Oxygen diffusion in germanium: interconnecting point defect parameters with bulk properties

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Abstract

Oxygen is introduced in germanium during crystal growth and processing and can lead to the formation of clusters that may impact the performance of devices. Therefore the understanding of its properties in germanium over a wide temperature range is important. Here we employ the so-called cBΩ model in which the defect Gibbs energy is proportional to the isothermal bulk modulus (B) and the mean volume per atom (Ω) to describe oxygen diffusion in germanium. The model describes oxygen diffusion in germanium in the temperature range considered and the derived results are discussed in view of the available experimental data.
Original languageEnglish
Pages (from-to)7378-7380
JournalJournal of Materials Science: Materials in Electronics
Volume26
Issue number10
DOIs
Publication statusPublished - 2015

Bibliographical note

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Keywords

  • Defects
  • Diffusion
  • Diffusion in gases
  • Oxygen
  • Point defects
  • Bulk properties
  • Isothermal bulk modulus
  • Oxygen diffusion
  • Performance of devices
  • Temperature range
  • Wide temperature ranges
  • Germanium

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