulating 3C- and 4H- Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond devices are examined. The challenges associated with modelling the material and device physics are analysed in detail. It also includes convergence issues and accuracy of predicted performance. Modelling and simulating defects, traps and the effect of these traps on the characteristics are also discussed.
Keywords: TCAD, modelling and simulation, Silicon Carbide, Gallium Nitride, Diamond, Physics modelling, material parameters.

Original language	English
Title of host publication	Disruptive Wide Bandgap Semiconductors, Related Technologies, and their Applications
Editors	Yogesh Kumar Sharma
Publisher	InTech – Open Access Publisher
Chapter	2
Pages	17-44
Number of pages	28
ISBN (Electronic)	978-953-51-6108-0
DOIs	https://doi.org/10.5772/intechopen.76062
Publication status	Published - 12 Sept 2018

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TCAD device modelling and simulation of wide bandgap power semiconductors. / Lophitis, Neo; Arvanitopoulos, Anastasios; Perkins, Samuel et al.
Disruptive Wide Bandgap Semiconductors, Related Technologies, and their Applications. ed. / Yogesh Kumar Sharma. InTech – Open Access Publisher, 2018. p. 17-44.

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

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TCAD device modelling and simulation of wide bandgap power semiconductors

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