SPICE modeling of PT IGBT thermal behavior

N. Jankovic; P. Igic

doi:10.1049/ic:20080205

SPICE modeling of PT IGBT thermal behavior

N. Jankovic, P. Igic

School of Mechanical, Aerospace and Automotive Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding

1 Citation (Scopus)

Abstract

An electro-thermal model of Punch-Trough (PT) IGBT having a small set of temperature related fitting parameters was developed and implemented in SPICE. The model accuracy in predicting thermal behavior of such power device was validated by DC and transient measurements of a fabricated 200-A 850-V PT IGBT at 25°C, 75°C and 125°C.

Original language	English
Title of host publication	9th International Seminar on Power Semiconductors, ISPS 2008
Publisher	Institution of Engineering and Technology
Pages	273-277
Number of pages	5
Edition	2
ISBN (Print)	9788001041390
DOIs	https://doi.org/10.1049/ic:20080205
Publication status	Published - 1 Dec 2008
Event	9th International Seminar on Power Semiconductors, ISPS 2008 - Prague, Czech Republic Duration: 27 Aug 2008 → 29 Aug 2008

Publication series

Name	IET Seminar Digest
Number	2
Volume	2008

Conference

Conference	9th International Seminar on Power Semiconductors, ISPS 2008
Country	Czech Republic
City	Prague
Period	27/08/08 → 29/08/08

Fingerprint

Keywords

Modelling
PT IGBT
SPICE
Thermal

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Jankovic, N., & Igic, P. (2008). SPICE modeling of PT IGBT thermal behavior. In 9th International Seminar on Power Semiconductors, ISPS 2008 (2 ed., pp. 273-277). (IET Seminar Digest; Vol. 2008, No. 2). Institution of Engineering and Technology. https://doi.org/10.1049/ic:20080205

@inproceedings{74521306b6ea4bb2b4c35a8efaa3ffa6,

title = "SPICE modeling of PT IGBT thermal behavior",

abstract = "An electro-thermal model of Punch-Trough (PT) IGBT having a small set of temperature related fitting parameters was developed and implemented in SPICE. The model accuracy in predicting thermal behavior of such power device was validated by DC and transient measurements of a fabricated 200-A 850-V PT IGBT at 25°C, 75°C and 125°C.",

keywords = "Modelling, PT IGBT, SPICE, Thermal",

author = "N. Jankovic and P. Igic",

year = "2008",

month = "12",

day = "1",

doi = "10.1049/ic:20080205",

language = "English",

isbn = "9788001041390",

series = "IET Seminar Digest",

publisher = "Institution of Engineering and Technology",

number = "2",

pages = "273--277",

booktitle = "9th International Seminar on Power Semiconductors, ISPS 2008",

address = "United Kingdom",

edition = "2",

}

TY - GEN

T1 - SPICE modeling of PT IGBT thermal behavior

AU - Jankovic, N.

AU - Igic, P.

PY - 2008/12/1

Y1 - 2008/12/1

N2 - An electro-thermal model of Punch-Trough (PT) IGBT having a small set of temperature related fitting parameters was developed and implemented in SPICE. The model accuracy in predicting thermal behavior of such power device was validated by DC and transient measurements of a fabricated 200-A 850-V PT IGBT at 25°C, 75°C and 125°C.

AB - An electro-thermal model of Punch-Trough (PT) IGBT having a small set of temperature related fitting parameters was developed and implemented in SPICE. The model accuracy in predicting thermal behavior of such power device was validated by DC and transient measurements of a fabricated 200-A 850-V PT IGBT at 25°C, 75°C and 125°C.

KW - Modelling

KW - PT IGBT

KW - SPICE

KW - Thermal

UR - http://www.scopus.com/inward/record.url?scp=67650544406&partnerID=8YFLogxK

U2 - 10.1049/ic:20080205

DO - 10.1049/ic:20080205

M3 - Conference proceeding

SN - 9788001041390

T3 - IET Seminar Digest

SP - 273

EP - 277

BT - 9th International Seminar on Power Semiconductors, ISPS 2008

PB - Institution of Engineering and Technology

ER -

Access to Document

10.1049/ic:20080205

Link to publication in Scopus