Operation of Ultra-High Voltage (>10kV) SiC IGBTs at Elevated Temperatures: Benefits & Constraints

Amit K. Tiwari, Florin Udrea, Neophytos Lophitis, Marina Antoniou

    Research output: Chapter in Book/Report/Conference proceedingConference proceedingpeer-review

    10 Citations (Scopus)
    56 Downloads (Pure)

    Abstract

    State of the art TCAD simulation models are used to simulate the performance of ultra-high voltage (10-20 kV) SiC IGBTs in the temperature range 300-775 K. We show that unlike Si-based counterparts, ultra-high voltage SiC IGBTs stand to gain from the temperature rise if the limit is not exceeded. We show that whilst an operation at 375 K is highly promising to achieve the most optimum on-state characteristics from SiC IGBTs, no significant degradation in the on-state current and breakdown voltage alongside with negligible rise in leakage current is observed until 550 K. Therefore, ≥10 kV SiC IGBTs are highly promising for Smart Grid and HVDC.
    Original languageEnglish
    Title of host publication2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD
    PublisherIEEE
    Pages175-178
    Number of pages4
    ISBN (Electronic)978-1-7281-0581-9
    ISBN (Print)978-1-7281-0580-2
    DOIs
    Publication statusPublished - 11 Jul 2019
    EventThe 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai Marriott Hotel Parkview, Shanghai, China
    Duration: 19 May 201923 May 2019
    Conference number: 31st
    http://www.ispsd2019.com/

    Publication series

    NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
    Volume2019-May
    ISSN (Print)1063-6854
    ISSN (Electronic)1946-0201

    Conference

    ConferenceThe 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)
    Abbreviated titleISPSD
    Country/TerritoryChina
    CityShanghai
    Period19/05/1923/05/19
    Internet address

    Bibliographical note

    Copyright © and Moral Rights are retained by the author(s) and/ or other copyright owners. A copy can be downloaded for personal non-commercial research or study, without prior permission or charge. This item cannot be reproduced or quoted extensively from without first obtaining permission in writing from the copyright holder(s). The content must not be changed in any way or sold commercially in any format or medium without the formal permission of the copyright holders.

    Keywords

    • Elevated Temperatures
    • HVDC and Smart Grid
    • SiC IGBT
    • Ultra-high voltage

    ASJC Scopus subject areas

    • Engineering(all)

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