Oxygen defect processes in silicon and silicon germanium

A. Chroneos, E.N. Sgourou, C.A. Londos, U. Schwingenschlögl

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    Abstract

    Silicon and silicon germanium are the archetypical elemental and alloy semiconductor materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of radiation induced defects involving oxygen, carbon, and intrinsic defects is important for the improvement of devices as these defects can have a deleterious impact on the properties of silicon and silicon germanium. In the present review, we mainly focus on oxygen-related defects and the impact of isovalent doping on their properties in silicon and silicon germanium. The efficacy of the isovalent doping strategies to constrain the oxygen-related defects is discussed in view of recent infrared spectroscopy and density functional theory studies.
    Original languageEnglish
    Article number021306
    JournalApplied Physics Reviews
    Volume2
    Issue number2
    DOIs
    Publication statusPublished - Jun 2015

    Bibliographical note

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    Keywords

    • BiCMOS technology
    • Carbon
    • Defects
    • Density functional theory
    • Germanium
    • Infrared spectroscopy
    • Oxygen
    • Semiconductor doping
    • Semiconductor materials
    • Silicon
    • Density functional theory studies
    • Doping strategies
    • Intrinsic defects
    • Oxygen defect
    • Oxygen-related defects
    • Photovoltaic applications
    • Radiation induced defects
    • Silicon Germanium

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  • Cite this

    Chroneos, A., Sgourou, E. N., Londos, C. A., & Schwingenschlögl, U. (2015). Oxygen defect processes in silicon and silicon germanium. Applied Physics Reviews, 2(2), [021306]. https://doi.org/10.1063/1.4922251