@inproceedings{1f3f8003394d4f218310def64bba6f44,
title = "Performance improvement of >10kV SiC IGBTs with retrograde p-well",
abstract = "A p-well consisting of a retrograde doping profile is investigated for performance improvement of >10kV SiC IGBTs. The retrograde p-well, which can be realized using low-energy shallow implants, effectively addresses the punch-through, a common issue in high-voltage vertical architectures consisting of a conventional p-well with typical doping density of 1e17cm-3 and depth 1µm. The innovative approach offers an extended control over the threshold voltage. Without any punch-through, a threshold voltage in the range 6V-7V is achieved with gate-oxide thickness of 100nm. Gate oxide thickness is typically restricted to 50nm if a conventional p-well with doping density of 1e17cm-3 is utilized. We therefore propose a highly promising solution, the retrograde p-well, for the development of >10kV SiC IGBTs.",
keywords = "Breakdown Voltage, High-voltage SiC IGBT, Ion-implantation, Punch-through, Retrograde p-well, Threshold voltage control",
author = "{K. Tiwari}, Amit and Marina Antoniou and Neophytos Lophitis and Samuel Perkins and Tanya Trajkovic and Florin Udrea",
year = "2019",
month = jul,
day = "31",
doi = "10.4028/www.scientific.net/MSF.963.639",
language = "English",
isbn = " 978-3-0357-1332-9",
volume = "(In-Press)",
series = "Materials Science Forum",
publisher = "Trans Tech Publications",
pages = "639--642",
editor = "Gammon, {Peter M.} and Shah, {Vishal A.} and McMahon, {Richard A.} and Jennings, {Michael R.} and Oliver Vavasour and Mawby, {Philip A.} and Faye Padfield",
booktitle = "The 12th European Conference on Silicon Carbide and Related Materials (ECSCRM)",
address = "Germany",
note = "12th European Conference on Silicon Carbide and Related Materials , ECSCRM 2018 ; Conference date: 02-09-2018 Through 06-09-2018",
}