Performance improvement of >10kV SiC IGBTs with retrograde p-well

Amit K. Tiwari, Marina Antoniou, Neophytos Lophitis, Samuel Perkins, Tanya Trajkovic, Florin Udrea

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

1 Citation (Scopus)

Abstract

A p-well consisting of a retrograde doping profile is investigated for performance improvement of >10kV SiC IGBTs. The retrograde p-well, which can be realized using low-energy shallow implants, effectively addresses the punch-through, a common issue in high-voltage vertical architectures consisting of a conventional p-well with typical doping density of 1e17cm-3 and depth 1µm. The innovative approach offers an extended control over the threshold voltage. Without any punch-through, a threshold voltage in the range 6V-7V is achieved with gate-oxide thickness of 100nm. Gate oxide thickness is typically restricted to 50nm if a conventional p-well with doping density of 1e17cm-3 is utilized. We therefore propose a highly promising solution, the retrograde p-well, for the development of >10kV SiC IGBTs.
Original languageEnglish
Title of host publicationThe 12th European Conference on Silicon Carbide and Related Materials (ECSCRM)
EditorsPeter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield
PublisherTrans Tech Publications
Pages639-642
Number of pages4
Volume(In-Press)
ISBN (Print) 978-3-0357-1332-9
DOIs
Publication statusPublished - 31 Jul 2019
Event12th European Conference on Silicon Carbide and Related Materials - Birmingham, United Kingdom
Duration: 2 Sep 20186 Sep 2018

Publication series

NameMaterials Science Forum
Volume963
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference12th European Conference on Silicon Carbide and Related Materials
Abbreviated titleECSCRM 2018
CountryUnited Kingdom
CityBirmingham
Period2/09/186/09/18

Keywords

  • Breakdown Voltage
  • High-voltage SiC IGBT
  • Ion-implantation
  • Punch-through
  • Retrograde p-well
  • Threshold voltage control

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Performance improvement of >10kV SiC IGBTs with retrograde p-well'. Together they form a unique fingerprint.

  • Cite this

    K. Tiwari, A., Antoniou, M., Lophitis, N., Perkins, S., Trajkovic, T., & Udrea, F. (2019). Performance improvement of >10kV SiC IGBTs with retrograde p-well. In P. M. Gammon, V. A. Shah, R. A. McMahon, M. R. Jennings, O. Vavasour, P. A. Mawby, & F. Padfield (Eds.), The 12th European Conference on Silicon Carbide and Related Materials (ECSCRM) (Vol. (In-Press), pp. 639-642). (Materials Science Forum; Vol. 963). Trans Tech Publications. https://doi.org/10.4028/www.scientific.net/MSF.963.639