Simulation of Solo GaN IGBTs

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

1 Citation (Scopus)

Abstract

This paper reports simulation of punch-through gallium nitride (GaN) insulated gate bipolar transistors (IGBTs) with different drift layer thicknesses of t=12 μm and t=17 μm delivering breakdown voltages of V BD =600V and V BD =700V, respectively. The simulated devices are enhancement-mode with the threshold voltage of +3.5V. The leakage current in proposed devices are in the range of 10 -9 A/μm. Using GaN, a significant improvement in blocking capability of IGBTs for a given epithickness is observed. The GaN IGBTs have been simulated and analyzed by Silvaco atlas toolbox.
Original languageEnglish
Title of host publicationIEEE 30th International Conference on Microelectronics (MIEL)
PublisherIEEE
Pages75-78
Number of pages4
ISBN (Electronic)978-1-5386-2563-7
ISBN (Print)978-1-5386-2561-3, 978-1-5386-2564-4
Publication statusPublished - 14 Dec 2017
Event2017 IEEE 30th International Conference on Microelectronics - Nis, Serbia
Duration: 9 Oct 201711 Oct 2017
Conference number: 30th

Conference

Conference2017 IEEE 30th International Conference on Microelectronics
Abbreviated titleMIEL
CountrySerbia
CityNis
Period9/10/1711/10/17

Keywords

  • Gallium nitride
  • Insulated gate bipolar transistors
  • Logic gates
  • HEMTs
  • MODFETs
  • Electric fields

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  • Cite this

    Faramehr, S., & Igic, P. (2017). Simulation of Solo GaN IGBTs. In IEEE 30th International Conference on Microelectronics (MIEL) (pp. 75-78). IEEE.