Silicon carbide Schottky diodes and MOSFETs: Solutions to performance problems

Owen J. Guy, Michal Lodzinski, Ambroise Castaing, P. M. Igic, Amador Perez-Tomas, Michael R. Jennings, Philip A. Mawby

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

12 Citations (Scopus)

Abstract

Silicon carbide has long been hailed as the successor to silicon in many power electronics applications. Its superior electrical and thermal properties have delivered devices that operate at higher voltages, higher temperatures and with lower on-resistances than silicon devices. However, SiC Schottky diodes are still the only devices commercially available today. Though SiC Schottkys are now being used with silicon IGBTs in 'hybrid' inverter modules, the real advantages will be seen when silicon switching devices can be replaced by SiC. This paper describes the current state of SiC diode and MOSFET technology, discussing possible solutions to making these devices commercially viable.

Original languageEnglish
Title of host publication13th International Power Electronics and Motion Control Conference, EPE-PEMC 2008
PublisherIEEE
Pages2464-2471
Number of pages8
ISBN (Print)9781424417421
DOIs
Publication statusPublished - 26 Nov 2008
Externally publishedYes
Event2008 13th International Power Electronics and Motion Control Conference, EPE-PEMC 2008 - Poznan, Poland
Duration: 1 Sep 20083 Sep 2008

Publication series

Name2008 13th International Power Electronics and Motion Control Conference, EPE-PEMC 2008

Conference

Conference2008 13th International Power Electronics and Motion Control Conference, EPE-PEMC 2008
CountryPoland
CityPoznan
Period1/09/083/09/08

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Keywords

  • High temperature electronics
  • MOSFET
  • New switching devices
  • Power semiconductor device
  • Silicon carbide

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Guy, O. J., Lodzinski, M., Castaing, A., Igic, P. M., Perez-Tomas, A., Jennings, M. R., & Mawby, P. A. (2008). Silicon carbide Schottky diodes and MOSFETs: Solutions to performance problems. In 13th International Power Electronics and Motion Control Conference, EPE-PEMC 2008 (pp. 2464-2471). [4635633] (2008 13th International Power Electronics and Motion Control Conference, EPE-PEMC 2008). IEEE. https://doi.org/10.1109/EPEPEMC.2008.4635633