Parameters influencing the maximum controllable current in gate commutated thyristors

Neophytos Lophitis, M. Antoniou, F. Udrea, I. Nistor, M. Arnold, T. Wikström, J. Vobecky

    Research output: Contribution to journalArticle

    18 Citations (Scopus)

    Abstract

    The model of interconnected numerical device segments can give a prediction on the dynamic performance of large area full wafer devices such as the Gate Commutated Thyristors (GCTs) and can be used as an optimisation tool for designing GCTs. In this study the authors evaluate the relative importance of the shallow p-base thickness, its peak concentration, the depth of the p-base and the buffer peak concentration.
    Original languageEnglish
    Pages (from-to)221-226
    JournalCircuits, Devices & Systems
    Volume8
    Issue number3
    DOIs
    Publication statusPublished - May 2014

    Bibliographical note

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    Keywords

    • electric current control
    • optimisation
    • thyristors
    • voltage control
    • GCT
    • buffer peak concentration
    • dynamic performance
    • gate commutated thyristors
    • interconnected numerical device segments model
    • large area full wafer devices
    • maximum controllable current
    • optimisation tool
    • p-base depth
    • shallow p-base thickness

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