Strategies to suppress A-center formation in silicon and germanium from a mass action analysis viewpoint

A. Chroneos, C.A. Londos, E.N. Sgourou, R.V. Vovk

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Abstract

We investigate the impact of tin (Sn) doping on the formation and the thermal stability of the vacancy-oxygen (VO or A-center) in the electron-irradiated Czochralski silicon (Si) and its conversion to the VO2 defects. Previous experimental studies are consistent with the viewpoint that Sn (and other oversized isovalent atoms) doping suppresses the formation of the A-center. The results are discussed in view of recent density functional theory calculations, whereas we employ mass action analysis to calculate the impact of isovalent dopants on the suppression of the A-center. We propose point defect engineering strategies to suppress the concentration of the deleterious A-centers in Si and in related materials such as germanium.
Original languageEnglish
Pages (from-to)1388-1392
JournalJournal of Materials Science: Materials in Electronics
Volume25
Issue number3
DOIs
Publication statusPublished - Jan 2014

Bibliographical note

The final publication is available at Springer via http://dx.doi.org/10.1007/s10854-014-1739-z

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