Oxygen diffusion in germanium: interconnecting point defect parameters with bulk properties

Alexander Chroneos, R.V. Vovk

    Research output: Contribution to journalArticle

    7 Citations (Scopus)


    Oxygen is introduced in germanium during crystal growth and processing and can lead to the formation of clusters that may impact the performance of devices. Therefore the understanding of its properties in germanium over a wide temperature range is important. Here we employ the so-called cBΩ model in which the defect Gibbs energy is proportional to the isothermal bulk modulus (B) and the mean volume per atom (Ω) to describe oxygen diffusion in germanium. The model describes oxygen diffusion in germanium in the temperature range considered and the derived results are discussed in view of the available experimental data.
    Original languageEnglish
    Pages (from-to)7378-7380
    JournalJournal of Materials Science: Materials in Electronics
    Issue number10
    Publication statusPublished - 2015

    Bibliographical note

    The full text of this item is not available from the repository.


    • Defects
    • Diffusion
    • Diffusion in gases
    • Oxygen
    • Point defects
    • Bulk properties
    • Isothermal bulk modulus
    • Oxygen diffusion
    • Performance of devices
    • Temperature range
    • Wide temperature ranges
    • Germanium


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