Study of 4H-SiC trench MOSFET structures

L. Chen; O. J. Guy; M. R. Jennings; P. Igic; S. P. Wilks; P. A. Mawby

doi:10.1016/j.sse.2005.05.003

Study of 4H-SiC trench MOSFET structures

L. Chen, O. J. Guy, M. R. Jennings, P. Igic, S. P. Wilks, P. A. Mawby

Swansea University

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

An investigation of the structures and design parameters of 4H-SiC trench inversion-channel MOSFETs using a two-dimensional (2D) numerical device simulation is presented. Material parameters have been adjusted appropriately for the 4H-SiC polytype and a systematic characterisation and optimization of a specific trench MOSFET with a 1.2 kV blocking voltage capability has been performed. Simulations have concentrated on optimizing the p-type doping concentration at the trench bottom, to keep the breakdown electric field in the oxide under its critical value. The trench depth was also examined and optimized to give a better on-state performance. For the MOSFET structure examined, a minimized on-state resistance of 53 mΩ cm² was obtained.

Original language	English
Pages (from-to)	1081-1085
Number of pages	5
Journal	Solid-State Electronics
Volume	49
Issue number	7
DOIs	https://doi.org/10.1016/j.sse.2005.05.003
Publication status	Published - 1 Jul 2005
Externally published	Yes

Keywords

4H-SiC
Breakdown
Electric field
On-state resistance
Trench MOSFET

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/j.sse.2005.05.003

Cite this

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title = "Study of 4H-SiC trench MOSFET structures",

abstract = "An investigation of the structures and design parameters of 4H-SiC trench inversion-channel MOSFETs using a two-dimensional (2D) numerical device simulation is presented. Material parameters have been adjusted appropriately for the 4H-SiC polytype and a systematic characterisation and optimization of a specific trench MOSFET with a 1.2 kV blocking voltage capability has been performed. Simulations have concentrated on optimizing the p-type doping concentration at the trench bottom, to keep the breakdown electric field in the oxide under its critical value. The trench depth was also examined and optimized to give a better on-state performance. For the MOSFET structure examined, a minimized on-state resistance of 53 mΩ cm2 was obtained.",

keywords = "4H-SiC, Breakdown, Electric field, On-state resistance, Trench MOSFET",

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T1 - Study of 4H-SiC trench MOSFET structures

AU - Chen, L.

AU - Guy, O. J.

AU - Jennings, M. R.

AU - Igic, P.

AU - Wilks, S. P.

AU - Mawby, P. A.

PY - 2005/7/1

Y1 - 2005/7/1

N2 - An investigation of the structures and design parameters of 4H-SiC trench inversion-channel MOSFETs using a two-dimensional (2D) numerical device simulation is presented. Material parameters have been adjusted appropriately for the 4H-SiC polytype and a systematic characterisation and optimization of a specific trench MOSFET with a 1.2 kV blocking voltage capability has been performed. Simulations have concentrated on optimizing the p-type doping concentration at the trench bottom, to keep the breakdown electric field in the oxide under its critical value. The trench depth was also examined and optimized to give a better on-state performance. For the MOSFET structure examined, a minimized on-state resistance of 53 mΩ cm2 was obtained.

AB - An investigation of the structures and design parameters of 4H-SiC trench inversion-channel MOSFETs using a two-dimensional (2D) numerical device simulation is presented. Material parameters have been adjusted appropriately for the 4H-SiC polytype and a systematic characterisation and optimization of a specific trench MOSFET with a 1.2 kV blocking voltage capability has been performed. Simulations have concentrated on optimizing the p-type doping concentration at the trench bottom, to keep the breakdown electric field in the oxide under its critical value. The trench depth was also examined and optimized to give a better on-state performance. For the MOSFET structure examined, a minimized on-state resistance of 53 mΩ cm2 was obtained.

KW - 4H-SiC

KW - Breakdown

KW - Electric field

KW - On-state resistance

KW - Trench MOSFET

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U2 - 10.1016/j.sse.2005.05.003

DO - 10.1016/j.sse.2005.05.003

M3 - Article

AN - SCOPUS:21444434220

SN - 0038-1101

VL - 49

SP - 1081

EP - 1085

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 7

ER -

Study of 4H-SiC trench MOSFET structures

Abstract

Keywords

ASJC Scopus subject areas

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