Optimization of Parameters influencing the Maximum Controllable Current in Gate Commutated Thyristors

N. Lophitis, M. Antoniou, F. Udrea, I. Nistor, M. Arnold, T. Wikström, J. Vobecky

Research output: Contribution to conferencePaper

Abstract

The model of interconnected numerical device segments can give a prediction on the dynamic performance of large area full wafer devices such as the GCTs and can be used as an optimization tool for designing GCTs. In this paper we evaluate the relative importance of the shallow p-base thickness, its peak concentration, the depth of the p-base and the buffer peak concentration.
Original languageEnglish
Number of pages6
Publication statusPublished - 2012
EventInternational Seminar on Power Semiconductors - Prague, Czech Republic
Duration: 29 Aug 201231 Aug 2012
Conference number: 11
http://technology.feld.cvut.cz:8080/xwiki/bin/view/ISPS2012/

Conference

ConferenceInternational Seminar on Power Semiconductors
Abbreviated titleISPS 2012
CountryCzech Republic
CityPrague
Period29/08/1231/08/12
Internet address

Keywords

  • Integrated Gate Commutated Thyristors
  • GCT
  • Optimization

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    Lophitis, N., Antoniou, M., Udrea, F., Nistor, I., Arnold, M., Wikström, T., & Vobecky, J. (2012). Optimization of Parameters influencing the Maximum Controllable Current in Gate Commutated Thyristors. Paper presented at International Seminar on Power Semiconductors, Prague, Czech Republic.