The model of interconnected numerical device segments can give a prediction on the dynamic performance of large area full wafer devices such as the GCTs and can be used as an optimization tool for designing GCTs. In this paper we evaluate the relative importance of the shallow p-base thickness, its peak concentration, the depth of the p-base and the buffer peak concentration.
|Number of pages||6|
|Publication status||Published - 2012|
|Event||International Seminar on Power Semiconductors - Prague, Czech Republic|
Duration: 29 Aug 2012 → 31 Aug 2012
Conference number: 11
|Conference||International Seminar on Power Semiconductors|
|Abbreviated title||ISPS 2012|
|Period||29/08/12 → 31/08/12|
- Integrated Gate Commutated Thyristors
Lophitis, N., Antoniou, M., Udrea, F., Nistor, I., Arnold, M., Wikström, T., & Vobecky, J. (2012). Optimization of Parameters influencing the Maximum Controllable Current in Gate Commutated Thyristors. Paper presented at International Seminar on Power Semiconductors, Prague, Czech Republic.