Oxygen aggregation kinetics, thermal donors and carbon-oxygen defect formation in silicon containing carbon and tin

T. Angeletos; E.N. Sgourou; A. Andrianakis; A. Diamantopoulou; A. Chroneos; C.A. Londos

doi:10.1063/1.4923388

Oxygen aggregation kinetics, thermal donors and carbon-oxygen defect formation in silicon containing carbon and tin

T. Angeletos, E.N. Sgourou, A. Andrianakis, A. Diamantopoulou, A. Chroneos, C.A. Londos

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Abstract

Localized vibrational mode spectroscopy measurements on Czochralski silicon (Cz-Si) samples subjected to isothermal annealing at 450 °C are reported. First, we studied the effect of carbon (C) and tin (Sn) isovalent dopants on the aggregation kinetics of oxygen. It is determined that the reduction rate of oxygen is described by the Johnson-Mehl-Avrami equation in accordance with previous reports. The activation energy related with the reaction rate constant of the process is calculated to increase from Cz-Si, to C-doped Cz-Si (CCz-Si), to Sn-doped Cz-Si contained C (SnCz-Si). This is attributed to the presence of the isovalent dopants that may impact both the kinetics of the oxygen atoms and also may lead to the formation of other oxygen-related clusters. Second, we studied the effect of Sn on the formation and evolution of carbon-oxygen (C-O) defects. It was determined that the presence of Sn suppresses the formation of the C-O defects as indicated by the reduction in the strength of the 683, 626, and 586 cm−1 well-known bands of CsOi defect. The phenomenon is attributed to the association of Sn with C atoms that may prevent the pairing of O with C. Third, we investigated the effect of C and Sn on the formation of thermal donors (TDs). Regarding carbon our results verified previous reports that carbon suppresses the formation of TDs. Interestingly, when both C and Sn are present in Si, very weak bands of TDs were observed, although it is known that Sn alone suppress their formation. This may be attributed to the competing strains of C and Sn in the Si lattice.

Original language	English
Article number	4923388
Journal	Journal of Applied Physics
Volume	118
Issue number	1
DOIs	https://doi.org/10.1063/1.4923388
Publication status	Published - Jul 2015

Bibliographical note

Copyright (2015) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Angeletos, T. , Sgourou, E.N. , Andrianakis, A. , Diamantopoulou, A. , Chroneos, A. and Londos, C.A. (2015) Oxygen aggregation kinetics, thermal donors and carbon-oxygen defect formation in silicon containing carbon and tin. Journal of Applied Physics, volume 118 (1): Article number 4923388 and may be found at http://dx.doi.org/10.1063/1.4923388.

Keywords

Activation energy
Defects
Doping (additives)
Isothermal annealing
Kinetics
Oxygen
Rate constants
Silicon
Aggregation kinetics
Czochralski silicon
Effect of carbons
Formation and evolutions
Johnson Mehl Avrami equation
Reduction rate
Spectroscopy measurements
Vibrational modes

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Oxygen aggregation kineticsFinal published version, 1.81 MB

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@article{abddc827fa00439db221af96c11a96d9,

title = "Oxygen aggregation kinetics, thermal donors and carbon-oxygen defect formation in silicon containing carbon and tin",

abstract = "Localized vibrational mode spectroscopy measurements on Czochralski silicon (Cz-Si) samples subjected to isothermal annealing at 450 °C are reported. First, we studied the effect of carbon (C) and tin (Sn) isovalent dopants on the aggregation kinetics of oxygen. It is determined that the reduction rate of oxygen is described by the Johnson-Mehl-Avrami equation in accordance with previous reports. The activation energy related with the reaction rate constant of the process is calculated to increase from Cz-Si, to C-doped Cz-Si (CCz-Si), to Sn-doped Cz-Si contained C (SnCz-Si). This is attributed to the presence of the isovalent dopants that may impact both the kinetics of the oxygen atoms and also may lead to the formation of other oxygen-related clusters. Second, we studied the effect of Sn on the formation and evolution of carbon-oxygen (C-O) defects. It was determined that the presence of Sn suppresses the formation of the C-O defects as indicated by the reduction in the strength of the 683, 626, and 586 cm−1 well-known bands of CsOi defect. The phenomenon is attributed to the association of Sn with C atoms that may prevent the pairing of O with C. Third, we investigated the effect of C and Sn on the formation of thermal donors (TDs). Regarding carbon our results verified previous reports that carbon suppresses the formation of TDs. Interestingly, when both C and Sn are present in Si, very weak bands of TDs were observed, although it is known that Sn alone suppress their formation. This may be attributed to the competing strains of C and Sn in the Si lattice. ",

keywords = "Activation energy, Defects, Doping (additives), Isothermal annealing, Kinetics, Oxygen, Rate constants, Silicon, Aggregation kinetics, Czochralski silicon, Effect of carbons, Formation and evolutions, Johnson Mehl Avrami equation, Reduction rate, Spectroscopy measurements, Vibrational modes",

author = "T. Angeletos and E.N. Sgourou and A. Andrianakis and A. Diamantopoulou and A. Chroneos and C.A. Londos",

note = "Copyright (2015) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Angeletos, T. , Sgourou, E.N. , Andrianakis, A. , Diamantopoulou, A. , Chroneos, A. and Londos, C.A. (2015) Oxygen aggregation kinetics, thermal donors and carbon-oxygen defect formation in silicon containing carbon and tin. Journal of Applied Physics, volume 118 (1): Article number 4923388 and may be found at http://dx.doi.org/10.1063/1.4923388.",

year = "2015",

month = jul,

doi = "10.1063/1.4923388",

language = "English",

volume = "118",

journal = "Journal of Applied Physics",

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publisher = "American Institute of Physics",

