Physical parameterisation of 3C-Silicon Carbide (SiC) with scope to evaluate the suitability of the material for power diodes as an alternative to 4H-SiC

Anastasios Arvanitopoulos, Manuel Belanche Guadas, Samuel Perkins, Neophytos Lophitis, Konstantinos N. Gyftakis, Marina Antoniou

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

Abstract

Major recent developments in growth expertise related to the cubic polytype of Silicon Carbide, the 3C-SiC, coupled with its remarkable physical properties and the low fabrication cost, suggest that within the next five years, 3C-SiC devices can become a commercial reality. It is therefore important to develop Finite Element Method (FEM) techniques and models for accurate device simulation. Furthermore, it is also needed to perform an exhaustive simulation investigation with scope to identify which family of devices, which voltage class and for which applications this polytype is suited. In this paper, we present a complete set of physical models and material parameters for bulk 3C-SiC aiming Technology Computer Aided Design (TCAD) tools. These are compared with those of 4H-SiC, the most well developed polytype of SiC. Thereafter, the newly developed material parameters are used to assess 3C- and 4H-SiC vertical power diodes, P-i-N and Schottky Barrier Diodes (SBDs), to create trade-off maps relating the on-state voltage drop and the blocking capability. Depending on the operation requirements imposed by the application, the developed trade-off maps set the boundary of the realm for those two polytypes. It also allows us to predict which applications will benefit from an electrically graded 3C-SiC power diodes.

LanguageEnglish
Title of host publicationProceedings of the 2017 IEEE 11th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2017
PublisherIEEE
Pages565-571
Number of pages7
Volume2017-January
ISBN (Electronic)978-1-5090-0409-6
DOIs
StatePublished - 6 Oct 2017
Event11th IEEE International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives - Tinos, Greece
Duration: 29 Aug 20171 Sep 2017
Conference number: 11
https://www.egr.msu.edu/sdemped2017/home

Conference

Conference11th IEEE International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives
Abbreviated titleSDEMPED 2017
CountryGreece
CityTinos
Period29/08/171/09/17
Internet address

Fingerprint

Parameterization
Silicon carbide
Schottky barrier diodes
Computer aided design
Physical properties
Finite element method
Fabrication
Electric potential
Costs

Bibliographical note

© © 2017 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works

Keywords

  • 3C-SiC
  • FEM simulations
  • material parameters
  • P-i-N
  • SBD
  • semiconductor physics
  • TCAD model
  • vertical diodes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Energy Engineering and Power Technology

Cite this

Arvanitopoulos, A., Belanche Guadas, M., Perkins, S., Lophitis, N., Gyftakis, K. N., & Antoniou, M. (2017). Physical parameterisation of 3C-Silicon Carbide (SiC) with scope to evaluate the suitability of the material for power diodes as an alternative to 4H-SiC. In Proceedings of the 2017 IEEE 11th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2017 (Vol. 2017-January, pp. 565-571). IEEE. DOI: 10.1109/DEMPED.2017.8062411, 10.1109/DEMPED.2017.8062411

Physical parameterisation of 3C-Silicon Carbide (SiC) with scope to evaluate the suitability of the material for power diodes as an alternative to 4H-SiC. / Arvanitopoulos, Anastasios; Belanche Guadas, Manuel; Perkins, Samuel; Lophitis, Neophytos; Gyftakis, Konstantinos N.; Antoniou, Marina.

Proceedings of the 2017 IEEE 11th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2017. Vol. 2017-January IEEE, 2017. p. 565-571.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

Arvanitopoulos, A, Belanche Guadas, M, Perkins, S, Lophitis, N, Gyftakis, KN & Antoniou, M 2017, Physical parameterisation of 3C-Silicon Carbide (SiC) with scope to evaluate the suitability of the material for power diodes as an alternative to 4H-SiC. in Proceedings of the 2017 IEEE 11th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2017. vol. 2017-January, IEEE, pp. 565-571, 11th IEEE International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, Tinos, Greece, 29/08/17. DOI: 10.1109/DEMPED.2017.8062411, 10.1109/DEMPED.2017.8062411
Arvanitopoulos A, Belanche Guadas M, Perkins S, Lophitis N, Gyftakis KN, Antoniou M. Physical parameterisation of 3C-Silicon Carbide (SiC) with scope to evaluate the suitability of the material for power diodes as an alternative to 4H-SiC. In Proceedings of the 2017 IEEE 11th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2017. Vol. 2017-January. IEEE. 2017. p. 565-571. Available from, DOI: 10.1109/DEMPED.2017.8062411, 10.1109/DEMPED.2017.8062411
Arvanitopoulos, Anastasios ; Belanche Guadas, Manuel ; Perkins, Samuel ; Lophitis, Neophytos ; Gyftakis, Konstantinos N. ; Antoniou, Marina. / Physical parameterisation of 3C-Silicon Carbide (SiC) with scope to evaluate the suitability of the material for power diodes as an alternative to 4H-SiC. Proceedings of the 2017 IEEE 11th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2017. Vol. 2017-January IEEE, 2017. pp. 565-571
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