The deposition of SnO2 using a 120 W high power diode laser (HPDL) on both fused silica and soda-lime-silica glass has been successfully demonstrated. Deposition on both glass substrates was carried out with laser power densities of 650-1600 W cm−2 and at rates of 420-1550 mm min−1. The thickness of the deposited layers was typically around 250 μm. The maximum theoretical coverage rate that it may be possible to achieve using the HPDL was calculated as being 3.72 m2 h−1. Owing to the wettability characteristics of Sn, it proved impossible to deposit the metal on either glass substrate. Evidence of solidified microstructures was observed, with the microstructures differing considerably across the same deposited track. These differences were attributed to variations in the solidification rate, R, and the thermal gradient, G. Adhesion of the SnO2 with the soda-lime-silica glass was found to be due to mechanical bonding. The adhesion of the SnO2 with the fused silica was seen to the result of a chemical bond arising from an interface region between the SnO2 and the fused silica glass substrate. This interface region was found to be comprised of mainly Si and rich with Sn3O4.
|Title of host publication||ICALEO 2000 Proceedings of the Laser Materials Processing Conference|
|Publication status||Published - 1 Oct 2000|
|Event||19th International Congress on Applications of Lasers and Electro-Optics - Dearborn, United States|
Duration: 2 Oct 2000 → 5 Oct 2000
|Conference||19th International Congress on Applications of Lasers and Electro-Optics|
|Abbreviated title||ICALEO 2000|
|Period||2/10/00 → 5/10/00|