Strategies to suppress A-center formation in silicon and germanium from a mass action analysis viewpoint

A. Chroneos; C.A. Londos; E.N. Sgourou; R.V. Vovk

doi:10.1007/s10854-014-1739-z

Strategies to suppress A-center formation in silicon and germanium from a mass action analysis viewpoint

A. Chroneos, C.A. Londos, E.N. Sgourou, R.V. Vovk

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Abstract

We investigate the impact of tin (Sn) doping on the formation and the thermal stability of the vacancy-oxygen (VO or A-center) in the electron-irradiated Czochralski silicon (Si) and its conversion to the VO2 defects. Previous experimental studies are consistent with the viewpoint that Sn (and other oversized isovalent atoms) doping suppresses the formation of the A-center. The results are discussed in view of recent density functional theory calculations, whereas we employ mass action analysis to calculate the impact of isovalent dopants on the suppression of the A-center. We propose point defect engineering strategies to suppress the concentration of the deleterious A-centers in Si and in related materials such as germanium.

Original language	English
Pages (from-to)	1388-1392
Journal	Journal of Materials Science: Materials in Electronics
Volume	25
Issue number	3
DOIs	https://doi.org/10.1007/s10854-014-1739-z
Publication status	Published - Jan 2014

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The final publication is available at Springer via http://dx.doi.org/10.1007/s10854-014-1739-z

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title = "Strategies to suppress A-center formation in silicon and germanium from a mass action analysis viewpoint",

abstract = "We investigate the impact of tin (Sn) doping on the formation and the thermal stability of the vacancy-oxygen (VO or A-center) in the electron-irradiated Czochralski silicon (Si) and its conversion to the VO2 defects. Previous experimental studies are consistent with the viewpoint that Sn (and other oversized isovalent atoms) doping suppresses the formation of the A-center. The results are discussed in view of recent density functional theory calculations, whereas we employ mass action analysis to calculate the impact of isovalent dopants on the suppression of the A-center. We propose point defect engineering strategies to suppress the concentration of the deleterious A-centers in Si and in related materials such as germanium. ",

author = "A. Chroneos and C.A. Londos and E.N. Sgourou and R.V. Vovk",

note = "The final publication is available at Springer via http://dx.doi.org/10.1007/s10854-014-1739-z",

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T1 - Strategies to suppress A-center formation in silicon and germanium from a mass action analysis viewpoint

AU - Chroneos, A.

AU - Londos, C.A.

AU - Sgourou, E.N.

AU - Vovk, R.V.

N1 - The final publication is available at Springer via http://dx.doi.org/10.1007/s10854-014-1739-z

PY - 2014/1

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N2 - We investigate the impact of tin (Sn) doping on the formation and the thermal stability of the vacancy-oxygen (VO or A-center) in the electron-irradiated Czochralski silicon (Si) and its conversion to the VO2 defects. Previous experimental studies are consistent with the viewpoint that Sn (and other oversized isovalent atoms) doping suppresses the formation of the A-center. The results are discussed in view of recent density functional theory calculations, whereas we employ mass action analysis to calculate the impact of isovalent dopants on the suppression of the A-center. We propose point defect engineering strategies to suppress the concentration of the deleterious A-centers in Si and in related materials such as germanium.

AB - We investigate the impact of tin (Sn) doping on the formation and the thermal stability of the vacancy-oxygen (VO or A-center) in the electron-irradiated Czochralski silicon (Si) and its conversion to the VO2 defects. Previous experimental studies are consistent with the viewpoint that Sn (and other oversized isovalent atoms) doping suppresses the formation of the A-center. The results are discussed in view of recent density functional theory calculations, whereas we employ mass action analysis to calculate the impact of isovalent dopants on the suppression of the A-center. We propose point defect engineering strategies to suppress the concentration of the deleterious A-centers in Si and in related materials such as germanium.

U2 - 10.1007/s10854-014-1739-z

DO - 10.1007/s10854-014-1739-z

M3 - Article

SN - 0957-4522

SN - 1573-482X

VL - 25

SP - 1388

EP - 1392

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 3

ER -

Strategies to suppress A-center formation in silicon and germanium from a mass action analysis viewpoint

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