TCAD device modelling and simulation of wide bandgap power semiconductors

Neo Lophitis, Anastasios Arvanitopoulos, Samuel Perkins, Marina Antoniou

    Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

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    Technology Computer Aided Design (TCAD) is essential for devices technology development, including wide bandgap power semiconductors. However. most TCAD tools were originally developed for silicon and their performance and accuracy for wide band gap semiconductors is contentious. This chapter will deal with TCAD device modelling of wide band gap power semiconductors. In particular, modelling and simulating 3C- and 4H- Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond devices are examined. The challenges associated with modelling the material and device physics are analysed in detail. It also includes convergence issues and accuracy of predicted performance. Modelling and simulating defects, traps and the effect of these traps on the characteristics are also discussed.
    Keywords: TCAD, modelling and simulation, Silicon Carbide, Gallium Nitride, Diamond, Physics modelling, material parameters.
    Original languageEnglish
    Title of host publicationDisruptive Wide Bandgap Semiconductors, Related Technologies, and their Applications
    EditorsYogesh Kumar Sharma
    PublisherInTech – Open Access Publisher
    Number of pages28
    ISBN (Electronic)978-953-51-6108-0
    Publication statusPublished - 12 Sept 2018


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