Performance improvement of >10kV SiC IGBTs with retrograde p-well

Amit K. Tiwari, Marina Antoniou, Neophytos Lophitis, Samuel Perkins, Tanya Trajkovic, Florin Udrea

    Research output: Chapter in Book/Report/Conference proceedingConference proceedingpeer-review

    3 Citations (Scopus)


    A p-well consisting of a retrograde doping profile is investigated for performance improvement of >10kV SiC IGBTs. The retrograde p-well, which can be realized using low-energy shallow implants, effectively addresses the punch-through, a common issue in high-voltage vertical architectures consisting of a conventional p-well with typical doping density of 1e17cm-3 and depth 1µm. The innovative approach offers an extended control over the threshold voltage. Without any punch-through, a threshold voltage in the range 6V-7V is achieved with gate-oxide thickness of 100nm. Gate oxide thickness is typically restricted to 50nm if a conventional p-well with doping density of 1e17cm-3 is utilized. We therefore propose a highly promising solution, the retrograde p-well, for the development of >10kV SiC IGBTs.
    Original languageEnglish
    Title of host publicationThe 12th European Conference on Silicon Carbide and Related Materials (ECSCRM)
    EditorsPeter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield
    PublisherTrans Tech Publications
    Number of pages4
    ISBN (Print) 978-3-0357-1332-9
    Publication statusPublished - 31 Jul 2019
    Event12th European Conference on Silicon Carbide and Related Materials - Birmingham, United Kingdom
    Duration: 2 Sept 20186 Sept 2018

    Publication series

    NameMaterials Science Forum
    ISSN (Print)0255-5476
    ISSN (Electronic)1662-9752


    Conference12th European Conference on Silicon Carbide and Related Materials
    Abbreviated titleECSCRM 2018
    Country/TerritoryUnited Kingdom


    • Breakdown Voltage
    • High-voltage SiC IGBT
    • Ion-implantation
    • Punch-through
    • Retrograde p-well
    • Threshold voltage control

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering


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