Simulation of the electrical characteristics of MOS capacitors on strained-silicon substrates

N. Kelaidis, D. Skarlatos, C. Tsamis

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


In this work, we analyze the electrical characteristics of MOS capacitors fabricated on strained silicon substrates using the commercial software Taurus/Synopsis. The effect of various parameters such as Germanium concentration in the Si1-xGex virtual substrate, thickness of the strained-Silicon layer, oxide thickness, fixed charge and interface trapped charge on capacitance - voltage characteristics is examined. Experimental data are compared with simulation results. A strong influence of the s-Si/SiGe heterostructure and its proximity to the s-Si/SiO2 on the electrical characteristics of the system exists. Oxide charge inserted into simulation in order to fit experimental data shows an increase of charge with decreasing s-Si thickness. The effect of interface traps on simulated C-V characteristics is identical when traps are situated in the s-Si/SiO2 or the s-Si/SiGe interface. When increasing the thermal budget by increasing the post oxidation annealing time, the decrease of the hump phenomenon on the C-V curves can be attributed to the Germanium diffusion, according to simulation.

Original languageEnglish
Pages (from-to)3647-3650
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number12
Publication statusPublished - 2008
Externally publishedYes


  • Capacitance voltages
  • Commercial softwares
  • Electrical characteristics
  • Experimental datums
  • Fixed charges
  • Germanium concentrations
  • Heterostructure
  • interface traps
  • Oxide charges
  • Strained silicons
  • Trapped charges
  • V curves
  • Virtual substrates

ASJC Scopus subject areas

  • Condensed Matter Physics


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