SPICE modeling of PT IGBT thermal behavior

N. Jankovic, P. Igic

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

1 Citation (Scopus)

Abstract

An electro-thermal model of Punch-Trough (PT) IGBT having a small set of temperature related fitting parameters was developed and implemented in SPICE. The model accuracy in predicting thermal behavior of such power device was validated by DC and transient measurements of a fabricated 200-A 850-V PT IGBT at 25°C, 75°C and 125°C.

Original languageEnglish
Title of host publication9th International Seminar on Power Semiconductors, ISPS 2008
PublisherInstitution of Engineering and Technology
Pages273-277
Number of pages5
Edition2
ISBN (Print)9788001041390
DOIs
Publication statusPublished - 1 Dec 2008
Event9th International Seminar on Power Semiconductors, ISPS 2008 - Prague, Czech Republic
Duration: 27 Aug 200829 Aug 2008

Publication series

NameIET Seminar Digest
Number2
Volume2008

Conference

Conference9th International Seminar on Power Semiconductors, ISPS 2008
CountryCzech Republic
CityPrague
Period27/08/0829/08/08

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Keywords

  • Modelling
  • PT IGBT
  • SPICE
  • Thermal

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Jankovic, N., & Igic, P. (2008). SPICE modeling of PT IGBT thermal behavior. In 9th International Seminar on Power Semiconductors, ISPS 2008 (2 ed., pp. 273-277). (IET Seminar Digest; Vol. 2008, No. 2). Institution of Engineering and Technology. https://doi.org/10.1049/ic:20080205