Operation of Ultra-High Voltage (>10kV) SiC IGBTs at Elevated Temperatures: Benefits & Constraints

Amit K. Tiwari, Florin Udrea, Neophytos Lophitis, Marina Antoniou

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

1 Citation (Scopus)
5 Downloads (Pure)

Abstract

State of the art TCAD simulation models are used to simulate the performance of ultra-high voltage (10-20 kV) SiC IGBTs in the temperature range 300-775 K. We show that unlike Si-based counterparts, ultra-high voltage SiC IGBTs stand to gain from the temperature rise if the limit is not exceeded. We show that whilst an operation at 375 K is highly promising to achieve the most optimum on-state characteristics from SiC IGBTs, no significant degradation in the on-state current and breakdown voltage alongside with negligible rise in leakage current is observed until 550 K. Therefore, ≥10 kV SiC IGBTs are highly promising for Smart Grid and HVDC.
Original languageEnglish
Title of host publication2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD
PublisherIEEE
Pages175-178
Number of pages4
ISBN (Electronic)978-1-7281-0581-9
ISBN (Print)978-1-7281-0580-2
DOIs
Publication statusPublished - 11 Jul 2019
EventThe 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai Marriott Hotel Parkview, Shanghai, China
Duration: 19 May 201923 May 2019
Conference number: 31st
http://www.ispsd2019.com/

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume2019-May
ISSN (Print)1063-6854
ISSN (Electronic)1946-0201

Conference

ConferenceThe 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Abbreviated titleISPSD
CountryChina
CityShanghai
Period19/05/1923/05/19
Internet address

Fingerprint

Insulated gate bipolar transistors (IGBT)
Electric potential
Temperature
Electric breakdown
Leakage currents
Degradation

Bibliographical note

Copyright © and Moral Rights are retained by the author(s) and/ or other copyright owners. A copy can be downloaded for personal non-commercial research or study, without prior permission or charge. This item cannot be reproduced or quoted extensively from without first obtaining permission in writing from the copyright holder(s). The content must not be changed in any way or sold commercially in any format or medium without the formal permission of the copyright holders.

Keywords

  • Elevated Temperatures
  • HVDC and Smart Grid
  • SiC IGBT
  • Ultra-high voltage

ASJC Scopus subject areas

  • Engineering(all)

Cite this

K. Tiwari, A., Udrea, F., Lophitis, N., & Antoniou, M. (2019). Operation of Ultra-High Voltage (>10kV) SiC IGBTs at Elevated Temperatures: Benefits & Constraints. In 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD (pp. 175-178). [8757586] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2019-May). IEEE. https://doi.org/10.1109/ISPSD.2019.8757586

Operation of Ultra-High Voltage (>10kV) SiC IGBTs at Elevated Temperatures : Benefits & Constraints. / K. Tiwari, Amit; Udrea, Florin; Lophitis, Neophytos; Antoniou, Marina.

2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD . IEEE, 2019. p. 175-178 8757586 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2019-May).

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

K. Tiwari, A, Udrea, F, Lophitis, N & Antoniou, M 2019, Operation of Ultra-High Voltage (>10kV) SiC IGBTs at Elevated Temperatures: Benefits & Constraints. in 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD ., 8757586, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, vol. 2019-May, IEEE, pp. 175-178, The 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) , Shanghai, China, 19/05/19. https://doi.org/10.1109/ISPSD.2019.8757586
K. Tiwari A, Udrea F, Lophitis N, Antoniou M. Operation of Ultra-High Voltage (>10kV) SiC IGBTs at Elevated Temperatures: Benefits & Constraints. In 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD . IEEE. 2019. p. 175-178. 8757586. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). https://doi.org/10.1109/ISPSD.2019.8757586
K. Tiwari, Amit ; Udrea, Florin ; Lophitis, Neophytos ; Antoniou, Marina. / Operation of Ultra-High Voltage (>10kV) SiC IGBTs at Elevated Temperatures : Benefits & Constraints. 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD . IEEE, 2019. pp. 175-178 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).
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