Oxidation of very low energy nitrogen-implanted strained-silicon

N. Kelaidis, D. Skarlatos, V. Ioannou-Sougleridis, C. Tsamis, Ph Komninou, B. Kellerman, M. Seacrist

Research output: Contribution to journalArticlepeer-review


In the present work we perform a systematic study of oxidation of very low energy nitrogen-implanted strained-silicon in terms of oxide growth, structural characterization of the implanted strained-silicon substrate and electrical properties of the ultra thin oxides as a function of the substrate strain level. Low energy (3 keV) nitrogen (N2+) implantation was performed in strained-Si/SiGe/Si substrates of various strain levels and oxidations were carried out for different times at 850 °C. It has been found that nitrogen implantation efficiently blocks silicon oxidation, independently of the strain level of the substrate. TEM analysis revealed the full absence of extended defects in the strained-silicon substrate after the thermal treatments. The grown oxides exhibit very good electrical properties in terms of interface trap densities and leakage currents.

Original languageEnglish
Pages (from-to)199-202
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Issue number3
Publication statusPublished - 15 Dec 2006
Externally publishedYes


  • Electrical measurements
  • Ion implantation
  • Metal oxide semiconductor structures
  • Nitrogen
  • Oxidation
  • Strained-silicon

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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