Abstract
| Original language | English |
|---|---|
| Title of host publication | The 12th European Conference on Silicon Carbide and Related Materials (ECSCRM) |
| Editors | Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield |
| Publisher | Trans Tech Publications |
| Pages | 639-642 |
| Number of pages | 4 |
| Volume | (In-Press) |
| ISBN (Print) | 978-3-0357-1332-9 |
| DOIs | |
| Publication status | Published - 31 Jul 2019 |
| Event | 12th European Conference on Silicon Carbide and Related Materials - Birmingham, United Kingdom Duration: 2 Sep 2018 → 6 Sep 2018 |
Publication series
| Name | Materials Science Forum |
|---|---|
| Volume | 963 |
| ISSN (Print) | 0255-5476 |
| ISSN (Electronic) | 1662-9752 |
Conference
| Conference | 12th European Conference on Silicon Carbide and Related Materials |
|---|---|
| Abbreviated title | ECSCRM 2018 |
| Country | United Kingdom |
| City | Birmingham |
| Period | 2/09/18 → 6/09/18 |
Fingerprint
Keywords
- Breakdown Voltage
- High-voltage SiC IGBT
- Ion-implantation
- Punch-through
- Retrograde p-well
- Threshold voltage control
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Performance improvement of >10kV SiC IGBTs with retrograde p-well. / K. Tiwari, Amit; Antoniou, Marina; Lophitis, Neophytos; Perkins, Samuel; Trajkovic, Tanya; Udrea, Florin.
The 12th European Conference on Silicon Carbide and Related Materials (ECSCRM). ed. / Peter M. Gammon; Vishal A. Shah; Richard A. McMahon; Michael R. Jennings; Oliver Vavasour; Philip A. Mawby; Faye Padfield. Vol. (In-Press) Trans Tech Publications, 2019. p. 639-642 (Materials Science Forum; Vol. 963).Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding
}
TY - GEN
T1 - Performance improvement of >10kV SiC IGBTs with retrograde p-well
AU - K. Tiwari, Amit
AU - Antoniou, Marina
AU - Lophitis, Neophytos
AU - Perkins, Samuel
AU - Trajkovic, Tanya
AU - Udrea, Florin
PY - 2019/7/31
Y1 - 2019/7/31
N2 - A p-well consisting of a retrograde doping profile is investigated for performance improvement of >10kV SiC IGBTs. The retrograde p-well, which can be realized using low-energy shallow implants, effectively addresses the punch-through, a common issue in high-voltage vertical architectures consisting of a conventional p-well with typical doping density of 1e17cm-3 and depth 1µm. The innovative approach offers an extended control over the threshold voltage. Without any punch-through, a threshold voltage in the range 6V-7V is achieved with gate-oxide thickness of 100nm. Gate oxide thickness is typically restricted to 50nm if a conventional p-well with doping density of 1e17cm-3 is utilized. We therefore propose a highly promising solution, the retrograde p-well, for the development of >10kV SiC IGBTs.
AB - A p-well consisting of a retrograde doping profile is investigated for performance improvement of >10kV SiC IGBTs. The retrograde p-well, which can be realized using low-energy shallow implants, effectively addresses the punch-through, a common issue in high-voltage vertical architectures consisting of a conventional p-well with typical doping density of 1e17cm-3 and depth 1µm. The innovative approach offers an extended control over the threshold voltage. Without any punch-through, a threshold voltage in the range 6V-7V is achieved with gate-oxide thickness of 100nm. Gate oxide thickness is typically restricted to 50nm if a conventional p-well with doping density of 1e17cm-3 is utilized. We therefore propose a highly promising solution, the retrograde p-well, for the development of >10kV SiC IGBTs.
KW - Breakdown Voltage
KW - High-voltage SiC IGBT
KW - Ion-implantation
KW - Punch-through
KW - Retrograde p-well
KW - Threshold voltage control
UR - http://www.scopus.com/inward/record.url?scp=85071850852&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.963.639
DO - 10.4028/www.scientific.net/MSF.963.639
M3 - Conference proceeding
SN - 978-3-0357-1332-9
VL - (In-Press)
T3 - Materials Science Forum
SP - 639
EP - 642
BT - The 12th European Conference on Silicon Carbide and Related Materials (ECSCRM)
A2 - Gammon, Peter M.
A2 - Shah, Vishal A.
A2 - McMahon, Richard A.
A2 - Jennings, Michael R.
A2 - Vavasour, Oliver
A2 - Mawby, Philip A.
A2 - Padfield, Faye
PB - Trans Tech Publications
ER -