Abstract
This paper reports simulation of punch-through gallium nitride (GaN) insulated gate bipolar transistors (IGBTs) with different drift layer thicknesses of t=12 μm and t=17 μm delivering breakdown voltages of V BD =600V and V BD =700V, respectively. The simulated devices are enhancement-mode with the threshold voltage of +3.5V. The leakage current in proposed devices are in the range of 10 -9 A/μm. Using GaN, a significant improvement in blocking capability of IGBTs for a given epithickness is observed. The GaN IGBTs have been simulated and analyzed by Silvaco atlas toolbox.
| Original language | English |
|---|---|
| Title of host publication | IEEE 30th International Conference on Microelectronics (MIEL) |
| Publisher | IEEE |
| Pages | 75-78 |
| Number of pages | 4 |
| ISBN (Electronic) | 978-1-5386-2563-7 |
| ISBN (Print) | 978-1-5386-2561-3, 978-1-5386-2564-4 |
| Publication status | Published - 14 Dec 2017 |
| Event | 2017 IEEE 30th International Conference on Microelectronics - Nis, Serbia Duration: 9 Oct 2017 → 11 Oct 2017 Conference number: 30th |
Conference
| Conference | 2017 IEEE 30th International Conference on Microelectronics |
|---|---|
| Abbreviated title | MIEL |
| Country/Territory | Serbia |
| City | Nis |
| Period | 9/10/17 → 11/10/17 |
Keywords
- Gallium nitride
- Insulated gate bipolar transistors
- Logic gates
- HEMTs
- MODFETs
- Electric fields