@inproceedings{133034c80fdc4ea580a76194d366d530,
title = "SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions",
abstract = "SiC and GaN power transistors switching energy are compared in this paper. In order to compare switching energy Esw of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses change when device maximal blocking voltage reduces by half. After that, Esw of a 650V GaN-HEMT is measured in hard switching condition and is compared with that of a 1200V SiC-MOSFET and a 650V SiC-MOSFET with the same current rating, in which it is shown that Esw of a GaN-HEMT is smaller than a 1200V SiC-MOSFET, which is smaller than 650V SiC-MOSFET. Following by that, in order to reduce device turn-ON switching energy, a zero voltage switching circuit is used to evaluate all the devices. Device output capacitance stored energy Eoss are measured and turn-OFF switching losses are obtained by subtracting Eoss, which shows that GaN-HEMT is sill better than SiC device in terms of switching losses and 1200V SiC-MOSFET has smaller switching losses than 650V SiC-MOSFET.",
keywords = "GaN-HEMT, hard switching, SiC-MOSFET, soft switching, Switching energy, Wide bandgap power semiconductor device",
author = "Ke Li and Paul Evans and Mark Johnson",
year = "2016",
month = dec,
day = "29",
doi = "10.1109/WiPDA.2016.7799922",
language = "English",
series = "WiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "123--128",
booktitle = "WiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications",
address = "United States",
note = "4th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2016 ; Conference date: 07-11-2016 Through 09-11-2016",
}