REVERSE CONDUCTING POWER SEMICONDUCTOR DEVICE

Neophytos Lophitis (Inventor), F. Udrea (Inventor), U. Vemulapati (Inventor), L. Nistor (Inventor), M. Arnold (Inventor), J. Vobecky (Inventor), M. Rahimo (Inventor)

Research output: Patent

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Abstract

A RC power semiconductor is provided which comprises a plurality of diode cells and a plurality of GCT cells. Each GCT cell comprises a first cathode layer with at least three cathode layer regions, which are separated from each other by a base layer. In orthogonal projection onto a plane parallel to the first main side each one of the cathode layer regions is strip-shaped and a width (w, w′), wherein the diode cells alternate with the GCT cells in a lateral direction in at least a mixed part, wherein in each GCT cell, the width (w′) of each one of the two outer cathode layer regions next to a diode cell neighbouring to that GCT cell is less than the width (w) of any intermediate cathode layer region between the two outer cathode layer regions in that GCT cell.
Original languageEnglish
Patent numberUS2016284708 (A1)
Publication statusPublished - 29 Sep 2016

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semiconductor devices
conduction
cathodes
cells
diodes
strip
projection

Bibliographical note

This published patent is available on the EPO Espacenet database service at: https://worldwide.espacenet.com/publicationDetails/biblio?II=0&ND=3&adjacent=true&locale=en_EP&FT=D&date=20160929&CC=US&NR=2016284708A1&KC=A1.
Publication date is 29 September 2016

Cite this

Lophitis, N., Udrea, F., Vemulapati, U., Nistor, L., Arnold, M., Vobecky, J., & Rahimo, M. (2016). REVERSE CONDUCTING POWER SEMICONDUCTOR DEVICE. (Patent No. US2016284708 (A1)).

REVERSE CONDUCTING POWER SEMICONDUCTOR DEVICE. / Lophitis, Neophytos (Inventor); Udrea, F. (Inventor); Vemulapati, U. (Inventor); Nistor, L. (Inventor); Arnold, M. (Inventor); Vobecky, J. (Inventor); Rahimo, M. (Inventor).

Patent No.: US2016284708 (A1).

Research output: Patent

Lophitis, N, Udrea, F, Vemulapati, U, Nistor, L, Arnold, M, Vobecky, J & Rahimo, M 2016, REVERSE CONDUCTING POWER SEMICONDUCTOR DEVICE, Patent No. US2016284708 (A1).
Lophitis N, Udrea F, Vemulapati U, Nistor L, Arnold M, Vobecky J et al, inventors. REVERSE CONDUCTING POWER SEMICONDUCTOR DEVICE. US2016284708 (A1). 2016 Sep 29.
Lophitis, Neophytos (Inventor) ; Udrea, F. (Inventor) ; Vemulapati, U. (Inventor) ; Nistor, L. (Inventor) ; Arnold, M. (Inventor) ; Vobecky, J. (Inventor) ; Rahimo, M. (Inventor). / REVERSE CONDUCTING POWER SEMICONDUCTOR DEVICE. Patent No.: US2016284708 (A1).
@misc{454fe9eca67a4855b43375328f048da5,
title = "REVERSE CONDUCTING POWER SEMICONDUCTOR DEVICE",
abstract = "A RC power semiconductor is provided which comprises a plurality of diode cells and a plurality of GCT cells. Each GCT cell comprises a first cathode layer with at least three cathode layer regions, which are separated from each other by a base layer. In orthogonal projection onto a plane parallel to the first main side each one of the cathode layer regions is strip-shaped and a width (w, w′), wherein the diode cells alternate with the GCT cells in a lateral direction in at least a mixed part, wherein in each GCT cell, the width (w′) of each one of the two outer cathode layer regions next to a diode cell neighbouring to that GCT cell is less than the width (w) of any intermediate cathode layer region between the two outer cathode layer regions in that GCT cell.",
author = "Neophytos Lophitis and F. Udrea and U. Vemulapati and L. Nistor and M. Arnold and J. Vobecky and M. Rahimo",
note = "This published patent is available on the EPO Espacenet database service at: https://worldwide.espacenet.com/publicationDetails/biblio?II=0&ND=3&adjacent=true&locale=en_EP&FT=D&date=20160929&CC=US&NR=2016284708A1&KC=A1. Publication date is 29 September 2016; US2016284708 (A1)",
year = "2016",
month = "9",
day = "29",
language = "English",
type = "Patent",

}

TY - PAT

T1 - REVERSE CONDUCTING POWER SEMICONDUCTOR DEVICE

AU - Lophitis, Neophytos

AU - Udrea, F.

AU - Vemulapati, U.

AU - Nistor, L.

AU - Arnold, M.

AU - Vobecky, J.

AU - Rahimo, M.

N1 - This published patent is available on the EPO Espacenet database service at: https://worldwide.espacenet.com/publicationDetails/biblio?II=0&ND=3&adjacent=true&locale=en_EP&FT=D&date=20160929&CC=US&NR=2016284708A1&KC=A1. Publication date is 29 September 2016

PY - 2016/9/29

Y1 - 2016/9/29

N2 - A RC power semiconductor is provided which comprises a plurality of diode cells and a plurality of GCT cells. Each GCT cell comprises a first cathode layer with at least three cathode layer regions, which are separated from each other by a base layer. In orthogonal projection onto a plane parallel to the first main side each one of the cathode layer regions is strip-shaped and a width (w, w′), wherein the diode cells alternate with the GCT cells in a lateral direction in at least a mixed part, wherein in each GCT cell, the width (w′) of each one of the two outer cathode layer regions next to a diode cell neighbouring to that GCT cell is less than the width (w) of any intermediate cathode layer region between the two outer cathode layer regions in that GCT cell.

AB - A RC power semiconductor is provided which comprises a plurality of diode cells and a plurality of GCT cells. Each GCT cell comprises a first cathode layer with at least three cathode layer regions, which are separated from each other by a base layer. In orthogonal projection onto a plane parallel to the first main side each one of the cathode layer regions is strip-shaped and a width (w, w′), wherein the diode cells alternate with the GCT cells in a lateral direction in at least a mixed part, wherein in each GCT cell, the width (w′) of each one of the two outer cathode layer regions next to a diode cell neighbouring to that GCT cell is less than the width (w) of any intermediate cathode layer region between the two outer cathode layer regions in that GCT cell.

M3 - Patent

M1 - US2016284708 (A1)

ER -