Oxygen migration in doped BaGdInO4

Kugan Kuganathan, Konstantinos Davazoglou, Ruslan Vovk, Alexander Chroneos

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    Abstract

    Doped-BaGdInO 4 is a promising material for many applications including solid oxide fuel cells due to its high oxide-ion conductivity. Here we employ atomistic simulations to show that the activation energy for oxygen migration in Ca-doped BaGdInO 4 is lower as compared to undoped BaGdInO 4 and importantly divalent doping will form oxygen vacancies. The results are consistent with recent experimental work that determined an increase in the diffusivity of Ca-doped BaGdInO 4 as compared to the undoped case. Additionally, the most thermodynamically feasible defect in this material is the Gd[sbnd]In anti-site. Promising isovalent dopants on the Ba, Gd and In were found to be the Sr, Al and Sc respectively. The most favourable dopant on the Gd site to produce oxygen vacancies is Ca and its solution energy is lower only by 0.02 eV than that calculated for Sr. Ba 2+ ion conduction in this material is slow with the migration energy barrier being higher than 2 eV.

    Original languageEnglish
    Article number115729
    Number of pages7
    JournalSolid State Ionics
    Volume369
    Early online date10 Aug 2021
    DOIs
    Publication statusPublished - 15 Oct 2021

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    Keywords

    • BaGdInO4
    • Defects
    • Dopants
    • Atomistic simulation

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