Abstract
In this work ultrathin strained silicon layers grown on relaxed Si0.9 Ge0.1 substrates were oxidized under high thermal budget conditions in N2 O ambient at 800 °C. The results indicate that the density of interface traps depends on the extent of the oxidation process. If the strained Si layer is totally consumed the density of interface traps reduces to almost half the value as compared to the case where a part of the strained Si layer still remains. The results indicate that the two existing interfaces of the strained Si layer, the SiO2 /strained-Si and the strained- Si/ Si0.9 Ge0.1, contribute in parallel to the measured interface trap density. In addition, the buried strained- Si/ Si0.9 Ge0.1 interface constitutes a major source of the observed high density of interface traps.
| Original language | English |
|---|---|
| Article number | 114503 |
| Journal | Journal of Applied Physics |
| Volume | 105 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2009 |
| Externally published | Yes |
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Keywords
- High density
- High thermal
- Interface trap density
- Interface traps
- Interfacial defect
- Oxidation process
- Strained Silicon
- Strained-Si
- Ultra-thin
ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Study of interfacial defects induced during the oxidation of ultrathin strained silicon layers. / Ioannou-Sougleridis, V.; Kelaidis, N.; Tsamis, C.; Skarlatos, D.; Krontiras, C. A.; Georga, S. N.; Komninou, Ph; Kellerman, B.; Seacrist, M.
In: Journal of Applied Physics, Vol. 105, No. 11, 114503, 2009.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Study of interfacial defects induced during the oxidation of ultrathin strained silicon layers
AU - Ioannou-Sougleridis, V.
AU - Kelaidis, N.
AU - Tsamis, C.
AU - Skarlatos, D.
AU - Krontiras, C. A.
AU - Georga, S. N.
AU - Komninou, Ph
AU - Kellerman, B.
AU - Seacrist, M.
PY - 2009
Y1 - 2009
N2 - In this work ultrathin strained silicon layers grown on relaxed Si0.9 Ge0.1 substrates were oxidized under high thermal budget conditions in N2 O ambient at 800 °C. The results indicate that the density of interface traps depends on the extent of the oxidation process. If the strained Si layer is totally consumed the density of interface traps reduces to almost half the value as compared to the case where a part of the strained Si layer still remains. The results indicate that the two existing interfaces of the strained Si layer, the SiO2 /strained-Si and the strained- Si/ Si0.9 Ge0.1, contribute in parallel to the measured interface trap density. In addition, the buried strained- Si/ Si0.9 Ge0.1 interface constitutes a major source of the observed high density of interface traps.
AB - In this work ultrathin strained silicon layers grown on relaxed Si0.9 Ge0.1 substrates were oxidized under high thermal budget conditions in N2 O ambient at 800 °C. The results indicate that the density of interface traps depends on the extent of the oxidation process. If the strained Si layer is totally consumed the density of interface traps reduces to almost half the value as compared to the case where a part of the strained Si layer still remains. The results indicate that the two existing interfaces of the strained Si layer, the SiO2 /strained-Si and the strained- Si/ Si0.9 Ge0.1, contribute in parallel to the measured interface trap density. In addition, the buried strained- Si/ Si0.9 Ge0.1 interface constitutes a major source of the observed high density of interface traps.
KW - High density
KW - High thermal
KW - Interface trap density
KW - Interface traps
KW - Interfacial defect
KW - Oxidation process
KW - Strained Silicon
KW - Strained-Si
KW - Ultra-thin
U2 - 10.1063/1.3137202
DO - 10.1063/1.3137202
M3 - Article
VL - 105
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 11
M1 - 114503
ER -