On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures

Samuel Perkins; Anastasios Arvanitopoulos; Konstantinos N. Gyftakis; Neo Lophitis

doi:10.1109/WiPDAAsia.2018.8734593

On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures

Samuel Perkins, Anastasios Arvanitopoulos, Konstantinos N. Gyftakis, Neo Lophitis

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

3 Citations (Scopus)

57 Downloads (Pure)

Abstract

This work provides an experimentally driven comparison between commercialized Gallium Nitride on Silicon (GaN-on-Si) and Silicon (Si) Super Junction (S-J) power devices at elevated temperatures. Elevated temperature experiments were performed to analyze the static performance of the Panasonic PGA26C09DV Enhancement (E-mode) p-GaN layer Gate Injected Transistor (GIT), the Transphorm TPH3206LD, TPH3206PD cascode GaN High Electron Mobility Transistors (HEMTs) and the Infineon SPA15N60C3 Silicon S-J. The Device Under Tests (DUTs) were characterized in a thermal chamber using the B1505A Power Device Analyzer. The elevated temperature measurements were taken; analyzed and compared. The performance of the GaN-on-Si indicated a strong robustness in thermally challenging environments and demonstrated superior performances at higher temperatures in comparison to traditional Si S-J technology.

Original language	English
Title of host publication	2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018
Publisher	IEEE
Pages	174-178
Number of pages	5
ISBN (Electronic)	978-1-5386-4392-1
ISBN (Print)	978-1-5386-4393-8
DOIs	https://doi.org/10.1109/WiPDAAsia.2018.8734593
Publication status	Published - 13 Jun 2019
Event	2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) - Xi'an, China Duration: 16 May 2018 → 18 May 2018 Conference number: 1 http://www.wipda-asia.org/index.html

Conference

Conference	2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
Abbreviated title	WiPDA Asia
Country/Territory	China
City	Xi'an
Period	16/05/18 → 18/05/18
Internet address	http://www.wipda-asia.org/index.html

Keywords

B1505A
E-mode
GaN HEMT
cascode GaN
high temperature
power devices
static performance

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Control and Optimization
Energy Engineering and Power Technology
Electrical and Electronic Engineering

Access to Document

10.1109/WiPDAAsia.2018.8734593

Post-PrintAccepted author manuscript, 1.15 MBLicence: Unspecified

Cite this

On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures. / Perkins, Samuel; Arvanitopoulos, Anastasios; Gyftakis, Konstantinos N. et al.
2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018. IEEE, 2019. p. 174-178 8734593.

Research output: Chapter in Book/Report/Conference proceeding › Conference proceeding › peer-review

Perkins, S, Arvanitopoulos, A, Gyftakis, KN & Lophitis, N 2019, On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures. in 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018., 8734593, IEEE, pp. 174-178, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), Xi'an, China, 16/05/18. https://doi.org/10.1109/WiPDAAsia.2018.8734593

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abstract = "This work provides an experimentally driven comparison between commercialized Gallium Nitride on Silicon (GaN-on-Si) and Silicon (Si) Super Junction (S-J) power devices at elevated temperatures. Elevated temperature experiments were performed to analyze the static performance of the Panasonic PGA26C09DV Enhancement (E-mode) p-GaN layer Gate Injected Transistor (GIT), the Transphorm TPH3206LD, TPH3206PD cascode GaN High Electron Mobility Transistors (HEMTs) and the Infineon SPA15N60C3 Silicon S-J. The Device Under Tests (DUTs) were characterized in a thermal chamber using the B1505A Power Device Analyzer. The elevated temperature measurements were taken; analyzed and compared. The performance of the GaN-on-Si indicated a strong robustness in thermally challenging environments and demonstrated superior performances at higher temperatures in comparison to traditional Si S-J technology.",

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author = "Samuel Perkins and Anastasios Arvanitopoulos and Gyftakis, {Konstantinos N.} and Neo Lophitis",

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N2 - This work provides an experimentally driven comparison between commercialized Gallium Nitride on Silicon (GaN-on-Si) and Silicon (Si) Super Junction (S-J) power devices at elevated temperatures. Elevated temperature experiments were performed to analyze the static performance of the Panasonic PGA26C09DV Enhancement (E-mode) p-GaN layer Gate Injected Transistor (GIT), the Transphorm TPH3206LD, TPH3206PD cascode GaN High Electron Mobility Transistors (HEMTs) and the Infineon SPA15N60C3 Silicon S-J. The Device Under Tests (DUTs) were characterized in a thermal chamber using the B1505A Power Device Analyzer. The elevated temperature measurements were taken; analyzed and compared. The performance of the GaN-on-Si indicated a strong robustness in thermally challenging environments and demonstrated superior performances at higher temperatures in comparison to traditional Si S-J technology.

AB - This work provides an experimentally driven comparison between commercialized Gallium Nitride on Silicon (GaN-on-Si) and Silicon (Si) Super Junction (S-J) power devices at elevated temperatures. Elevated temperature experiments were performed to analyze the static performance of the Panasonic PGA26C09DV Enhancement (E-mode) p-GaN layer Gate Injected Transistor (GIT), the Transphorm TPH3206LD, TPH3206PD cascode GaN High Electron Mobility Transistors (HEMTs) and the Infineon SPA15N60C3 Silicon S-J. The Device Under Tests (DUTs) were characterized in a thermal chamber using the B1505A Power Device Analyzer. The elevated temperature measurements were taken; analyzed and compared. The performance of the GaN-on-Si indicated a strong robustness in thermally challenging environments and demonstrated superior performances at higher temperatures in comparison to traditional Si S-J technology.

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KW - cascode GaN

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ER -

On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures

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Keywords

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