Operation of Ultra-High Voltage (>10kV) SiC IGBTs at Elevated Temperatures: Benefits & Constraints

Amit K. Tiwari; Florin Udrea; Neophytos Lophitis; Marina Antoniou

doi:10.1109/ISPSD.2019.8757586

Operation of Ultra-High Voltage (>10kV) SiC IGBTs at Elevated Temperatures: Benefits & Constraints

Amit K. Tiwari, Florin Udrea, Neophytos Lophitis, Marina Antoniou

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

11 Citations (Scopus)

105 Downloads (Pure)

Abstract

State of the art TCAD simulation models are used to simulate the performance of ultra-high voltage (10-20 kV) SiC IGBTs in the temperature range 300-775 K. We show that unlike Si-based counterparts, ultra-high voltage SiC IGBTs stand to gain from the temperature rise if the limit is not exceeded. We show that whilst an operation at 375 K is highly promising to achieve the most optimum on-state characteristics from SiC IGBTs, no significant degradation in the on-state current and breakdown voltage alongside with negligible rise in leakage current is observed until 550 K. Therefore, ≥10 kV SiC IGBTs are highly promising for Smart Grid and HVDC.

Original language	English
Title of host publication	2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD
Publisher	IEEE
Pages	175-178
Number of pages	4
ISBN (Electronic)	978-1-7281-0581-9
ISBN (Print)	978-1-7281-0580-2
DOIs	https://doi.org/10.1109/ISPSD.2019.8757586
Publication status	Published - 11 Jul 2019
Event	The 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai Marriott Hotel Parkview, Shanghai, China Duration: 19 May 2019 → 23 May 2019 Conference number: 31st http://www.ispsd2019.com/

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume	2019-May
ISSN (Print)	1063-6854
ISSN (Electronic)	1946-0201

Conference

Conference	The 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Abbreviated title	ISPSD
Country/Territory	China
City	Shanghai
Period	19/05/19 → 23/05/19
Internet address	http://www.ispsd2019.com/

Bibliographical note

Copyright © and Moral Rights are retained by the author(s) and/ or other copyright owners. A copy can be downloaded for personal non-commercial research or study, without prior permission or charge. This item cannot be reproduced or quoted extensively from without first obtaining permission in writing from the copyright holder(s). The content must not be changed in any way or sold commercially in any format or medium without the formal permission of the copyright holders.

Keywords

Elevated Temperatures
HVDC and Smart Grid
SiC IGBT
Ultra-high voltage

ASJC Scopus subject areas

General Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/ISPSD.2019.8757586

Post-PrintAccepted author manuscript, 880 KBLicence: Unspecified

Cite this

K. Tiwari, A., Udrea, F., Lophitis, N., & Antoniou, M. (2019). Operation of Ultra-High Voltage (>10kV) SiC IGBTs at Elevated Temperatures: Benefits & Constraints. In 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD (pp. 175-178). Article 8757586 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2019-May). IEEE. https://doi.org/10.1109/ISPSD.2019.8757586

Operation of Ultra-High Voltage (>10kV) SiC IGBTs at Elevated Temperatures: Benefits & Constraints. / K. Tiwari, Amit; Udrea, Florin; Lophitis, Neophytos et al.
2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD . IEEE, 2019. p. 175-178 8757586 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2019-May).

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

K. Tiwari, A, Udrea, F, Lophitis, N & Antoniou, M 2019, Operation of Ultra-High Voltage (>10kV) SiC IGBTs at Elevated Temperatures: Benefits & Constraints. in 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD ., 8757586, Proceedings of the International Symposium on Power Semiconductor Devices and ICs, vol. 2019-May, IEEE, pp. 175-178, The 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) , Shanghai, China, 19/05/19. https://doi.org/10.1109/ISPSD.2019.8757586

K. Tiwari A, Udrea F, Lophitis N, Antoniou M. Operation of Ultra-High Voltage (>10kV) SiC IGBTs at Elevated Temperatures: Benefits & Constraints. In 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD . IEEE. 2019. p. 175-178. 8757586. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.1109/ISPSD.2019.8757586

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abstract = "State of the art TCAD simulation models are used to simulate the performance of ultra-high voltage (10-20 kV) SiC IGBTs in the temperature range 300-775 K. We show that unlike Si-based counterparts, ultra-high voltage SiC IGBTs stand to gain from the temperature rise if the limit is not exceeded. We show that whilst an operation at 375 K is highly promising to achieve the most optimum on-state characteristics from SiC IGBTs, no significant degradation in the on-state current and breakdown voltage alongside with negligible rise in leakage current is observed until 550 K. Therefore, ≥10 kV SiC IGBTs are highly promising for Smart Grid and HVDC.",

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Operation of Ultra-High Voltage (>10kV) SiC IGBTs at Elevated Temperatures: Benefits & Constraints

Abstract

Publication series

Conference

Bibliographical note

Keywords

ASJC Scopus subject areas

UN SDGs

Access to Document

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