Retrograde p-well for 10kV-class SiC IGBTs

Amit K. Tiwari, Marina Antoniou, Neophytos Lophitis, Samuel Perkins, Tatjana Trajkovic, Florin Udrea

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)
119 Downloads (Pure)


In this paper, we propose the use of a retrograde doping profile for the p-well for ultrahigh voltage (>uexcl;10 kV) SiC IGBTs. We show that the retrograde p-well effectively addresses the punchthrough issue, whereas offering a robust control over the gate threshold voltage. Both the punchthrough elimination and the gate threshold voltage control are crucial to high-voltage vertical IGBT architectures and are determined by the limits on the doping concentration and the depth that a conventional p-well implant can have. Without any punchthrough, a 10-kV SiC IGBT consisting of retrograde p-well yields gate threshold voltages in the range of 6-7 V with a gate oxide thickness of 100 nm. Gate oxide thickness is typically restricted to 50-60 nm in SiC IGBTs if a conventional p-well with 1 \times 10^{17} cm -3 is utilized. We further show that the optimized retrograde p-well offers the most optimum switching performance. We propose that such an effective retrograde p-well, which requires low-energy shallow implants and thus key to minimize processing challenges and device development cost, is highly promising for the ultrahigh-voltage (>10 kV) SiC IGBT technology.

Original languageEnglish
Article number8728169
Pages (from-to)3066-3072
Number of pages7
JournalIEEE Transactions on Electron Devices
Issue number7
Early online date5 Jun 2019
Publication statusPublished - Jul 2019

Bibliographical note

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  • Breakdown voltage
  • Punchthrough
  • Retrograde p-well
  • Sic igbts
  • Threshold voltage control

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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