Abstract
New dynamic electro-thermal models of the power bipolar devices (PiN diode and IGBT) are presented in this paper. Firstly, electric device models were made developing a new 1D representation of the ambipolar diffusion equation which is packaged as a module that can be reused for all bipolar devices, subject to appropriate boundary conditions. Then electric models were transformed into the electro-thermal models by adding a thermal node. This thermal node stores information about junction temperature and it represents a connection between the device and the rest of the circuit thermal network. All models have been found to be efficient and robust in all cases examined.
Original language | English |
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Number of pages | 4 |
Publication status | Published - 1 Jan 2001 |
Externally published | Yes |
Event | 13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01) - Osaka, Japan Duration: 4 Jun 2001 → 7 Jun 2001 |
Conference
Conference | 13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01) |
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Country/Territory | Japan |
City | Osaka |
Period | 4/06/01 → 7/06/01 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering