State of the art TCAD simulation models are used to simulate the performance of ultra-high voltage (10-20 kV) SiC IGBTs in the temperature range 300-775 K. We show that unlike Si-based counterparts, ultra-high voltage SiC IGBTs stand to gain from the temperature rise if the limit is not exceeded. We show that whilst an operation at 375 K is highly promising to achieve the most optimum on-state characteristics from SiC IGBTs, no significant degradation in the on-state current and breakdown voltage alongside with negligible rise in leakage current is observed until 550 K. Therefore, ≥10 kV SiC IGBTs are highly promising for Smart Grid and HVDC.
|Title of host publication||2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD|
|Number of pages||4|
|Publication status||Published - 11 Jul 2019|
|Event||The 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai Marriott Hotel Parkview, Shanghai, China|
Duration: 19 May 2019 → 23 May 2019
Conference number: 31st
|Name||Proceedings of the International Symposium on Power Semiconductor Devices and ICs|
|Conference||The 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)|
|Period||19/05/19 → 23/05/19|
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- Elevated Temperatures
- HVDC and Smart Grid
- SiC IGBT
- Ultra-high voltage
ASJC Scopus subject areas