Strategies to suppress A-center formation in silicon and germanium from a mass action analysis viewpoint

A. Chroneos, C.A. Londos, E.N. Sgourou, R.V. Vovk

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    Abstract

    We investigate the impact of tin (Sn) doping on the formation and the thermal stability of the vacancy-oxygen (VO or A-center) in the electron-irradiated Czochralski silicon (Si) and its conversion to the VO2 defects. Previous experimental studies are consistent with the viewpoint that Sn (and other oversized isovalent atoms) doping suppresses the formation of the A-center. The results are discussed in view of recent density functional theory calculations, whereas we employ mass action analysis to calculate the impact of isovalent dopants on the suppression of the A-center. We propose point defect engineering strategies to suppress the concentration of the deleterious A-centers in Si and in related materials such as germanium.
    Original languageEnglish
    Pages (from-to)1388-1392
    JournalJournal of Materials Science: Materials in Electronics
    Volume25
    Issue number3
    DOIs
    Publication statusPublished - Jan 2014

    Bibliographical note

    The final publication is available at Springer via http://dx.doi.org/10.1007/s10854-014-1739-z

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