Study of 4H-SiC trench MOSFET structures

L. Chen, O. J. Guy, M. R. Jennings, P. Igic, S. P. Wilks, P. A. Mawby

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)


An investigation of the structures and design parameters of 4H-SiC trench inversion-channel MOSFETs using a two-dimensional (2D) numerical device simulation is presented. Material parameters have been adjusted appropriately for the 4H-SiC polytype and a systematic characterisation and optimization of a specific trench MOSFET with a 1.2 kV blocking voltage capability has been performed. Simulations have concentrated on optimizing the p-type doping concentration at the trench bottom, to keep the breakdown electric field in the oxide under its critical value. The trench depth was also examined and optimized to give a better on-state performance. For the MOSFET structure examined, a minimized on-state resistance of 53 mΩ cm2 was obtained.

Original languageEnglish
Pages (from-to)1081-1085
Number of pages5
JournalSolid-State Electronics
Issue number7
Publication statusPublished - 1 Jul 2005
Externally publishedYes


  • 4H-SiC
  • Breakdown
  • Electric field
  • On-state resistance
  • Trench MOSFET

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry


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