@inproceedings{522b0efdfa6c465ea08e0fa9b1e29b59,
title = "Silicon carbide Schottky diodes and MOSFETs: Solutions to performance problems",
abstract = "Silicon carbide has long been hailed as the successor to silicon in many power electronics applications. Its superior electrical and thermal properties have delivered devices that operate at higher voltages, higher temperatures and with lower on-resistances than silicon devices. However, SiC Schottky diodes are still the only devices commercially available today. Though SiC Schottkys are now being used with silicon IGBTs in 'hybrid' inverter modules, the real advantages will be seen when silicon switching devices can be replaced by SiC. This paper describes the current state of SiC diode and MOSFET technology, discussing possible solutions to making these devices commercially viable.",
keywords = "High temperature electronics, MOSFET, New switching devices, Power semiconductor device, Silicon carbide",
author = "Guy, {Owen J.} and Michal Lodzinski and Ambroise Castaing and Igic, {P. M.} and Amador Perez-Tomas and Jennings, {Michael R.} and Mawby, {Philip A.}",
year = "2008",
month = nov,
day = "26",
doi = "10.1109/EPEPEMC.2008.4635633",
language = "English",
isbn = "9781424417421",
series = "2008 13th International Power Electronics and Motion Control Conference, EPE-PEMC 2008",
publisher = "IEEE",
pages = "2464--2471",
booktitle = "13th International Power Electronics and Motion Control Conference, EPE-PEMC 2008",
address = "United States",
note = "2008 13th International Power Electronics and Motion Control Conference, EPE-PEMC 2008 ; Conference date: 01-09-2008 Through 03-09-2008",
}