TCAD device modelling and simulation of wide bandgap power semiconductors

Neo Lophitis, Anastasios Arvanitopoulos, Samuel Perkins, Marina Antoniou

Research output: Research - peer-reviewChapter

Abstract

Technology Computer Aided Design (TCAD) is essential for devices technology development, including wide bandgap power semiconductors. However. most TCAD tools were originally developed for silicon and their performance and accuracy for wide band gap semiconductors is contentious. This chapter will deal with TCAD device modelling of wide band gap power semiconductors. In particular, modelling and simulating 3C- and 4H- Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond devices are examined. The challenges associated with modelling the material and device physics are analysed in detail. It also includes convergence issues and accuracy of predicted performance. Modelling and simulating defects, traps and the effect of these traps on the characteristics are also discussed.
Keywords: TCAD, modelling and simulation, Silicon Carbide, Gallium Nitride, Diamond, Physics modelling, material parameters.
LanguageEnglish
Title of host publicationDisruptive Wide Bandgap Semiconductors, Related Technologies, and their Applications
EditorsYogesh Kumar Sharma
PublisherInTech – Open Access Publisher
Pages17-44
Number of pages28
ISBN (Electronic)978-953-51-6108-0
DOIs
StatePublished - 12 Sep 2018

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computer aided design
gallium nitrides
silicon carbides
simulation
diamonds
traps
broadband
physics
defects
silicon

Cite this

Lophitis, N., Arvanitopoulos, A., Perkins, S., & Antoniou, M. (2018). TCAD device modelling and simulation of wide bandgap power semiconductors. In Y. Kumar Sharma (Ed.), Disruptive Wide Bandgap Semiconductors, Related Technologies, and their Applications (pp. 17-44). InTech – Open Access Publisher. DOI: 10.5772/intechopen.76062

TCAD device modelling and simulation of wide bandgap power semiconductors. / Lophitis, Neo; Arvanitopoulos, Anastasios; Perkins, Samuel; Antoniou, Marina.

Disruptive Wide Bandgap Semiconductors, Related Technologies, and their Applications. ed. / Yogesh Kumar Sharma. InTech – Open Access Publisher, 2018. p. 17-44.

Research output: Research - peer-reviewChapter

Lophitis, N, Arvanitopoulos, A, Perkins, S & Antoniou, M 2018, TCAD device modelling and simulation of wide bandgap power semiconductors. in Y Kumar Sharma (ed.), Disruptive Wide Bandgap Semiconductors, Related Technologies, and their Applications. InTech – Open Access Publisher, pp. 17-44. DOI: 10.5772/intechopen.76062
Lophitis N, Arvanitopoulos A, Perkins S, Antoniou M. TCAD device modelling and simulation of wide bandgap power semiconductors. In Kumar Sharma Y, editor, Disruptive Wide Bandgap Semiconductors, Related Technologies, and their Applications. InTech – Open Access Publisher. 2018. p. 17-44. Available from, DOI: 10.5772/intechopen.76062
Lophitis, Neo ; Arvanitopoulos, Anastasios ; Perkins, Samuel ; Antoniou, Marina. / TCAD device modelling and simulation of wide bandgap power semiconductors. Disruptive Wide Bandgap Semiconductors, Related Technologies, and their Applications. editor / Yogesh Kumar Sharma. InTech – Open Access Publisher, 2018. pp. 17-44
@inbook{e07a5665d337423795e75f815230a9b5,
title = "TCAD device modelling and simulation of wide bandgap power semiconductors",
abstract = "Technology Computer Aided Design (TCAD) is essential for devices technology development, including wide bandgap power semiconductors. However. most TCAD tools were originally developed for silicon and their performance and accuracy for wide band gap semiconductors is contentious. This chapter will deal with TCAD device modelling of wide band gap power semiconductors. In particular, modelling and simulating 3C- and 4H- Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond devices are examined. The challenges associated with modelling the material and device physics are analysed in detail. It also includes convergence issues and accuracy of predicted performance. Modelling and simulating defects, traps and the effect of these traps on the characteristics are also discussed. Keywords: TCAD, modelling and simulation, Silicon Carbide, Gallium Nitride, Diamond, Physics modelling, material parameters.",
author = "Neo Lophitis and Anastasios Arvanitopoulos and Samuel Perkins and Marina Antoniou",
year = "2018",
month = "9",
doi = "10.5772/intechopen.76062",
pages = "17--44",
editor = "{Kumar Sharma}, Yogesh",
booktitle = "Disruptive Wide Bandgap Semiconductors, Related Technologies, and their Applications",
publisher = "InTech – Open Access Publisher",

}

TY - CHAP

T1 - TCAD device modelling and simulation of wide bandgap power semiconductors

AU - Lophitis,Neo

AU - Arvanitopoulos,Anastasios

AU - Perkins,Samuel

AU - Antoniou,Marina

PY - 2018/9/12

Y1 - 2018/9/12

N2 - Technology Computer Aided Design (TCAD) is essential for devices technology development, including wide bandgap power semiconductors. However. most TCAD tools were originally developed for silicon and their performance and accuracy for wide band gap semiconductors is contentious. This chapter will deal with TCAD device modelling of wide band gap power semiconductors. In particular, modelling and simulating 3C- and 4H- Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond devices are examined. The challenges associated with modelling the material and device physics are analysed in detail. It also includes convergence issues and accuracy of predicted performance. Modelling and simulating defects, traps and the effect of these traps on the characteristics are also discussed. Keywords: TCAD, modelling and simulation, Silicon Carbide, Gallium Nitride, Diamond, Physics modelling, material parameters.

AB - Technology Computer Aided Design (TCAD) is essential for devices technology development, including wide bandgap power semiconductors. However. most TCAD tools were originally developed for silicon and their performance and accuracy for wide band gap semiconductors is contentious. This chapter will deal with TCAD device modelling of wide band gap power semiconductors. In particular, modelling and simulating 3C- and 4H- Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond devices are examined. The challenges associated with modelling the material and device physics are analysed in detail. It also includes convergence issues and accuracy of predicted performance. Modelling and simulating defects, traps and the effect of these traps on the characteristics are also discussed. Keywords: TCAD, modelling and simulation, Silicon Carbide, Gallium Nitride, Diamond, Physics modelling, material parameters.

U2 - 10.5772/intechopen.76062

DO - 10.5772/intechopen.76062

M3 - Chapter

SP - 17

EP - 44

BT - Disruptive Wide Bandgap Semiconductors, Related Technologies, and their Applications

PB - InTech – Open Access Publisher

ER -