Oxidation of very low energy nitrogen-implanted strained-silicon

N. Kelaidis; D. Skarlatos; V. Ioannou-Sougleridis; C. Tsamis; Ph Komninou; B. Kellerman; M. Seacrist

doi:10.1016/j.mseb.2006.08.004

Oxidation of very low energy nitrogen-implanted strained-silicon

N. Kelaidis
, D. Skarlatos
, V. Ioannou-Sougleridis
, C. Tsamis
, Ph Komninou
, B. Kellerman
, M. Seacrist

National Centre of Scientific Research "Demokritos"
Aristotle University of Thessaloniki
MEMC Electronics Materials, Inc.

Research output: Contribution to journal › Article › peer-review

Abstract

In the present work we perform a systematic study of oxidation of very low energy nitrogen-implanted strained-silicon in terms of oxide growth, structural characterization of the implanted strained-silicon substrate and electrical properties of the ultra thin oxides as a function of the substrate strain level. Low energy (3 keV) nitrogen (N₂⁺) implantation was performed in strained-Si/SiGe/Si substrates of various strain levels and oxidations were carried out for different times at 850 °C. It has been found that nitrogen implantation efficiently blocks silicon oxidation, independently of the strain level of the substrate. TEM analysis revealed the full absence of extended defects in the strained-silicon substrate after the thermal treatments. The grown oxides exhibit very good electrical properties in terms of interface trap densities and leakage currents.

Original language	English
Pages (from-to)	199-202
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	135
Issue number	3
DOIs	https://doi.org/10.1016/j.mseb.2006.08.004
Publication status	Published - 15 Dec 2006
Externally published	Yes

Keywords

Electrical measurements
Ion implantation
Metal oxide semiconductor structures
Nitrogen
Oxidation
Strained-silicon

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.mseb.2006.08.004

Cite this

@article{65c4c2a830094afcaa8c6025db6f1b0f,

title = "Oxidation of very low energy nitrogen-implanted strained-silicon",

abstract = "In the present work we perform a systematic study of oxidation of very low energy nitrogen-implanted strained-silicon in terms of oxide growth, structural characterization of the implanted strained-silicon substrate and electrical properties of the ultra thin oxides as a function of the substrate strain level. Low energy (3 keV) nitrogen (N2+) implantation was performed in strained-Si/SiGe/Si substrates of various strain levels and oxidations were carried out for different times at 850 °C. It has been found that nitrogen implantation efficiently blocks silicon oxidation, independently of the strain level of the substrate. TEM analysis revealed the full absence of extended defects in the strained-silicon substrate after the thermal treatments. The grown oxides exhibit very good electrical properties in terms of interface trap densities and leakage currents.",

keywords = "Electrical measurements, Ion implantation, Metal oxide semiconductor structures, Nitrogen, Oxidation, Strained-silicon",

author = "N. Kelaidis and D. Skarlatos and V. Ioannou-Sougleridis and C. Tsamis and Ph Komninou and B. Kellerman and M. Seacrist",

year = "2006",

month = dec,

day = "15",

doi = "10.1016/j.mseb.2006.08.004",

language = "English",

volume = "135",

pages = "199--202",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier",

number = "3",

}

TY - JOUR

T1 - Oxidation of very low energy nitrogen-implanted strained-silicon

AU - Kelaidis, N.

AU - Skarlatos, D.

AU - Ioannou-Sougleridis, V.

AU - Tsamis, C.

AU - Komninou, Ph

AU - Kellerman, B.

AU - Seacrist, M.

PY - 2006/12/15

Y1 - 2006/12/15

N2 - In the present work we perform a systematic study of oxidation of very low energy nitrogen-implanted strained-silicon in terms of oxide growth, structural characterization of the implanted strained-silicon substrate and electrical properties of the ultra thin oxides as a function of the substrate strain level. Low energy (3 keV) nitrogen (N2+) implantation was performed in strained-Si/SiGe/Si substrates of various strain levels and oxidations were carried out for different times at 850 °C. It has been found that nitrogen implantation efficiently blocks silicon oxidation, independently of the strain level of the substrate. TEM analysis revealed the full absence of extended defects in the strained-silicon substrate after the thermal treatments. The grown oxides exhibit very good electrical properties in terms of interface trap densities and leakage currents.

AB - In the present work we perform a systematic study of oxidation of very low energy nitrogen-implanted strained-silicon in terms of oxide growth, structural characterization of the implanted strained-silicon substrate and electrical properties of the ultra thin oxides as a function of the substrate strain level. Low energy (3 keV) nitrogen (N2+) implantation was performed in strained-Si/SiGe/Si substrates of various strain levels and oxidations were carried out for different times at 850 °C. It has been found that nitrogen implantation efficiently blocks silicon oxidation, independently of the strain level of the substrate. TEM analysis revealed the full absence of extended defects in the strained-silicon substrate after the thermal treatments. The grown oxides exhibit very good electrical properties in terms of interface trap densities and leakage currents.

KW - Electrical measurements

KW - Ion implantation

KW - Metal oxide semiconductor structures

KW - Nitrogen

KW - Oxidation

KW - Strained-silicon

U2 - 10.1016/j.mseb.2006.08.004

DO - 10.1016/j.mseb.2006.08.004

M3 - Article

AN - SCOPUS:33751234256

SN - 0921-5107

VL - 135

SP - 199

EP - 202

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 3

ER -

Oxidation of very low energy nitrogen-implanted strained-silicon

Abstract

Keywords

ASJC Scopus subject areas

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