The Bi-mode Gate Commutated Thyristor (BGCT) is an advanced reverse conducting device aiming high power applications. Due to the high degree of interdigitation of diode parts and Gate Commutated Thyristor (GCT) parts, it is necessary to investigate how to best separate the two and at the same time, how to maximise the individual power handling capability. This work underpins the latter, for the GCT part. In achieving that, this letter details the optimisation direction, identifies the design parameters that influence the Maximum Controllable Current (MCC) and thereafter introduces a new design attribute, the “pzone”. This new design not only improves the MCC at high temperature, but also at low temperature, yielding temperature independent current handling capability and at least 1000 A, or 23.5 % of improvement compared to the state-of-the-art. As a result, the proposed design constitutes an enabler for optimally designed bi-mode devices rated at least 5000 A for applications with the highest power requirement.
Bibliographical note© 2018 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
- Full Wafer Modelling
- Maximum Controllable Current
- Gate Commutated Thyristor
- Reverse Conducting
- Failure analysis
- Current density
- Logic gates
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Lophitis, N., Antoniou, M., Vemulapati, U. R., Vobecky, J., Badstuebner, U., Wikstrom, T., ... Udrea, F. (2018). Optimal Gate Commutated Thyristor Design for Bi-mode Gate Commutated Thyristors Underpinning High, Temperature Independent, Current Controllability. IEEE Electron Device Letters, 39(9), 1342-1345. https://doi.org/10.1109/LED.2018.2847050