Parameters influencing the maximum controllable current in gate commutated thyristors

Neophytos Lophitis, M. Antoniou, F. Udrea, I. Nistor, M. Arnold, T. Wikström, J. Vobecky

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The model of interconnected numerical device segments can give a prediction on the dynamic performance of large area full wafer devices such as the Gate Commutated Thyristors (GCTs) and can be used as an optimisation tool for designing GCTs. In this study the authors evaluate the relative importance of the shallow p-base thickness, its peak concentration, the depth of the p-base and the buffer peak concentration.
Original languageEnglish
Pages (from-to)221-226
JournalCircuits, Devices & Systems
Volume8
Issue number3
DOIs
Publication statusPublished - May 2014

Bibliographical note

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Keywords

  • electric current control
  • optimisation
  • thyristors
  • voltage control
  • GCT
  • buffer peak concentration
  • dynamic performance
  • gate commutated thyristors
  • interconnected numerical device segments model
  • large area full wafer devices
  • maximum controllable current
  • optimisation tool
  • p-base depth
  • shallow p-base thickness

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