Abstract
The model of interconnected numerical device segments can give a prediction on the dynamic performance of large area full wafer devices such as the Gate Commutated Thyristors (GCTs) and can be used as an optimisation tool for designing GCTs. In this study the authors evaluate the relative importance of the shallow p-base thickness, its peak concentration, the depth of the p-base and the buffer peak concentration.
| Original language | English |
|---|---|
| Pages (from-to) | 221-226 |
| Journal | Circuits, Devices & Systems |
| Volume | 8 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - May 2014 |
Bibliographical note
The full text is currently unavailable on the repository.Keywords
- electric current control
- optimisation
- thyristors
- voltage control
- GCT
- buffer peak concentration
- dynamic performance
- gate commutated thyristors
- interconnected numerical device segments model
- large area full wafer devices
- maximum controllable current
- optimisation tool
- p-base depth
- shallow p-base thickness