Optimal Gate Commutated Thyristor Design for Bi-mode Gate Commutated Thyristors Underpinning High, Temperature Independent, Current Controllability

Neophytos Lophitis, Marina Antoniou, Umamaheswara Reddy Vemulapati, Jan Vobecky, Uwe Badstuebner, Tobias Wikstrom, Thomas Stiasny, Munaf T. Rahimo, Florin Udrea

Research output: Contribution to journalArticle

Abstract

The Bi-mode Gate Commutated Thyristor (BGCT) is an advanced reverse conducting device aiming high power applications. Due to the high degree of interdigitation of diode parts and Gate Commutated Thyristor (GCT) parts, it is necessary to investigate how to best separate the two and at the same time, how to maximise the individual power handling capability. This work underpins the latter, for the GCT part. In achieving that, this letter details the optimisation direction, identifies the design parameters that influence the Maximum Controllable Current (MCC) and thereafter introduces a new design attribute, the “pzone”. This new design not only improves the MCC at high temperature, but also at low temperature, yielding temperature independent current handling capability and at least 1000 A, or 23.5 % of improvement compared to the state-of-the-art. As a result, the proposed design constitutes an enabler for optimally designed bi-mode devices rated at least 5000 A for applications with the highest power requirement.
LanguageEnglish
Pages1342-1345
Number of pages4
JournalIEEE Electron Device Letters
Volume39
Issue number9
Early online date13 Jun 2018
DOIs
StatePublished - Sep 2018

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Controllability
Thyristors
Temperature
Diodes

Bibliographical note

© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Keywords

  • Full Wafer Modelling
  • MCC
  • Maximum Controllable Current
  • Gate Commutated Thyristor
  • Reverse Conducting
  • Anodes
  • Failure analysis
  • Current density
  • Thyristors
  • Logic gates
  • Junctions
  • Cathodes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Optimal Gate Commutated Thyristor Design for Bi-mode Gate Commutated Thyristors Underpinning High, Temperature Independent, Current Controllability. / Lophitis, Neophytos; Antoniou, Marina; Vemulapati, Umamaheswara Reddy; Vobecky, Jan; Badstuebner, Uwe; Wikstrom, Tobias; Stiasny, Thomas; Rahimo, Munaf T.; Udrea, Florin.

In: IEEE Electron Device Letters, Vol. 39, No. 9, 09.2018, p. 1342-1345.

Research output: Contribution to journalArticle

Lophitis, N, Antoniou, M, Vemulapati, UR, Vobecky, J, Badstuebner, U, Wikstrom, T, Stiasny, T, Rahimo, MT & Udrea, F 2018, 'Optimal Gate Commutated Thyristor Design for Bi-mode Gate Commutated Thyristors Underpinning High, Temperature Independent, Current Controllability' IEEE Electron Device Letters, vol. 39, no. 9, pp. 1342-1345. DOI: 10.1109/LED.2018.2847050
Lophitis, Neophytos ; Antoniou, Marina ; Vemulapati, Umamaheswara Reddy ; Vobecky, Jan ; Badstuebner, Uwe ; Wikstrom, Tobias ; Stiasny, Thomas ; Rahimo, Munaf T. ; Udrea, Florin. / Optimal Gate Commutated Thyristor Design for Bi-mode Gate Commutated Thyristors Underpinning High, Temperature Independent, Current Controllability. In: IEEE Electron Device Letters. 2018 ; Vol. 39, No. 9. pp. 1342-1345
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