Reducing the Layer Number of AB Stacked Multilayer Graphene Grown on Nickel by Annealing at Low Temperature

J. Marquez Velasco, S. A. Giamini, N. Kelaidis, P. Tsipas, D. Tsoutsou, G. Kordas, Y. S. Raptis, N. Boukos, A. Dimoulas

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Controlling the number of layers of graphene grown by chemical vapor deposition is crucial for large scale graphene application. We propose here an etching process of graphene which can be applied immediately after growth to control the number of layers. We use nickel (Ni) foil at high temperature (T = 900 °C) to produce multilayer-AB-stacked-graphene (MLG). The etching process is based on annealing the samples in a hydrogen/argon atmosphere at a relatively low temperature (T = 450 °C) inside the growth chamber. The extent of etching is mainly controlled by the annealing process duration. Using Raman spectroscopy we demonstrate that the number of layers was reduced, changing from MLG to few-layer-AB-stacked-graphene and in some cases to randomly oriented few layer graphene near the substrate. Furthermore, our method offers the significant advantage that it does not introduce defects in the samples, maintaining their original high quality. This fact and the low temperature our method uses make it a good candidate for controlling the layer number of already grown graphene in processes with a low thermal budget.

Original languageEnglish
Article number405603
JournalNanotechnology
Volume26
Issue number40
DOIs
Publication statusPublished - 17 Sep 2015
Externally publishedYes

Fingerprint

Graphite
Nickel
Graphene
Multilayers
Annealing
Etching
Temperature
Argon
Metal foil
Raman spectroscopy
Hydrogen
Chemical vapor deposition
Defects
Substrates

Keywords

  • CVD
  • etching
  • Graphene
  • nickel
  • Raman

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Marquez Velasco, J., Giamini, S. A., Kelaidis, N., Tsipas, P., Tsoutsou, D., Kordas, G., ... Dimoulas, A. (2015). Reducing the Layer Number of AB Stacked Multilayer Graphene Grown on Nickel by Annealing at Low Temperature. Nanotechnology, 26(40), [405603]. https://doi.org/10.1088/0957-4484/26/40/405603

Reducing the Layer Number of AB Stacked Multilayer Graphene Grown on Nickel by Annealing at Low Temperature. / Marquez Velasco, J.; Giamini, S. A.; Kelaidis, N.; Tsipas, P.; Tsoutsou, D.; Kordas, G.; Raptis, Y. S.; Boukos, N.; Dimoulas, A.

In: Nanotechnology, Vol. 26, No. 40, 405603, 17.09.2015.

Research output: Contribution to journalArticle

Marquez Velasco, J, Giamini, SA, Kelaidis, N, Tsipas, P, Tsoutsou, D, Kordas, G, Raptis, YS, Boukos, N & Dimoulas, A 2015, 'Reducing the Layer Number of AB Stacked Multilayer Graphene Grown on Nickel by Annealing at Low Temperature' Nanotechnology, vol. 26, no. 40, 405603. https://doi.org/10.1088/0957-4484/26/40/405603
Marquez Velasco, J. ; Giamini, S. A. ; Kelaidis, N. ; Tsipas, P. ; Tsoutsou, D. ; Kordas, G. ; Raptis, Y. S. ; Boukos, N. ; Dimoulas, A. / Reducing the Layer Number of AB Stacked Multilayer Graphene Grown on Nickel by Annealing at Low Temperature. In: Nanotechnology. 2015 ; Vol. 26, No. 40.
@article{7d959f445a394c7a86a6bbf0362cf31f,
title = "Reducing the Layer Number of AB Stacked Multilayer Graphene Grown on Nickel by Annealing at Low Temperature",
abstract = "Controlling the number of layers of graphene grown by chemical vapor deposition is crucial for large scale graphene application. We propose here an etching process of graphene which can be applied immediately after growth to control the number of layers. We use nickel (Ni) foil at high temperature (T = 900 °C) to produce multilayer-AB-stacked-graphene (MLG). The etching process is based on annealing the samples in a hydrogen/argon atmosphere at a relatively low temperature (T = 450 °C) inside the growth chamber. The extent of etching is mainly controlled by the annealing process duration. Using Raman spectroscopy we demonstrate that the number of layers was reduced, changing from MLG to few-layer-AB-stacked-graphene and in some cases to randomly oriented few layer graphene near the substrate. Furthermore, our method offers the significant advantage that it does not introduce defects in the samples, maintaining their original high quality. This fact and the low temperature our method uses make it a good candidate for controlling the layer number of already grown graphene in processes with a low thermal budget.",
keywords = "CVD, etching, Graphene, nickel, Raman",
author = "{Marquez Velasco}, J. and Giamini, {S. A.} and N. Kelaidis and P. Tsipas and D. Tsoutsou and G. Kordas and Raptis, {Y. S.} and N. Boukos and A. Dimoulas",
year = "2015",
month = "9",
day = "17",
doi = "10.1088/0957-4484/26/40/405603",
language = "English",
volume = "26",
journal = "Nanotechnology",
issn = "0957-4484",
publisher = "IOP Publishing Ltd.",
number = "40",