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T1 - Oxygen aggregation kinetics, thermal donors and carbon-oxygen defect formation in silicon containing carbon and tin

AU - Angeletos, T.

AU - Sgourou, E.N.

AU - Andrianakis, A.

AU - Diamantopoulou, A.

AU - Chroneos, A.

AU - Londos, C.A.

N1 - Copyright (2015) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Angeletos, T. , Sgourou, E.N. , Andrianakis, A. , Diamantopoulou, A. , Chroneos, A. and Londos, C.A. (2015) Oxygen aggregation kinetics, thermal donors and carbon-oxygen defect formation in silicon containing carbon and tin. Journal of Applied Physics, volume 118 (1): Article number 4923388 and may be found at http://dx.doi.org/10.1063/1.4923388.

PY - 2015/7

Y1 - 2015/7

N2 - Localized vibrational mode spectroscopy measurements on Czochralski silicon (Cz-Si) samples subjected to isothermal annealing at 450 °C are reported. First, we studied the effect of carbon (C) and tin (Sn) isovalent dopants on the aggregation kinetics of oxygen. It is determined that the reduction rate of oxygen is described by the Johnson-Mehl-Avrami equation in accordance with previous reports. The activation energy related with the reaction rate constant of the process is calculated to increase from Cz-Si, to C-doped Cz-Si (CCz-Si), to Sn-doped Cz-Si contained C (SnCz-Si). This is attributed to the presence of the isovalent dopants that may impact both the kinetics of the oxygen atoms and also may lead to the formation of other oxygen-related clusters. Second, we studied the effect of Sn on the formation and evolution of carbon-oxygen (C-O) defects. It was determined that the presence of Sn suppresses the formation of the C-O defects as indicated by the reduction in the strength of the 683, 626, and 586 cm−1 well-known bands of CsOi defect. The phenomenon is attributed to the association of Sn with C atoms that may prevent the pairing of O with C. Third, we investigated the effect of C and Sn on the formation of thermal donors (TDs). Regarding carbon our results verified previous reports that carbon suppresses the formation of TDs. Interestingly, when both C and Sn are present in Si, very weak bands of TDs were observed, although it is known that Sn alone suppress their formation. This may be attributed to the competing strains of C and Sn in the Si lattice.

AB - Localized vibrational mode spectroscopy measurements on Czochralski silicon (Cz-Si) samples subjected to isothermal annealing at 450 °C are reported. First, we studied the effect of carbon (C) and tin (Sn) isovalent dopants on the aggregation kinetics of oxygen. It is determined that the reduction rate of oxygen is described by the Johnson-Mehl-Avrami equation in accordance with previous reports. The activation energy related with the reaction rate constant of the process is calculated to increase from Cz-Si, to C-doped Cz-Si (CCz-Si), to Sn-doped Cz-Si contained C (SnCz-Si). This is attributed to the presence of the isovalent dopants that may impact both the kinetics of the oxygen atoms and also may lead to the formation of other oxygen-related clusters. Second, we studied the effect of Sn on the formation and evolution of carbon-oxygen (C-O) defects. It was determined that the presence of Sn suppresses the formation of the C-O defects as indicated by the reduction in the strength of the 683, 626, and 586 cm−1 well-known bands of CsOi defect. The phenomenon is attributed to the association of Sn with C atoms that may prevent the pairing of O with C. Third, we investigated the effect of C and Sn on the formation of thermal donors (TDs). Regarding carbon our results verified previous reports that carbon suppresses the formation of TDs. Interestingly, when both C and Sn are present in Si, very weak bands of TDs were observed, although it is known that Sn alone suppress their formation. This may be attributed to the competing strains of C and Sn in the Si lattice.

KW - Activation energy

KW - Defects

KW - Doping (additives)

KW - Isothermal annealing

KW - Kinetics

KW - Oxygen

KW - Rate constants

KW - Silicon

KW - Aggregation kinetics

KW - Czochralski silicon

KW - Effect of carbons

KW - Formation and evolutions

KW - Johnson Mehl Avrami equation

KW - Reduction rate

KW - Spectroscopy measurements

KW - Vibrational modes

U2 - 10.1063/1.4923388

DO - 10.1063/1.4923388

M3 - Article

SN - 0021-8979

SN - 1089-7550

VL - 118

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

M1 - 4923388

ER -

Oxygen aggregation kinetics, thermal donors and carbon-oxygen defect formation in silicon containing carbon and tin

Abstract

Bibliographical note

Keywords

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