SiC and GaN power transistors switching energy evaluation in hard and soft switching conditions

Ke Li, Paul Evans, Mark Johnson

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

11 Citations (Scopus)

Abstract

SiC and GaN power transistors switching energy are compared in this paper. In order to compare switching energy Esw of the same power rating device, a theoretical analysis is given to compare SiC device conduction loss and switching losses change when device maximal blocking voltage reduces by half. After that, Esw of a 650V GaN-HEMT is measured in hard switching condition and is compared with that of a 1200V SiC-MOSFET and a 650V SiC-MOSFET with the same current rating, in which it is shown that Esw of a GaN-HEMT is smaller than a 1200V SiC-MOSFET, which is smaller than 650V SiC-MOSFET. Following by that, in order to reduce device turn-ON switching energy, a zero voltage switching circuit is used to evaluate all the devices. Device output capacitance stored energy Eoss are measured and turn-OFF switching losses are obtained by subtracting Eoss, which shows that GaN-HEMT is sill better than SiC device in terms of switching losses and 1200V SiC-MOSFET has smaller switching losses than 650V SiC-MOSFET.

Original languageEnglish
Title of host publicationWiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages123-128
Number of pages6
ISBN (Electronic)9781509015764
DOIs
Publication statusPublished - 29 Dec 2016
Externally publishedYes
Event4th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2016 - Fayetteville, United States
Duration: 7 Nov 20169 Nov 2016

Publication series

NameWiPDA 2016 - 4th IEEE Workshop on Wide Bandgap Power Devices and Applications

Workshop

Workshop4th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2016
CountryUnited States
CityFayetteville
Period7/11/169/11/16

Keywords

  • GaN-HEMT
  • hard switching
  • SiC-MOSFET
  • soft switching
  • Switching energy
  • Wide bandgap power semiconductor device

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Energy Engineering and Power Technology
  • Electronic, Optical and Magnetic Materials

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