Physical parameterisation of 3C-Silicon Carbide (SiC) with scope to evaluate the suitability of the material for power diodes as an alternative to 4H-SiC

Anastasios Arvanitopoulos, Manuel Belanche Guadas, Samuel Perkins, Neophytos Lophitis, Konstantinos N. Gyftakis, Marina Antoniou

    Research output: Chapter in Book/Report/Conference proceedingConference proceedingpeer-review

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