Abstract
A p-well consisting of a retrograde doping profile is investigated for performance improvement of >10kV SiC IGBTs. The retrograde p-well, which can be realized using low-energy shallow implants, effectively addresses the punch-through, a common issue in high-voltage vertical architectures consisting of a conventional p-well with typical doping density of 1e17cm-3 and depth 1µm. The innovative approach offers an extended control over the threshold voltage. Without any punch-through, a threshold voltage in the range 6V-7V is achieved with gate-oxide thickness of 100nm. Gate oxide thickness is typically restricted to 50nm if a conventional p-well with doping density of 1e17cm-3 is utilized. We therefore propose a highly promising solution, the retrograde p-well, for the development of >10kV SiC IGBTs.
| Original language | English |
|---|---|
| Title of host publication | The 12th European Conference on Silicon Carbide and Related Materials (ECSCRM) |
| Editors | Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield |
| Publisher | Trans Tech Publications |
| Pages | 639-642 |
| Number of pages | 4 |
| Volume | (In-Press) |
| ISBN (Print) | 978-3-0357-1332-9 |
| DOIs | |
| Publication status | Published - 31 Jul 2019 |
| Event | 12th European Conference on Silicon Carbide and Related Materials - Birmingham, United Kingdom Duration: 2 Sep 2018 → 6 Sep 2018 |
Publication series
| Name | Materials Science Forum |
|---|---|
| Volume | 963 |
| ISSN (Print) | 0255-5476 |
| ISSN (Electronic) | 1662-9752 |
Conference
| Conference | 12th European Conference on Silicon Carbide and Related Materials |
|---|---|
| Abbreviated title | ECSCRM 2018 |
| Country | United Kingdom |
| City | Birmingham |
| Period | 2/09/18 → 6/09/18 |
Keywords
- Breakdown Voltage
- High-voltage SiC IGBT
- Ion-implantation
- Punch-through
- Retrograde p-well
- Threshold voltage control
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Cite this
K. Tiwari, A., Antoniou, M., Lophitis, N., Perkins, S., Trajkovic, T., & Udrea, F. (2019). Performance improvement of >10kV SiC IGBTs with retrograde p-well. In P. M. Gammon, V. A. Shah, R. A. McMahon, M. R. Jennings, O. Vavasour, P. A. Mawby, & F. Padfield (Eds.), The 12th European Conference on Silicon Carbide and Related Materials (ECSCRM) (Vol. (In-Press), pp. 639-642). (Materials Science Forum; Vol. 963). Trans Tech Publications. https://doi.org/10.4028/www.scientific.net/MSF.963.639