Relative concentrations of carbon related defects in silicon

Stavros Christopoulos; David Parfitt; E. N. Sgourou; C. A. Londos; R. V. Vovk; A. Chroneos

doi:10.1007/s10854-016-5249-z

Relative concentrations of carbon related defects in silicon

Stavros Christopoulos, David Parfitt, E. N. Sgourou, C. A. Londos, R. V. Vovk, A. Chroneos

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2 Citations (Scopus)

Abstract

Irradiation induced defects in silicon are technologically important as they impact the electronic properties. Calculations based on density functional theory employing hybrid functionals have been previously used to investigate the structures and relative energies of defect clusters formed between vacancies, self-interstitials, carbon and oxygen atoms in silicon. In this study we employ a model to calculate the relative concentrations of carbon related defects in silicon. It is calculated that the carbon content has a significant impact upon the concentration of carbon-related defects. The CiCs defect is the most populous for all the conditions considered followed by the CiOiSiI and the CiOi defects. CiOiSiI and the CiOi become increasingly important for silicon with high carbon concentrations.

Original language	English
Pages (from-to)	11268–11272
Number of pages	5
Journal	Journal of Materials Science: Materials in Electronics
Volume	27
Issue number	11
Early online date	28 Jun 2016
DOIs	https://doi.org/10.1007/s10854-016-5249-z
Publication status	Published - Nov 2016

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title = "Relative concentrations of carbon related defects in silicon",

abstract = "Irradiation induced defects in silicon are technologically important as they impact the electronic properties. Calculations based on density functional theory employing hybrid functionals have been previously used to investigate the structures and relative energies of defect clusters formed between vacancies, self-interstitials, carbon and oxygen atoms in silicon. In this study we employ a model to calculate the relative concentrations of carbon related defects in silicon. It is calculated that the carbon content has a significant impact upon the concentration of carbon-related defects. The CiCs defect is the most populous for all the conditions considered followed by the CiOiSiI and the CiOi defects. CiOiSiI and the CiOi become increasingly important for silicon with high carbon concentrations. ",

author = "Stavros Christopoulos and David Parfitt and Sgourou, {E. N.} and Londos, {C. A.} and Vovk, {R. V.} and A. Chroneos",

note = "The full text is currently unavailable on the repository. This article is currently in press. Full citation details will be uploaded onto the repository when available. The final publication is available at Springer via http://dx.doi.org/10.1007/s10854-016-5249-z",

year = "2016",

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doi = "10.1007/s10854-016-5249-z",

language = "English",

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T1 - Relative concentrations of carbon related defects in silicon

AU - Christopoulos, Stavros

AU - Parfitt, David

AU - Sgourou, E. N.

AU - Londos, C. A.

AU - Vovk, R. V.

AU - Chroneos, A.

N1 - The full text is currently unavailable on the repository. This article is currently in press. Full citation details will be uploaded onto the repository when available. The final publication is available at Springer via http://dx.doi.org/10.1007/s10854-016-5249-z

PY - 2016/11

Y1 - 2016/11

N2 - Irradiation induced defects in silicon are technologically important as they impact the electronic properties. Calculations based on density functional theory employing hybrid functionals have been previously used to investigate the structures and relative energies of defect clusters formed between vacancies, self-interstitials, carbon and oxygen atoms in silicon. In this study we employ a model to calculate the relative concentrations of carbon related defects in silicon. It is calculated that the carbon content has a significant impact upon the concentration of carbon-related defects. The CiCs defect is the most populous for all the conditions considered followed by the CiOiSiI and the CiOi defects. CiOiSiI and the CiOi become increasingly important for silicon with high carbon concentrations.

AB - Irradiation induced defects in silicon are technologically important as they impact the electronic properties. Calculations based on density functional theory employing hybrid functionals have been previously used to investigate the structures and relative energies of defect clusters formed between vacancies, self-interstitials, carbon and oxygen atoms in silicon. In this study we employ a model to calculate the relative concentrations of carbon related defects in silicon. It is calculated that the carbon content has a significant impact upon the concentration of carbon-related defects. The CiCs defect is the most populous for all the conditions considered followed by the CiOiSiI and the CiOi defects. CiOiSiI and the CiOi become increasingly important for silicon with high carbon concentrations.

U2 - 10.1007/s10854-016-5249-z

DO - 10.1007/s10854-016-5249-z

M3 - Article

SN - 0957-4522

SN - 1573-482X

VL - 27

SP - 11268

EP - 11272

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 11

ER -

Relative concentrations of carbon related defects in silicon

Abstract

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