Physics-based dynamic electro-thermal models of power bipolar devices (PiN diode and IGBT)

P. M. Igic, P. A. Mawby, M. S. Towers

Research output: Contribution to conferencePaper

22 Citations (Scopus)

Abstract

New dynamic electro-thermal models of the power bipolar devices (PiN diode and IGBT) are presented in this paper. Firstly, electric device models were made developing a new 1D representation of the ambipolar diffusion equation which is packaged as a module that can be reused for all bipolar devices, subject to appropriate boundary conditions. Then electric models were transformed into the electro-thermal models by adding a thermal node. This thermal node stores information about junction temperature and it represents a connection between the device and the rest of the circuit thermal network. All models have been found to be efficient and robust in all cases examined.

Original languageEnglish
Number of pages4
Publication statusPublished - 1 Jan 2001
Externally publishedYes
Event13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01) - Osaka, Japan
Duration: 4 Jun 20017 Jun 2001

Conference

Conference13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01)
CountryJapan
CityOsaka
Period4/06/017/06/01

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Igic, P. M., Mawby, P. A., & Towers, M. S. (2001). Physics-based dynamic electro-thermal models of power bipolar devices (PiN diode and IGBT). Paper presented at 13th International Symposium on Power Semiconductor Devices and ICs (ISPSD'01), Osaka, Japan.