}

TY - JOUR

T1 - Reducing the Layer Number of AB Stacked Multilayer Graphene Grown on Nickel by Annealing at Low Temperature

AU - Marquez Velasco, J.

AU - Giamini, S. A.

AU - Kelaidis, N.

AU - Tsipas, P.

AU - Tsoutsou, D.

AU - Kordas, G.

AU - Raptis, Y. S.

AU - Boukos, N.

AU - Dimoulas, A.

PY - 2015/9/17

Y1 - 2015/9/17

N2 - Controlling the number of layers of graphene grown by chemical vapor deposition is crucial for large scale graphene application. We propose here an etching process of graphene which can be applied immediately after growth to control the number of layers. We use nickel (Ni) foil at high temperature (T = 900 °C) to produce multilayer-AB-stacked-graphene (MLG). The etching process is based on annealing the samples in a hydrogen/argon atmosphere at a relatively low temperature (T = 450 °C) inside the growth chamber. The extent of etching is mainly controlled by the annealing process duration. Using Raman spectroscopy we demonstrate that the number of layers was reduced, changing from MLG to few-layer-AB-stacked-graphene and in some cases to randomly oriented few layer graphene near the substrate. Furthermore, our method offers the significant advantage that it does not introduce defects in the samples, maintaining their original high quality. This fact and the low temperature our method uses make it a good candidate for controlling the layer number of already grown graphene in processes with a low thermal budget.

AB - Controlling the number of layers of graphene grown by chemical vapor deposition is crucial for large scale graphene application. We propose here an etching process of graphene which can be applied immediately after growth to control the number of layers. We use nickel (Ni) foil at high temperature (T = 900 °C) to produce multilayer-AB-stacked-graphene (MLG). The etching process is based on annealing the samples in a hydrogen/argon atmosphere at a relatively low temperature (T = 450 °C) inside the growth chamber. The extent of etching is mainly controlled by the annealing process duration. Using Raman spectroscopy we demonstrate that the number of layers was reduced, changing from MLG to few-layer-AB-stacked-graphene and in some cases to randomly oriented few layer graphene near the substrate. Furthermore, our method offers the significant advantage that it does not introduce defects in the samples, maintaining their original high quality. This fact and the low temperature our method uses make it a good candidate for controlling the layer number of already grown graphene in processes with a low thermal budget.

KW - CVD

KW - etching

KW - Graphene

KW - nickel

KW - Raman

UR - http://www.scopus.com/inward/record.url?scp=84947590546&partnerID=8YFLogxK

U2 - 10.1088/0957-4484/26/40/405603

DO - 10.1088/0957-4484/26/40/405603

M3 - Article

VL - 26

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 40

M1 - 405603

ER -