Abstract
State of the art TCAD simulation models are used to simulate the performance of ultra-high voltage (10-20 kV) SiC IGBTs in the temperature range 300-775 K. We show that unlike Si-based counterparts, ultra-high voltage SiC IGBTs stand to gain from the temperature rise if the limit is not exceeded. We show that whilst an operation at 375 K is highly promising to achieve the most optimum on-state characteristics from SiC IGBTs, no significant degradation in the on-state current and breakdown voltage alongside with negligible rise in leakage current is observed until 550 K. Therefore, ≥10 kV SiC IGBTs are highly promising for Smart Grid and HVDC.
Original language | English |
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Title of host publication | 2019 31st International Symposium on Power Semiconductor Devices and ICs, ISPSD |
Publisher | IEEE |
Pages | 175-178 |
Number of pages | 4 |
ISBN (Electronic) | 978-1-7281-0581-9 |
ISBN (Print) | 978-1-7281-0580-2 |
DOIs | |
Publication status | Published - 11 Jul 2019 |
Event | The 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai Marriott Hotel Parkview, Shanghai, China Duration: 19 May 2019 → 23 May 2019 Conference number: 31st http://www.ispsd2019.com/ |
Publication series
Name | Proceedings of the International Symposium on Power Semiconductor Devices and ICs |
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Volume | 2019-May |
ISSN (Print) | 1063-6854 |
ISSN (Electronic) | 1946-0201 |
Conference
Conference | The 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) |
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Abbreviated title | ISPSD |
Country/Territory | China |
City | Shanghai |
Period | 19/05/19 → 23/05/19 |
Internet address |
Bibliographical note
Copyright © and Moral Rights are retained by the author(s) and/ or other copyright owners. A copy can be downloaded for personal non-commercial research or study, without prior permission or charge. This item cannot be reproduced or quoted extensively from without first obtaining permission in writing from the copyright holder(s). The content must not be changed in any way or sold commercially in any format or medium without the formal permission of the copyright holders.Keywords
- Elevated Temperatures
- HVDC and Smart Grid
- SiC IGBT
- Ultra-high voltage
ASJC Scopus subject areas
- General Engineering