Optimal edge termination for high oxide reliability aiming 10kV SiC n-IGBTs

M. Antoniou, S. Perkins, A. K. Tiwari, A. Arvanitopoulos, K. N. Gyftakis, Tanya Trajkovic, F Udrea, N Lophitis

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

Abstract

The edge termination design strongly affects the ability of a power device to support the desired voltage and its reliable operation. In this paper we present three appropriate termination designs for 10kV n-IGBTs which achieve the
desired blocking requirement without the need for deep and expensive implantations. Thus, they improve the ability to fabricate, minimise the cost and reduce the lattice damage due to the high implantation energy. The edge terminations presented are optimised both for achieving the widest immunity
to dopant activation and to minimise the electric field at the oxide. Thus, they ensure the long-term reliability of the device. This work has shown that the optimum design for blocking voltage and widest dose window does not necessarily give the best design for reliability. Further, it has been shown that
Hybrid Junction Termination Extension structure with Space Modulated Floating Field Rings can give the best result of very high termination efficiency, as high as 99%, the widest doping variation immunity and the lowest electric field in the oxide.
Original languageEnglish
Title of host publicationProceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2019
PublisherIEEE
Pages358-363
Number of pages6
Volume(In-Press)
ISBN (Electronic)9781728118321
ISBN (Print)978-1-7281-1832-1, 978-1-7281-1833-8
DOIs
Publication statusE-pub ahead of print - 14 Oct 2019
EventIEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives: SDEMPED - http://www.sdemped2019.com/en/index.html, Toulouse, France
Duration: 27 Aug 201930 Aug 2019
http://www.sdemped2019.com/

Conference

ConferenceIEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives
Abbreviated titleSDEMPED
CountryFrance
CityToulouse
Period27/08/1930/08/19
Internet address

Fingerprint

Insulated gate bipolar transistors (IGBT)
Oxides
Electric fields
Doping (additives)
Electric potential
Chemical activation
Costs

Bibliographical note

© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.

Keywords

  • IGBT
  • Oxide
  • Performance
  • Reliability
  • Silicon Carbide
  • Termination
  • UHV

ASJC Scopus subject areas

  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Safety, Risk, Reliability and Quality

Cite this

Antoniou, M., Perkins, S., Tiwari, A. K., Arvanitopoulos, A., Gyftakis, K. N., Trajkovic, T., ... Lophitis, N. (2019). Optimal edge termination for high oxide reliability aiming 10kV SiC n-IGBTs. In Proceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2019 (Vol. (In-Press), pp. 358-363). [8864919] IEEE. https://doi.org/10.1109/DEMPED.2019.8864919

Optimal edge termination for high oxide reliability aiming 10kV SiC n-IGBTs. / Antoniou, M.; Perkins, S.; Tiwari, A. K.; Arvanitopoulos, A.; Gyftakis, K. N.; Trajkovic, Tanya; Udrea, F; Lophitis, N.

Proceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2019. Vol. (In-Press) IEEE, 2019. p. 358-363 8864919.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

Antoniou, M, Perkins, S, Tiwari, AK, Arvanitopoulos, A, Gyftakis, KN, Trajkovic, T, Udrea, F & Lophitis, N 2019, Optimal edge termination for high oxide reliability aiming 10kV SiC n-IGBTs. in Proceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2019. vol. (In-Press), 8864919, IEEE, pp. 358-363, IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, Toulouse, France, 27/08/19. https://doi.org/10.1109/DEMPED.2019.8864919
Antoniou M, Perkins S, Tiwari AK, Arvanitopoulos A, Gyftakis KN, Trajkovic T et al. Optimal edge termination for high oxide reliability aiming 10kV SiC n-IGBTs. In Proceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2019. Vol. (In-Press). IEEE. 2019. p. 358-363. 8864919 https://doi.org/10.1109/DEMPED.2019.8864919
Antoniou, M. ; Perkins, S. ; Tiwari, A. K. ; Arvanitopoulos, A. ; Gyftakis, K. N. ; Trajkovic, Tanya ; Udrea, F ; Lophitis, N. / Optimal edge termination for high oxide reliability aiming 10kV SiC n-IGBTs. Proceedings of the 2019 IEEE 12th International Symposium on Diagnostics for Electrical Machines, Power Electronics and Drives, SDEMPED 2019. Vol. (In-Press) IEEE, 2019. pp. 358-363
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