Study of interfacial defects induced during the oxidation of ultrathin strained silicon layers

V. Ioannou-Sougleridis, N. Kelaidis, C. Tsamis, D. Skarlatos, C. A. Krontiras, S. N. Georga, Ph Komninou, B. Kellerman, M. Seacrist

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this work ultrathin strained silicon layers grown on relaxed Si0.9 Ge0.1 substrates were oxidized under high thermal budget conditions in N2 O ambient at 800 °C. The results indicate that the density of interface traps depends on the extent of the oxidation process. If the strained Si layer is totally consumed the density of interface traps reduces to almost half the value as compared to the case where a part of the strained Si layer still remains. The results indicate that the two existing interfaces of the strained Si layer, the SiO2 /strained-Si and the strained- Si/ Si0.9 Ge0.1, contribute in parallel to the measured interface trap density. In addition, the buried strained- Si/ Si0.9 Ge0.1 interface constitutes a major source of the observed high density of interface traps.

Original languageEnglish
Article number114503
JournalJournal of Applied Physics
Volume105
Issue number11
DOIs
Publication statusPublished - 2009
Externally publishedYes

Keywords

  • High density
  • High thermal
  • Interface trap density
  • Interface traps
  • Interfacial defect
  • Oxidation process
  • Strained Silicon
  • Strained-Si
  • Ultra-thin

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Ioannou-Sougleridis, V., Kelaidis, N., Tsamis, C., Skarlatos, D., Krontiras, C. A., Georga, S. N., ... Seacrist, M. (2009). Study of interfacial defects induced during the oxidation of ultrathin strained silicon layers. Journal of Applied Physics, 105(11), [114503]. https://doi.org/10.1063/1.3137202