Reverse Conducting Power Semiconductor Device

Neophytos Lophitis; F. Udrea; U. Vemulapati; L. Nistor; M. Arnold; J. Vobecky; M. Rahimo

Reverse Conducting Power Semiconductor Device

Neophytos Lophitis (Inventor), F. Udrea (Inventor), U. Vemulapati (Inventor), L. Nistor (Inventor), M. Arnold (Inventor), J. Vobecky (Inventor), M. Rahimo (Inventor)

Research output: Patent

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Abstract

A RC power semiconductor is provided which comprises a plurality of diode cells and a plurality of GCT cells. Each GCT cell comprises a first cathode layer with at least three cathode layer regions, which are separated from each other by a base layer. In orthogonal projection onto a plane parallel to the first main side each one of the cathode layer regions is strip-shaped and a width (w, w′), wherein the diode cells alternate with the GCT cells in a lateral direction in at least a mixed part, wherein in each GCT cell, the width (w′) of each one of the two outer cathode layer regions next to a diode cell neighbouring to that GCT cell is less than the width (w) of any intermediate cathode layer region between the two outer cathode layer regions in that GCT cell.

Original language	English
Patent number	US2016284708A1
IPC	H01L 27/102,H01L 29/417,H01L 29/87
Priority date	23/03/15
Filing date	23/03/16
Publication status	Published - 29 Sept 2016

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title = "Reverse Conducting Power Semiconductor Device",

abstract = "A RC power semiconductor is provided which comprises a plurality of diode cells and a plurality of GCT cells. Each GCT cell comprises a first cathode layer with at least three cathode layer regions, which are separated from each other by a base layer. In orthogonal projection onto a plane parallel to the first main side each one of the cathode layer regions is strip-shaped and a width (w, w′), wherein the diode cells alternate with the GCT cells in a lateral direction in at least a mixed part, wherein in each GCT cell, the width (w′) of each one of the two outer cathode layer regions next to a diode cell neighbouring to that GCT cell is less than the width (w) of any intermediate cathode layer region between the two outer cathode layer regions in that GCT cell.",

author = "Neophytos Lophitis and F. Udrea and U. Vemulapati and L. Nistor and M. Arnold and J. Vobecky and M. Rahimo",

year = "2016",

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type = "Patent",

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T1 - Reverse Conducting Power Semiconductor Device

AU - Lophitis, Neophytos

AU - Udrea, F.

AU - Vemulapati, U.

AU - Nistor, L.

AU - Arnold, M.

AU - Vobecky, J.

AU - Rahimo, M.

PY - 2016/9/29

Y1 - 2016/9/29

N2 - A RC power semiconductor is provided which comprises a plurality of diode cells and a plurality of GCT cells. Each GCT cell comprises a first cathode layer with at least three cathode layer regions, which are separated from each other by a base layer. In orthogonal projection onto a plane parallel to the first main side each one of the cathode layer regions is strip-shaped and a width (w, w′), wherein the diode cells alternate with the GCT cells in a lateral direction in at least a mixed part, wherein in each GCT cell, the width (w′) of each one of the two outer cathode layer regions next to a diode cell neighbouring to that GCT cell is less than the width (w) of any intermediate cathode layer region between the two outer cathode layer regions in that GCT cell.

AB - A RC power semiconductor is provided which comprises a plurality of diode cells and a plurality of GCT cells. Each GCT cell comprises a first cathode layer with at least three cathode layer regions, which are separated from each other by a base layer. In orthogonal projection onto a plane parallel to the first main side each one of the cathode layer regions is strip-shaped and a width (w, w′), wherein the diode cells alternate with the GCT cells in a lateral direction in at least a mixed part, wherein in each GCT cell, the width (w′) of each one of the two outer cathode layer regions next to a diode cell neighbouring to that GCT cell is less than the width (w) of any intermediate cathode layer region between the two outer cathode layer regions in that GCT cell.

M3 - Patent

M1 - US2016284708A1

Y2 - 2016/03/23

ER -

Reverse Conducting Power Semiconductor Device

Abstract

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