Simulation of Solo GaN IGBTs

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    3 Citations (Scopus)


    This paper reports simulation of punch-through gallium nitride (GaN) insulated gate bipolar transistors (IGBTs) with different drift layer thicknesses of t=12 μm and t=17 μm delivering breakdown voltages of V BD =600V and V BD =700V, respectively. The simulated devices are enhancement-mode with the threshold voltage of +3.5V. The leakage current in proposed devices are in the range of 10 -9 A/μm. Using GaN, a significant improvement in blocking capability of IGBTs for a given epithickness is observed. The GaN IGBTs have been simulated and analyzed by Silvaco atlas toolbox.
    Original languageEnglish
    Title of host publicationIEEE 30th International Conference on Microelectronics (MIEL)
    Number of pages4
    ISBN (Electronic)978-1-5386-2563-7
    ISBN (Print)978-1-5386-2561-3, 978-1-5386-2564-4
    Publication statusPublished - 14 Dec 2017
    Event2017 IEEE 30th International Conference on Microelectronics - Nis, Serbia
    Duration: 9 Oct 201711 Oct 2017
    Conference number: 30th


    Conference2017 IEEE 30th International Conference on Microelectronics
    Abbreviated titleMIEL


    • Gallium nitride
    • Insulated gate bipolar transistors
    • Logic gates
    • HEMTs
    • MODFETs
    • Electric fields


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