Physically based 2D compact model for power bipolar devices

P. M. Igic; M. S. Towers; P. A. Mawby

doi:10.1002/jnm.535

Physically based 2D compact model for power bipolar devices

P. M. Igic, M. S. Towers, P. A. Mawby

Swansea University

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The two-dimensional (2D) physical compact model for advanced power bipolar devices such as injection enhanced gate transistor (IEGT) or Trench IGBT is presented in this paper. In order to model the complex 2D nature of these devices the ambipolar diffusion equation has been solved simultaneously for different boundary conditions associated with different areas of the device. The IEGT compact model has been incorporated into the SABER simulator and tested in standard double-pulse switching test circuit. The compact model has been established to model a 4500V-1500A flat pack TOSHIBA IEGT.

Original language	English
Pages (from-to)	397-405
Number of pages	9
Journal	International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
Volume	17
Issue number	4
DOIs	https://doi.org/10.1002/jnm.535
Publication status	Published - 29 Jun 2004
Externally published	Yes

Keywords

Ambipolar equation
Bipolar power device
Compact model
IEGT
IGBT
Modelling

ASJC Scopus subject areas

Modelling and Simulation
Computer Science Applications
Electrical and Electronic Engineering

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10.1002/jnm.535

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title = "Physically based 2D compact model for power bipolar devices",

abstract = "The two-dimensional (2D) physical compact model for advanced power bipolar devices such as injection enhanced gate transistor (IEGT) or Trench IGBT is presented in this paper. In order to model the complex 2D nature of these devices the ambipolar diffusion equation has been solved simultaneously for different boundary conditions associated with different areas of the device. The IEGT compact model has been incorporated into the SABER simulator and tested in standard double-pulse switching test circuit. The compact model has been established to model a 4500V-1500A flat pack TOSHIBA IEGT.",

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author = "Igic, {P. M.} and Towers, {M. S.} and Mawby, {P. A.}",

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AU - Towers, M. S.

AU - Mawby, P. A.

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Y1 - 2004/6/29

N2 - The two-dimensional (2D) physical compact model for advanced power bipolar devices such as injection enhanced gate transistor (IEGT) or Trench IGBT is presented in this paper. In order to model the complex 2D nature of these devices the ambipolar diffusion equation has been solved simultaneously for different boundary conditions associated with different areas of the device. The IEGT compact model has been incorporated into the SABER simulator and tested in standard double-pulse switching test circuit. The compact model has been established to model a 4500V-1500A flat pack TOSHIBA IEGT.

AB - The two-dimensional (2D) physical compact model for advanced power bipolar devices such as injection enhanced gate transistor (IEGT) or Trench IGBT is presented in this paper. In order to model the complex 2D nature of these devices the ambipolar diffusion equation has been solved simultaneously for different boundary conditions associated with different areas of the device. The IEGT compact model has been incorporated into the SABER simulator and tested in standard double-pulse switching test circuit. The compact model has been established to model a 4500V-1500A flat pack TOSHIBA IEGT.

KW - Ambipolar equation

KW - Bipolar power device

KW - Compact model

KW - IEGT

KW - IGBT

KW - Modelling

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ER -

Physically based 2D compact model for power bipolar devices

Abstract

Keywords

ASJC Scopus subject areas

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