Reverse Conducting Power Semiconductor Device

Neophytos Lophitis (Inventor), F. Udrea (Inventor), U. Vemulapati (Inventor), L. Nistor (Inventor), M. Arnold (Inventor), J. Vobecky (Inventor), M. Rahimo (Inventor)

    Research output: Patent

    53 Downloads (Pure)


    A RC power semiconductor is provided which comprises a plurality of diode cells and a plurality of GCT cells. Each GCT cell comprises a first cathode layer with at least three cathode layer regions, which are separated from each other by a base layer. In orthogonal projection onto a plane parallel to the first main side each one of the cathode layer regions is strip-shaped and a width (w, w′), wherein the diode cells alternate with the GCT cells in a lateral direction in at least a mixed part, wherein in each GCT cell, the width (w′) of each one of the two outer cathode layer regions next to a diode cell neighbouring to that GCT cell is less than the width (w) of any intermediate cathode layer region between the two outer cathode layer regions in that GCT cell.
    Original languageEnglish
    Patent numberUS2016284708A1
    IPCH01L 27/102,H01L 29/417,H01L 29/87
    Priority date23/03/15
    Filing date23/03/16
    Publication statusPublished - 29 Sept 2016


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