On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures

Samuel Perkins, Anastasios Arvanitopoulos, Konstantinos N. Gyftakis, Neo Lophitis

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

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Abstract

This work provides an experimentally driven comparison between commercialized Gallium Nitride on Silicon (GaN-on-Si) and Silicon (Si) Super Junction (S-J) power devices at elevated temperatures. Elevated temperature experiments were performed to analyze the static performance of the Panasonic PGA26C09DV Enhancement (E-mode) p-GaN layer Gate Injected Transistor (GIT), the Transphorm TPH3206LD, TPH3206PD cascode GaN High Electron Mobility Transistors (HEMTs) and the Infineon SPA15N60C3 Silicon S-J. The Device Under Tests (DUTs) were characterized in a thermal chamber using the B1505A Power Device Analyzer. The elevated temperature measurements were taken; analyzed and compared. The performance of the GaN-on-Si indicated a strong robustness in thermally challenging environments and demonstrated superior performances at higher temperatures in comparison to traditional Si S-J technology.

Original languageEnglish
Title of host publication2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018
PublisherIEEE
Pages174-178
Number of pages5
ISBN (Electronic)978-1-5386-4392-1
ISBN (Print)978-1-5386-4393-8
DOIs
Publication statusPublished - 13 Jun 2019
Event2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) - Xi'an, China
Duration: 16 May 201818 May 2018
Conference number: 1
http://www.wipda-asia.org/index.html

Conference

Conference2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
Abbreviated titleWiPDA Asia
CountryChina
CityXi'an
Period16/05/1818/05/18
Internet address

Fingerprint

Gallium nitride
Nitrides
Silicon
Temperature
Temperature Measurement
High electron mobility transistors
Temperature measurement
Transistors
Enhancement
gallium nitride
Electron
Robustness
Experiment
Experiments

Keywords

  • B1505A
  • E-mode
  • GaN HEMT
  • cascode GaN
  • high temperature
  • power devices
  • static performance

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Optimization
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

Cite this

Perkins, S., Arvanitopoulos, A., Gyftakis, K. N., & Lophitis, N. (2019). On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures. In 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018 (pp. 174-178). [8734593] IEEE. https://doi.org/10.1109/WiPDAAsia.2018.8734593

On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures. / Perkins, Samuel; Arvanitopoulos, Anastasios; Gyftakis, Konstantinos N.; Lophitis, Neo.

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018. IEEE, 2019. p. 174-178 8734593.

Research output: Chapter in Book/Report/Conference proceedingConference proceeding

Perkins, S, Arvanitopoulos, A, Gyftakis, KN & Lophitis, N 2019, On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures. in 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018., 8734593, IEEE, pp. 174-178, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), Xi'an, China, 16/05/18. https://doi.org/10.1109/WiPDAAsia.2018.8734593
Perkins S, Arvanitopoulos A, Gyftakis KN, Lophitis N. On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures. In 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018. IEEE. 2019. p. 174-178. 8734593 https://doi.org/10.1109/WiPDAAsia.2018.8734593
Perkins, Samuel ; Arvanitopoulos, Anastasios ; Gyftakis, Konstantinos N. ; Lophitis, Neo. / On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures. 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018. IEEE, 2019. pp. 174-178
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