Physically based 2D compact model for power bipolar devices

P. M. Igic, M. S. Towers, P. A. Mawby

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The two-dimensional (2D) physical compact model for advanced power bipolar devices such as injection enhanced gate transistor (IEGT) or Trench IGBT is presented in this paper. In order to model the complex 2D nature of these devices the ambipolar diffusion equation has been solved simultaneously for different boundary conditions associated with different areas of the device. The IEGT compact model has been incorporated into the SABER simulator and tested in standard double-pulse switching test circuit. The compact model has been established to model a 4500V-1500A flat pack TOSHIBA IEGT.

Original languageEnglish
Pages (from-to)397-405
Number of pages9
JournalInternational Journal of Numerical Modelling: Electronic Networks, Devices and Fields
Volume17
Issue number4
DOIs
Publication statusPublished - 29 Jun 2004
Externally publishedYes

Keywords

  • Ambipolar equation
  • Bipolar power device
  • Compact model
  • IEGT
  • IGBT
  • Modelling

ASJC Scopus subject areas

  • Modelling and Simulation
  • Computer Science Applications
  • Electrical and Electronic Engineering

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