Optimal Gate Commutated Thyristor Design for Bi-mode Gate Commutated Thyristors Underpinning High, Temperature Independent, Current Controllability

Neophytos Lophitis; Marina Antoniou; Umamaheswara Reddy Vemulapati; Jan Vobecky; Uwe Badstuebner; Tobias Wikstrom; Thomas Stiasny; Munaf T. Rahimo; Florin Udrea

doi:10.1109/LED.2018.2847050

Optimal Gate Commutated Thyristor Design for Bi-mode Gate Commutated Thyristors Underpinning High, Temperature Independent, Current Controllability

Neophytos Lophitis, Marina Antoniou, Umamaheswara Reddy Vemulapati, Jan Vobecky, Uwe Badstuebner, Tobias Wikstrom, Thomas Stiasny, Munaf T. Rahimo, Florin Udrea

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Abstract

The Bi-mode Gate Commutated Thyristor (BGCT) is an advanced reverse conducting device aiming high power applications. Due to the high degree of interdigitation of diode parts and Gate Commutated Thyristor (GCT) parts, it is necessary to investigate how to best separate the two and at the same time, how to maximise the individual power handling capability. This work underpins the latter, for the GCT part. In achieving that, this letter details the optimisation direction, identifies the design parameters that influence the Maximum Controllable Current (MCC) and thereafter introduces a new design attribute, the “pzone”. This new design not only improves the MCC at high temperature, but also at low temperature, yielding temperature independent current handling capability and at least 1000 A, or 23.5 % of improvement compared to the state-of-the-art. As a result, the proposed design constitutes an enabler for optimally designed bi-mode devices rated at least 5000 A for applications with the highest power requirement.

Original language	English
Pages (from-to)	1342-1345
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	39
Issue number	9
Early online date	13 Jun 2018
DOIs	https://doi.org/10.1109/LED.2018.2847050
Publication status	Published - Sept 2018

Bibliographical note

© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Keywords

Full Wafer Modelling
MCC
Maximum Controllable Current
Gate Commutated Thyristor
Reverse Conducting
Anodes
Failure analysis
Current density
Thyristors
Logic gates
Junctions
Cathodes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2018.2847050

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Lophitis, N., Antoniou, M., Vemulapati, U. R., Vobecky, J., Badstuebner, U., Wikstrom, T., Stiasny, T., Rahimo, M. T., & Udrea, F. (2018). Optimal Gate Commutated Thyristor Design for Bi-mode Gate Commutated Thyristors Underpinning High, Temperature Independent, Current Controllability. IEEE Electron Device Letters, 39(9), 1342-1345. https://doi.org/10.1109/LED.2018.2847050

Lophitis, N, Antoniou, M, Vemulapati, UR, Vobecky, J, Badstuebner, U, Wikstrom, T, Stiasny, T, Rahimo, MT & Udrea, F 2018, 'Optimal Gate Commutated Thyristor Design for Bi-mode Gate Commutated Thyristors Underpinning High, Temperature Independent, Current Controllability', IEEE Electron Device Letters, vol. 39, no. 9, pp. 1342-1345. https://doi.org/10.1109/LED.2018.2847050

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abstract = "The Bi-mode Gate Commutated Thyristor (BGCT) is an advanced reverse conducting device aiming high power applications. Due to the high degree of interdigitation of diode parts and Gate Commutated Thyristor (GCT) parts, it is necessary to investigate how to best separate the two and at the same time, how to maximise the individual power handling capability. This work underpins the latter, for the GCT part. In achieving that, this letter details the optimisation direction, identifies the design parameters that influence the Maximum Controllable Current (MCC) and thereafter introduces a new design attribute, the “pzone”. This new design not only improves the MCC at high temperature, but also at low temperature, yielding temperature independent current handling capability and at least 1000 A, or 23.5 % of improvement compared to the state-of-the-art. As a result, the proposed design constitutes an enabler for optimally designed bi-mode devices rated at least 5000 A for applications with the highest power requirement.",

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Optimal Gate Commutated Thyristor Design for Bi-mode Gate Commutated Thyristors Underpinning High, Temperature Independent, Current Controllability

Abstract

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Keywords

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